公开(公告)号：US07208752B2

公开(公告)日：2007-04-24

申请号：US10840267

申请日：2004-05-07

申请人： Mu-Jen Lai ,  Schang-Jing Hon ,  Hsueh-Feng Sun ,  Shih-Ming Yang

发明人： Mu-Jen Lai ,  Schang-Jing Hon ,  Hsueh-Feng Sun ,  Shih-Ming Yang

IPC分类号： H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

CPC分类号： H01L33/32 ,  H01L33/14 ,  Y10S257/918

摘要： A structure of a gallium nitride light emitting diode has a transparent conductive window layer including a diffusion barrier layer, an ohmic contact layer, and a window layer. By using the added domain contact layer, the diffusion barrier layer and the P-type semiconductor layer of the light emitting diode are put into ohmic contact. And then, the rising of the contact resistivity is barred by applying the diffusion barrier layer to block the diffusion of the window layer from the contact with the domain contact layer so as to lower down the operating voltage and advance the transparency.

摘要翻译： 氮化镓发光二极管的结构具有包括扩散阻挡层，欧姆接触层和窗口层的透明导电窗口层。 通过使用添加的畴接触层，发光二极管的扩散阻挡层和P型半导体层被欧姆接触。 然后，通过施加扩散阻挡层来阻止窗口层与域接触层的接触的扩散，从而降低工作电压并提高透明度，阻止了接触电阻率的上升。

公开(公告)号：US20050191179A1

公开(公告)日：2005-09-01

申请号：US10840267

申请日：2004-05-07

申请人： Mu-Jen Lai ,  Schang-Jing Hon ,  Hsueh-Feng Sun ,  Shih-Ming Yang

发明人： Mu-Jen Lai ,  Schang-Jing Hon ,  Hsueh-Feng Sun ,  Shih-Ming Yang

IPC分类号： H01L21/28 ,  H01L31/0328 ,  H01L33/14 ,  H01L33/32 ,  H01L33/42

CPC分类号： H01L33/32 ,  H01L33/14 ,  Y10S257/918

摘要： A structure and manufacturing of a gallium nitride light emitting diode discloses a transparent conductive window layer comprising a diffusion barrier layer, an ohmic contact layer, and a window layer. By using the added domain contact layer, the diffusion barrier layer and the P-type semiconductor layer of the light emitting diode are put into ohimc contact. And then, the rising of the contact resistivity is barred by applying the diffusion barrier layer to block the diffusion of the window layer from the contact with the domain contact layer so as to lower down the operating voltage and advance the transparency.

摘要翻译： 氮化镓发光二极管的结构和制造公开了包括扩散阻挡层，欧姆接触层和窗口层的透明导电窗口层。 通过使用添加的畴接触层，发光二极管的扩散阻挡层和P型半导体层被接触。 然后，通过施加扩散阻挡层来阻止窗口层与域接触层的接触的扩散，从而降低工作电压并提高透明度，阻止了接触电阻率的上升。

公开(公告)号：US4933788A

公开(公告)日：1990-06-12

申请号：US271114

申请日：1988-11-14

申请人： Bhupendrabhai F. Patel ,  Howard A. Feinberg ,  George Tsai ,  Shih-Ming Yang ,  Richard A. Wilkinson, Jr. ,  Enoch Mylabathula

发明人： Bhupendrabhai F. Patel ,  Howard A. Feinberg ,  George Tsai ,  Shih-Ming Yang ,  Richard A. Wilkinson, Jr. ,  Enoch Mylabathula

IPC分类号： G11B15/665 ,  G11B15/675

CPC分类号： G11B15/6653 ,  G11B15/67536 ,  G11B15/67565

摘要： A tape withdrawal and positioning system is provided for withdrawing tape from its initial position within a tape cassette and positioning it in proximity to or in contact with a tape recording and/or reproducing apparatus. The tape withdrawal and positioning system comprises a pair of lever arms having tape guide posts adjustable between an initial position wherein the tape guide posts are positioned behind an access portion of the tape within the tape cassette and an operating position whereon the lever arms are extended and the tape guide posts are positioned in proximity to the recording and/or reproducing apparatus. In the operating position, and tape is in contact with a portion of the recording and/or reproducing apparatus.

摘要翻译： 提供磁带取出和定位系统，用于从磁带盒中的初始位置取出磁带，并将其定位在与磁带记录和/或再现装置接近或接触的位置。 带取出和定位系统包括一对杠杆臂，带杆引导柱在初始位置之间可调节，其中带引导柱位于带盒内的带的进入部分的后面以及杆臂延伸的操作位置， 带导向柱位于记录和/或再现装置附近。 在操作位置，并且磁带与记录和/或再现设备的一部分接触。