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    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    2.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权

    公开(公告)号：US20220293552A1

    公开(公告)日：2022-09-15

    申请号：US17198252

    申请日：2021-03-11

    申请人： NANYA TECHNOLOGY CORPORATION

    发明人： Yi-Jen Lo ,  Hsih Yang Chiu ,  Ching Hung Chang ,  Chiang-Lin Shih

    IPC分类号： H01L23/00 ,  H01L25/065 ,  H01L25/00

    摘要： The disclosure provides a method of manufacturing a semiconductor device including bonding a second device wafer to a first device wafer, such that a first bonding interface including a dielectric-to-dielectric bonding interface and a metal-to-metal bonding interface is formed between the first device wafer and the second device wafer, wherein the second device wafer is electrically coupled to the first device wafer, and a function of the first device wafer and the second device wafer are the same kind of device wafer. A semiconductor device is also provided.

    Semiconductor structure
    5.
    发明授权
    Semiconductor structure 有权

    公开(公告)号：US12133378B2

    公开(公告)日：2024-10-29

    申请号：US17707977

    申请日：2022-03-30

    申请人： NANYA TECHNOLOGY CORPORATION

    发明人： Wei Zhong Li ,  Hsih Yang Chiu

    IPC分类号： H10B20/20

    CPC分类号： H10B20/20

    摘要： A semiconductor structure including a semiconductor substrate, an active area, a transistor gate, a fuse gate, a first dielectric pattern, a second dielectric pattern and a plurality of metal lines is provided. The active area is disposed in the semiconductor substrate. The transistor gate has a first line segment and a second line segment extending across the active area in a first direction. The fuse gate located between the first line segment and the second line segment extends across the active area in the first direction. The first dielectric pattern is disposed between the active area and the transistor gate. The second dielectric pattern is disposed between the active area and the fuse gate. The metal lines disposed on two opposite sides of the transistor gate are electrically connected to the active device.

    SEMICONDUCTOR STRUCTURE
    7.
    发明公开
    SEMICONDUCTOR STRUCTURE 审中-公开

    公开(公告)号：US20230320083A1

    公开(公告)日：2023-10-05

    申请号：US17707977

    申请日：2022-03-30

    申请人： NANYA TECHNOLOGY CORPORATION

    发明人： Wei Zhong Li ,  Hsih Yang Chiu

    IPC分类号： H01L27/112

    CPC分类号： H01L27/11206

    摘要： A semiconductor structure including a semiconductor substrate, an active area, a transistor gate, a fuse gate, a first dielectric pattern, a second dielectric pattern and a plurality of metal lines is provided. The active area is disposed in the semiconductor substrate. The transistor gate has a first line segment and a second line segment extending across the active area in a first direction. The fuse gate located between the first line segment and the second line segment extends across the active area in the first direction. The first dielectric pattern is disposed between the active area and the transistor gate. The second dielectric pattern is disposed between the active area and the fuse gate. The metal lines disposed on two opposite sides of the transistor gate are electrically connected to the active device.