公开(公告)号：US20060066574A1

公开(公告)日：2006-03-30

申请号：US10476519

申请日：2003-10-20

申请人： Munsang Kim ,  Dongseok Ryu ,  Changhyun Cho ,  Changsoon Hwang

发明人： Munsang Kim ,  Dongseok Ryu ,  Changhyun Cho ,  Changsoon Hwang

IPC分类号： G09G5/08

CPC分类号： G06F3/016 ,  G05G7/02 ,  G05G9/04737 ,  G06F3/0338 ,  G06F3/0346

摘要： The present invention relates to a haptic joystick system that is used with a computer system. The system according to the present invention includes the mechanism comprising the first link work and the second link work that respectively conduct 3 degree-of-freedom independently and are serially connected to each other. Therefore the said mechanism conducts 6 degree-of-freedom. The said mechanism is provided at its base plane with sensors and actuators, whereby not being affected by the inertia of the sensors and the actuators. Also, in the system according to the present invention, the first link work conducts 3 degree-of-freedom among the overall 6 degree-of-freedom that are frequently used in its application, and the second link work conducts another 3 degree-of-freedom. Thereby, the system according to the present invention can achieve the enhanced performance related to the energy effectiveness and the controllability.

摘要翻译： 本发明涉及一种与计算机系统一起使用的触觉操纵杆系统。 根据本发明的系统包括包括分别独立地并且彼此串联连接的3个独立自由度的第一链接工作和第二链接工作的机构。 所以这个机制是6度自由的。 所述机构在其基面设置有传感器和致动器，由此不受传感器和致动器的惯性的影响。 此外，在本发明的系统中，第一连接工​​作在其应用中经常使用的整体6自由度之间进行3自由度，第二连接工作传导另外3度 -自由。 因此，根据本发明的系统可以实现与能量效率和可控性相关的增强的性能。

公开(公告)号：US07138981B2

公开(公告)日：2006-11-21

申请号：US10476519

申请日：2003-10-20

申请人： Munsang Kim ,  Dongseok Ryu ,  Changhyun Cho ,  Changsoon Hwang

发明人： Munsang Kim ,  Dongseok Ryu ,  Changhyun Cho ,  Changsoon Hwang

IPC分类号： G09G5/08

CPC分类号： G06F3/016 ,  G05G7/02 ,  G05G9/04737 ,  G06F3/0338 ,  G06F3/0346

摘要： The present invention relates to a haptic joystick system that is used with a computer system. The system according to the present invention includes the mechanism comprising the first link work and the second link work that respectively conduct 3 degree-of-freedom independently and are serially connected to each other. Therefore the said mechanism conducts 6 degree-of-freedom. The said mechanism is provided at its base plane with sensors and actuators, whereby not being affected by the inertia of the sensors and the actuators. Also, in the system according to the present invention, the first link work conducts 3 degree-of-freedom among the overall 6 degree-of-freedom that are frequently used in its application, and the second link work conducts another 3 degree-of-freedom. Thereby, the system according to the present invention can achieve the enhanced performance related to the energy effectiveness and the controllability.

公开(公告)号：US20140110816A1

公开(公告)日：2014-04-24

申请号：US14057530

申请日：2013-10-18

申请人： Keunnam Kim ,  Sunyoung Park ,  Kyehee Yeom ,  Hyeon-Woo Jang ,  Jin-Won Jeong ,  Changhyun Cho ,  HyeongSun Hong

发明人： Keunnam Kim ,  Sunyoung Park ,  Kyehee Yeom ,  Hyeon-Woo Jang ,  Jin-Won Jeong ,  Changhyun Cho ,  HyeongSun Hong

IPC分类号： H01L27/10

CPC分类号： H01L27/10888 ,  H01L21/26513 ,  H01L21/7682 ,  H01L21/76897 ,  H01L27/10855 ,  H01L27/10885

摘要： Provided are semiconductor devices and methods of fabricating the same. In methods of forming the same, an etch stop pattern and a separate spacer can be formed on a sidewall of a bit line contact, wherein the etch stop pattern and the separate spacer each comprise material having an etch selectivity relative to an oxide. A storage node contact plug hole can be formed so that the etch stop pattern and the separate spacer form a portion of a sidewall of the storage node contact plug hole spaced apart from the bit line contact. The storage node contact plug hole can be cleaned to remove a natural oxide formed in the storage node contact plug hole. Related devices are also disclosed.

摘要翻译： 提供半导体器件及其制造方法。 在其形成方法中，可以在位线接触的侧壁上形成蚀刻停止图案和单独的间隔物，其中蚀刻停止图案和分离间隔物各自包含相对于氧化物具有蚀刻选择性的材料。 可以形成存储节点接触插塞孔，使得蚀刻停止图案和分离的间隔件形成与位线接触件间隔开的存储节点接触插塞孔的侧壁的一部分。 存储节点接触塞孔可以被清洁以去除存储节点接触塞孔中形成的天然氧化物。 还公开了相关设备。

公开(公告)号：US20150333071A1

公开(公告)日：2015-11-19

申请号：US14755690

申请日：2015-06-30

申请人： Keunnam Kim ,  Sunyoung Park ,  Kyehee Yeom ,  Hyeon-Woo Jang ,  Jin-Won Jeong ,  Changhyun Cho ,  HyeongSun Hong

发明人： Keunnam Kim ,  Sunyoung Park ,  Kyehee Yeom ,  Hyeon-Woo Jang ,  Jin-Won Jeong ,  Changhyun Cho ,  HyeongSun Hong

IPC分类号： H01L27/108 ,  H01L21/265 ,  H01L21/768

CPC分类号： H01L27/10888 ,  H01L21/26513 ,  H01L21/7682 ,  H01L21/76897 ,  H01L27/10855 ,  H01L27/10885

摘要： Provided are semiconductor devices and methods of fabricating the same. In methods of forming the same, an etch stop pattern and a separate spacer can be formed on a sidewall of a bit line contact, wherein the etch stop pattern and the separate spacer each comprise material having an etch selectivity relative to an oxide. A storage node contact plug hole can be formed so that the etch stop pattern and the separate spacer form a portion of a sidewall of the storage node contact plug hole spaced apart from the bit line contact. The storage node contact plug hole can be cleaned to remove a natural oxide formed in the storage node contact plug hole. Related devices are also disclosed.

摘要翻译： 提供半导体器件及其制造方法。 在其形成方法中，可以在位线接触的侧壁上形成蚀刻停止图案和单独的间隔物，其中蚀刻停止图案和分离间隔物各自包含相对于氧化物具有蚀刻选择性的材料。 可以形成存储节点接触插塞孔，使得蚀刻停止图案和分离的间隔件形成与位线接触件间隔开的存储节点接触插塞孔的侧壁的一部分。 存储节点接触塞孔可以被清洁以去除存储节点接触塞孔中形成的天然氧化物。 还公开了相关设备。

公开(公告)号：US09099343B2

公开(公告)日：2015-08-04

申请号：US14057530

申请日：2013-10-18

申请人： Keunnam Kim ,  Sunyoung Park ,  Kyehee Yeom ,  Hyeon-Woo Jang ,  Jin-Won Jeong ,  Changhyun Cho ,  HyeongSun Hong

发明人： Keunnam Kim ,  Sunyoung Park ,  Kyehee Yeom ,  Hyeon-Woo Jang ,  Jin-Won Jeong ,  Changhyun Cho ,  HyeongSun Hong

IPC分类号： H01L21/70 ,  H01L27/108 ,  H01L21/768

CPC分类号： H01L27/10888 ,  H01L21/26513 ,  H01L21/7682 ,  H01L21/76897 ,  H01L27/10855 ,  H01L27/10885

摘要： Provided are semiconductor devices and methods of fabricating the same. In methods of forming the same, an etch stop pattern and a separate spacer can be formed on a sidewall of a bit line contact, wherein the etch stop pattern and the separate spacer each comprise material having an etch selectivity relative to an oxide. A storage node contact plug hole can be formed so that the etch stop pattern and the separate spacer form a portion of a sidewall of the storage node contact plug hole spaced apart from the bit line contact. The storage node contact plug hole can be cleaned to remove a natural oxide formed in the storage node contact plug hole. Related devices are also disclosed.

摘要翻译： 提供半导体器件及其制造方法。 在其形成方法中，可以在位线接触的侧壁上形成蚀刻停止图案和单独的间隔物，其中蚀刻停止图案和分离间隔物各自包含相对于氧化物具有蚀刻选择性的材料。 可以形成存储节点接触插塞孔，使得蚀刻停止图案和分离的间隔件形成与位线接触件间隔开的存储节点接触插塞孔的侧壁的一部分。 存储节点接触塞孔可以被清洁以去除存储节点接触塞孔中形成的天然氧化物。 还公开了相关设备。

公开(公告)号：US08499724B2

公开(公告)日：2013-08-06

申请号：US12825933

申请日：2010-06-29

申请人： Changhyun Cho

发明人： Changhyun Cho

IPC分类号： F01P5/10 ,  F01P7/14

CPC分类号： F01P5/12

摘要： An engine that is equipped with a water pump, may include a pump housing that is mounted on one side of a cylinder block with an impeller rotatably mounted on a front side thereof to pump coolant, an inlet fitting that is mounted on the cylinder block at a predetermined distance from the pump housing such that the coolant flows through the inlet fitting, and a connecting body that integrally connects the pump housing with the inlet fitting to form one body.

摘要翻译： 配备有水泵的发动机可以包括：泵壳体，其安装在气缸体的一侧，其中叶轮可旋转地安装在其前侧以泵送冷却剂;入口配件，其安装在气缸体上 距离泵壳体预定的距离，使得冷却剂流过入口配件;以及连接体，其将泵壳体与入口配件一体地连接以形成一体。