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    MONOCRYSTALLINE SEMICONDUCTOR MATERIALS
    3.
    发明申请
    MONOCRYSTALLINE SEMICONDUCTOR MATERIALS 审中-公开
    单晶半导体材料

    公开(公告)号：US20130199440A1

    公开(公告)日：2013-08-08

    申请号：US13639170

    申请日：2011-04-11

    申请人： Uwe Kerat ,  Christian Schmid ,  Jochem Hahn

    发明人： Uwe Kerat ,  Christian Schmid ,  Jochem Hahn

    IPC分类号： C30B11/00

    CPC分类号： C30B11/003 ,  B22D27/045 ,  C30B11/005 ,  C30B11/08 ,  C30B15/08 ,  C30B29/06 ,  C30B35/00 ,  Y10T117/1092

    摘要： A method of producing a monocrystalline semiconductor material includes providing a starting material composed of the semiconductor material, transferring the starting material into a heating zone in which a melt composed of the semiconductor material is fed with the starting material, and lowering the melt from the heating zone and/or raising the heating zone such that, at a lower end portion of the melt, a solidification front forms along which the semiconductor material crystallizes in a desired structure, wherein the starting material composed of the semiconductor material is provided in liquid form and fed into the melt in liquid form.

    摘要翻译： 一种制造单晶半导体材料的方法包括提供由半导体材料构成的原料，将原料转移到由半导体材料构成的熔融物与原料一起供给的加热区域中，并且使熔体从加热 区域和/或升高加热区域，使得在熔体的下端部分形成凝固正面，半导体材料沿着该固化前沿结构以期望的结构结晶，其中由半导体材料构成的起始材料以液体形式提供， 以液体形式进料到熔体中。

    Method for forming a single crystal silicon layer
    4.
    发明授权
    Method for forming a single crystal silicon layer 失效
    单晶硅层的形成方法

    公开(公告)号：US4578143A

    公开(公告)日：1986-03-25

    申请号：US526453

    申请日：1983-08-25

    申请人： Tetsuji Arai

    发明人： Tetsuji Arai

    IPC分类号： C01B33/02 ,  C30B1/02 ,  C30B11/00 ,  C30B13/24 ,  C30B29/06 ,  H01L21/20 ,  C30B1/08

    CPC分类号： C30B13/24 ,  C30B11/005

    摘要： Disclosed herein is a process for forming a single crystal silicon layer by heating a wafer, which is made of a single crystal silicon substrate and a starting silicon layer made of amorphous or polycrystalline silicon and provided on the silicon substrate, in accordance with the epitaxial growth technique. The process comprises providing a heat source which is formed of a plurality of tubular lamps provided side by side with their longitudinal axes extending substantially in parallel with one another in a second plane lying above and substantially in parallel with a first plane--in which the wafer is placed--and a tubular melting-lamp provided at a position between the first and second planes and with its longitudinal axis substantially in parallel with the longitudinal axes of the tubular lamps in the second plane; and moving the wafer in the first plane and in a direction perpendicular to the longitudinal axes of the plurality of tubular lamps and that of the tubular melting-lamp in a state that all the tubular lamps of the heat source, including the tubular melting-lamp, are lit on. The above process can convert the starting silicon layer in its entirety into a single crystal silicon layer in a relatively short period of time and without danger of damaging the wafer. The above process facilitates formation of single crystal silicon layers which make up SOI structures.

    摘要翻译： 本文公开了一种通过加热由单晶硅衬底和由非晶或多晶硅制成的并由硅衬底制成的起始硅层的晶片，根据外延生长形成单晶硅层的工艺 技术。 该方法包括提供一个热源，该热源由并排设置的多个管状灯形成，它们的纵向轴线基本平行于第一平面的第二平面彼此平行延伸，其中晶片 并且管状熔化灯设置在第一和第二平面之间的位置处，并且其纵向轴线基本上与第二平面中的管状灯的纵向轴线平行; 以及在包括所述管式熔融灯的所述热源的所有管状灯的状态下，使所述晶片在所述第一平面中并且垂直于所述多个管状灯和所述管状熔融灯的纵轴的方向移动 ，点亮了。 上述过程可以在较短时间内将起始硅层整体转化为单晶硅层，而不会损坏晶片。 上述工艺便于形成构成SOI结构的单晶硅层。

    SILICON CRYSTALLIZATION APPARATUS AND SILICON CRYSTALLIZATION METHOD THEREOF
    5.
    发明申请
    SILICON CRYSTALLIZATION APPARATUS AND SILICON CRYSTALLIZATION METHOD THEREOF 有权
    硅结晶装置及其结晶方法

    公开(公告)号：US20100255663A1

    公开(公告)日：2010-10-07

    申请号：US12767407

    申请日：2010-04-26

    申请人： Yun Ho JUNG ,  Young Joo Kim

    发明人： Yun Ho JUNG ,  Young Joo Kim

    IPC分类号： H01L21/20

    CPC分类号： H01L21/0268 ,  B23K26/0622 ,  B23K26/0823 ,  B23K26/0853 ,  B23K37/0461 ,  C30B11/005 ,  C30B29/06 ,  H01L21/2026 ,  H01L21/68

    摘要： A silicon crystallization method renders it is possible to form alignment key without additional photolithography, and to adjust a substrate to a correct position by sensing a deviation of the substrate when the substrate is loaded. The silicon crystallization method includes aligning the substrate by sensing a fixed substrate with a sensing device, and moving and/or rotating a stage, wherein the sensing device faces toward an edge of the substrate to directly sense the edge of the substrate; forming alignment keys on predetermined portions of a non-display area of the substrate by correspondingly placing a mask for formation of an alignment key above the substrate; and crystallizing an amorphous silicon by correspondingly providing a mask for crystallization above the substrate.

    摘要翻译： 硅结晶方法使得可以在没有附加光刻的情况下形成对准键，并且通过在衬底被加载时感测衬底的偏差来将衬底调整到正确的位置。 硅结晶方法包括通过感测固定基板与感测装置对基板进行定位，以及移动和/或旋转载物台，其中感测装置面向基板的边缘以直接感测基板的边缘; 通过相应地放置用于在基板上方形成对准键的掩模，在基板的非显示区域的预定部分上形成对准键; 并通过相应地在衬底上提供用于结晶的掩模来结晶非晶硅。

    Heating electrode assembly for crystal growth furnace
    10.
    发明授权
    Heating electrode assembly for crystal growth furnace 有权
    用于晶体生长炉的加热电极组件

    公开(公告)号：US08891585B2

    公开(公告)日：2014-11-18

    申请号：US13937908

    申请日：2013-07-09

    申请人： UTECH Solar Corporation

    发明人： Chih-Wei Huang ,  Jen-Min Shao ,  An-Chun Liu

    IPC分类号： H05B3/14 ,  F27D1/00 ,  C30B35/00 ,  C30B15/00 ,  H05B3/66 ,  F27B14/06 ,  H05B3/03

    CPC分类号： H05B3/66 ,  C30B11/005 ,  C30B35/00 ,  F27B14/06 ,  H05B3/03 ,  Y10T117/10 ,  Y10T117/1068

    摘要： A heating electrode assembly for a crystal growth furnace includes: a heat insulation board unit that is disposed between a furnace wall and a heater, that includes a first surface facing the furnace wall and a second surface facing the heater, and that is formed with a hole extending through the first surface and the second surface; an electrode unit that includes an electricity input portion mounted to the furnace wall, a post portion disposed in the hole, and an abutment flange connecting the post portion and the heater; and an electrical insulating unit including a tubular sleeve that is disposed in the hole and that surrounds the post portion, and a pad that is clamped between the abutment flange and the second surface.

    摘要翻译： 一种用于晶体生长炉的加热电极组件包括：设置在炉壁和加热器之间的隔热板单元，其包括面向炉壁的第一表面和面对加热器的第二表面，并且形成有 孔延伸穿过第一表面和第二表面; 电极单元，其包括安装到所述炉壁的电输入部，设置在所述孔中的柱部，以及连接所述柱部和所述加热器的抵接凸缘; 以及电绝缘单元，其包括设置在所述孔中且围绕所述柱部的管状套筒，以及夹持在所述邻接凸缘和所述第二表面之间的垫。