专利检索 ap:("NAT RES DEV") AND inv:"DRABBLE JOHN R" 第 1 页

1.

发明授权
Method of growing a crystal or crystalline layer by means of a direct current arc discharge 失效
标题翻译：通过直接电流放电来生长晶体或晶体层的方法

公开(公告)号：US3442719A

公开(公告)日：1969-05-06

申请号：US3442719D

申请日：1968-05-24

申请人： NAT RES DEV

发明人： DRABBLE JOHN R , PALMER ANTHONY WILLIAM

IPC分类号： C30B11/00 , C30B11/10 , C30B13/08 , C30B13/16 , C30B23/00 , H01L7/00

CPC分类号： C30B23/005 , C30B11/00 , C30B11/003 , C30B11/005 , C30B11/10 , C30B13/08 , C30B13/16 , C30B29/16 , C30B29/24 , Y10S117/906

摘要： 1,171,005. Crystallizing cerium or lanthanum oxide. J. R. DRABBLE and A. W. PALMER. 16 May, 1968 [26 May, 1967], No. 24721/67. Heading B1S. [Also in Division Cl] A crystalline rod 14 of cerium or lanthanum oxide is grown on a cathode 11 from a molten zone 15 fed with material from a consumable anode 10 of the material during passage of an electric discharge from the cathode to the anode.. The cathode may be of the same material or of carbon capped therewith. The anode may be above (as shown) or below the cathode.