公开(公告)号：US20240425250A1

公开(公告)日：2024-12-26

申请号：US18692322

申请日：2022-09-15

Applicant: Moung Young LEE ,  Ji Ho LEE ,  Ji Won LEE

Inventor： Moung Young LEE ,  Ji Ho LEE ,  Ji Won LEE

IPC: B65D51/18 ,  B65D47/12 ,  B65D47/26 ,  B65D47/32 ,  B65D53/02

Abstract: A cap system is disclosed. The cap system includes an inner bottle cap including an upper cover unit with a discharge hole, a side cover unit protruding downward from the upper cover unit, and a stopper protruding upward from an upper surface of the upper cover unit, wherein an inner thread is formed on an inner surface of the side cover unit to engage with a thread formed at an inlet of the storage container, and an O-ring groove is formed on an outer surface of the side cover unit, a body unit including a cover unit covering a portion of an upper portion of the body unit, an opening hole opening a portion of the upper portion and a stoppage unit configure to protrude downward from a lower surface of the cover unit and be caught by the stopper of the inner bottle cap wherein an opening is formed in a lower portion of the body unit and a space portion is formed therein for inserting the inner bottle cap, a coupling unit configured to be formed to protrude upward from the body unit in order to be inserted into and fixed to the inner bottle cap, and an O-ring for sealing between the body unit and the inner bottle cap.

公开(公告)号：US20150372038A1

公开(公告)日：2015-12-24

申请号：US14741740

申请日：2015-06-17

Applicant: Ji Won LEE ,  Seung Sik KIM ,  Young Chan KIM ,  Tae Han KIM ,  Eun Sub SHIM ,  Dong Joo YANG ,  Min Seok OH ,  Moo Sup LIM

Inventor： Ji Won LEE ,  Seung Sik KIM ,  Young Chan KIM ,  Tae Han KIM ,  Eun Sub SHIM ,  Dong Joo YANG ,  Min Seok OH ,  Moo Sup LIM

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/14609 ,  H01L27/14643 ,  H04N5/3592 ,  H04N5/3696 ,  H04N5/378

Abstract: An image sensor capable of boosting a voltage of a floating diffusion node is provided. The image sensor includes a floating diffusion node and a storage element which are in a semiconductor substrate. The image sensor includes a first light-shielding material formed over the floating diffusion node, and a second light-shielding material formed over the storage diode. The second light-shielding material is separated from the first light-shielding material. The image sensor also includes a first voltage supply line configured to apply a first voltage to the first light-shielding material and a second voltage supply line configured to apply a second voltage lower than the first voltage to the second light-shielding material.

Abstract translation: 提供能够提高浮动扩散节点的电压的图像传感器。 图像传感器包括位于半导体衬底中的浮动扩散节点和存储元件。 图像传感器包括形成在浮动扩散节点上的第一遮光材料和形成在存储二极管上的第二遮光材料。 第二遮光材料与第一遮光材料分离。 图像传感器还包括被配置为向第一遮光材料施加第一电压的第一电压供给线和被配置为将低于第一电压的第二电压施加到第二遮光材料的第二电压供给线。