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公开(公告)号：US20190312608A1
公开(公告)日：2019-10-10
申请号：US16451522
申请日：2019-06-25
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Hideki MUTO
Abstract: A high-frequency module (20) includes a reception-side filter (21) that uses a first frequency band as a pass band and a second frequency band as an attenuation band, an LNA (23), and a matching circuit (22) disposed between the reception-side filter (21) and the LNA (23). In a Smith chart, the matching circuit (22) makes an interval between impedance in the second frequency band of the reception-side filter (21) and a second gain circle center point indicating impedance at which gain in the second frequency band of the LNA (23) is maximized greater than an interval between impedance in the first frequency band of the reception-side filter (21) and a first gain circle center point indicating impedance at which gain in the first frequency band of the LNA (23) is maximized.
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公开(公告)号：US20210151397A1
公开(公告)日：2021-05-20
申请号：US17161882
申请日：2021-01-29
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Yusuke NANIWA , Hideki MUTO
IPC: H01L23/66 , H01Q1/22 , H01L23/538 , H01L23/31 , H01L23/552
Abstract: A radio-frequency module includes: a module substrate having first and second main surfaces; a semiconductor IC having third and fourth main surfaces and mounted on the first main surface with the third main surface between the module substrate and the fourth main surface; and first and second electrodes extending perpendicularly to the first main surface. The cross-sectional area of the second electrodes is smaller than the cross-sectional area of the first electrodes. The semiconductor IC viewed in plan has first and second sides parallel to each other and third and fourth sides parallel to each other. The first electrodes are distributed over a first region between the first side and a side facing the first side and a second region between the second side and a side facing the second side. The second electrodes are in a third region between the third side and a side facing the third side.
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公开(公告)号：US20150223319A1
公开(公告)日：2015-08-06
申请号：US14688029
申请日：2015-04-16
Applicant: MURATA MANUFACTURING CO., LTD.
Inventor： Hideki MUTO
CPC classification number: H03H7/0115 , H01L2224/48227 , H03F1/565 , H03F3/19 , H03F3/195 , H03F3/21 , H03F2200/165 , H03F2200/447 , H03H7/0161 , H03H7/1775 , H03H2001/0085 , H04B1/18 , H05K1/0206 , H05K1/0243 , H05K1/0298 , H05K1/162 , H05K1/165
Abstract: A high frequency module includes a multilayer substrate, a power amplifier, thermal vias, and a bandpass filter. The power amplifier is mounted on the multilayer substrate. The thermal vias are provided in the multilayer substrate directly below the power amplifier and configured to dissipate heat of the power amplifier. The bandpass filter is provided in the multilayer substrate and connected to the power amplifier. The thermal via defines an inductor included in the bandpass filter. The bandpass filter overlaps the power amplifier when viewed in a lamination direction of the multilayer substrate.
Abstract translation: 高频模块包括多层衬底，功率放大器，热通孔和带通滤波器。 功率放大器安装在多层基板上。 热通孔设置在功率放大器正下方的多层基板中，并配置为消散功率放大器的热量。 带通滤波器设置在多层基板中并连接到功率放大器。 热通道定义了带通滤波器中包含的电感器。 当从多层基板的层叠方向观察时，带通滤波器与功率放大器重叠。
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公开(公告)号：US20220255578A1
公开(公告)日：2022-08-11
申请号：US17661055
申请日：2022-04-28
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Hideki MUTO
Abstract: Isolation between the first path and second path is increased. A radio frequency module includes a first inductor, a second inductor, a third inductor, and a switch. The first inductor is provided in a first path through which a first communication signal travels. The second inductor is provided in a second path through which a second communication signal travels, the second path being used simultaneously with the first path. The third inductor is provided in a third path through which a third communication signal travels, the third path not being used simultaneously with the first path. The switch is provided between ground and a node in the third path and is connected to the third inductor. The third inductor is arranged between the first inductor and the second inductor.
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公开(公告)号：US20190296783A1
公开(公告)日：2019-09-26
申请号：US16435645
申请日：2019-06-10
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Yusuke NANIWA , Hideki MUTO
Abstract: A radio frequency module includes a first receive circuit that processes a receive signal in the first frequency band. The first receive circuit includes a first substrate, a first low noise amplifier, and a first filter circuit. The first low noise amplifier is mounted on a principal surface of the first substrate. The first filter circuit is connected to an output end of the first low noise amplifier. At least a portion of the first filter circuit is provided on the principal surface of the first substrate. The first filter circuit attenuates spurious components occurring due to a transmit signal in the first frequency band received by the first low noise amplifier. The spurious components are included in the transmit signal in the first frequency band and have a frequency bandwidth that overlaps, includes, or is included in the frequency bandwidth of the receive signal in the second frequency band.
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Patent Agency Ranking
公开(公告)号：US20190238169A1
公开(公告)日：2019-08-01
申请号：US16377326
申请日：2019-04-08
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Yusuke NANIWA , Hideki MUTO
CPC classification number: H04B1/1027 , H04B1/00 , H04B1/10 , H04B1/1018 , H04B1/38
Abstract: An RF module includes a switch IC on a surface of a module substrate and a passive circuit provided in and/or on the module substrate. The switch IC includes a high-frequency circuit on an IC substrate and a digital control circuit. In a plan view of the IC substrate, the digital control circuit is surrounded by the high-frequency circuit. The high-frequency circuit includes analog ground electrodes in a boundary portion with the digital control circuit in the high-frequency circuit to surround the digital control circuit in the plan view.
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公开(公告)号：US20200228151A1
公开(公告)日：2020-07-16
申请号：US16831929
申请日：2020-03-27
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Yusuke NANIWA , Hideki MUTO , Yukiya YAMAGUCHI , Shun HARADA
Abstract: A semiconductor device includes a base, a first switching unit disposed on the base, the first switching unit having a substantially rectangular shape and including plural first switches, and an amplifier unit disposed on the base, the amplifier unit including plural amplifier circuits to which a radio-frequency signal is inputted after passing through the first switching unit. In plan view of the base, the first switching unit has four edges including a first edge, a second edge orthogonal to the first edge, and a third edge parallel to the first edge and orthogonal to the second edge, the amplifier unit includes a first region extending along the first edge, a second region extending along the second region, and a third region extending along the third edge, and at least one of the plural amplifier circuits is disposed in each of the first region, the second region, and the third region.
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公开(公告)号：US20190052241A1
公开(公告)日：2019-02-14
申请号：US16161117
申请日：2018-10-16
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Hideki MUTO
Abstract: A high-frequency module includes a plurality of filters, a switch that commonly connects a plurality of paths, and a low noise amplifier that amplifies a high-frequency signal input from the plurality of filters with the switch interposed therebetween, wherein paths in which first and second filters are respectively provided among the plurality of paths connect the respective filters and the switch without connecting impedance elements, and each of the first and second filters has an output impedance located in a matching region between a NF matching impedance at which an NF of the low noise amplifier is minimum and a gain matching impedance at which a gain of the low noise amplifier is maximum in its respective pass band thereof on a Smith chart.
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公开(公告)号：US20160164491A1
公开(公告)日：2016-06-09
申请号：US15045320
申请日：2016-02-17
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Hideki MUTO
CPC classification number: H03H9/725 , H03H9/0057 , H03H9/542 , H03H9/64 , H03H9/706
Abstract: In a high-frequency module, a phase and amplitude of a high-frequency signal from a connection conductor between filter devices change due to the signal being transmitted by a takeout circuit unit. When the high-frequency signal at a third external connection terminal is a suppression signal and a high-frequency signal passing through the first filter circuit is a suppression-target signal, the transmission distance in the takeout circuit unit is such that the phase of the suppression signal is approximately inverted with respect to the phase of the suppression-target signal and the suppression signal has approximately the same amplitude as the suppression-target signal. The suppression signal is mixed with the suppression-target signal and components outside of the pass band are cancelled out and the attenuation characteristics of the filter circuit are enhanced.
Abstract translation: 在高频模块中，来自滤波器装置之间的连接导体的高频信号的相位和幅度由于由取出电路单元发送的信号而变化。 当第三外部连接端子处的高频信号是抑制信号，并且通过第一滤波器电路的高频信号是抑制目标信号时，取出电路单元中的传输距离使得 抑制信号相对于抑制目标信号的相位近似反转，并且抑制信号具有与抑制目标信号大致相同的幅度。 抑制信号与抑制目标信号混合，并且抵消通带外的部件被抵消，并且滤波器电路的衰减特性增强。
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公开(公告)号：US20240322848A1
公开(公告)日：2024-09-26
申请号：US18732820
申请日：2024-06-04
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Hideki MUTO
CPC classification number: H04B1/0078 , H04B1/0017 , H04B1/18
Abstract: A high frequency circuit includes: a switch that has terminals, and that switches connection and disconnection between the terminals; a filter that has a first pass band including at least a part of band A and that is connected to one of the terminals; another filter that has a second pass band including at least a part of band B and that is connected to another one of the terminals; and an acoustic wave resonator that has its first end connected to even another of the terminals and its second end connected to the terminal.
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