公开(公告)号：US07001455B2

公开(公告)日：2006-02-21

申请号：US10215391

申请日：2002-08-08

申请人： Mary C. Cretella ,  Richard L. Wallace, Jr.

发明人： Mary C. Cretella ,  Richard L. Wallace, Jr.

IPC分类号： C30B13/08 ,  C30B13/10

CPC分类号： H01L21/228 ,  H01L21/2225 ,  H01L31/0288 ,  H01L31/1804 ,  H01L31/182 ,  H01L31/184 ,  Y02E10/544 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

摘要： Semiconductor materials such as silicon particles are doped by mixing the semiconductor material with a solution having a dopan and a solvent. The solvent is removed from the wetted surface of the particles of the semiconductor material, thereby yielding particles that are substantially free from the solvent and are uniformly coated with the dopant.

摘要翻译： 通过将半导体材料与具有二苯并吡喃和溶剂的溶液混合来掺杂半导体材料如硅颗粒。 从半导体材料的颗粒的润湿表面除去溶剂，从而产生基本上不含溶剂并且均匀地涂覆有掺杂剂的颗粒。

公开(公告)号：US5089082A

公开(公告)日：1992-02-18

申请号：US591703

申请日：1990-10-02

申请人： Peter Dreier ,  Wilfried von Ammon ,  Heinz Winterer

发明人： Peter Dreier ,  Wilfried von Ammon ,  Heinz Winterer

IPC分类号： C30B13/00 ,  C30B13/08 ,  C30B13/10 ,  C30B13/20 ,  C30B29/06 ,  H01L21/208

CPC分类号： C30B29/06 ,  C30B13/10 ,  C30B13/20

摘要： Silicon ingots, in particular, with diameters of approximately 75 mm and greater, can be produced by zone pulling with an oxygen content comparable to crucible-pulled material if a flat quartz element is brought into contact with the molten cap during the pulling operation. A quartz ring which is arranged concentrically beneath the induction heating coil and can be lowered from a rest position into its working position on the molten cap is suitable as a flat element. The ingot material obtained in this manner and also the silicon wafers produced therefrom combine the purity advantages of zone-pulled silicon with the beneficial gettering and hardening action of the incorporated oxygen which otherwise distinguishes only crucible-pulled silicon.

摘要翻译： 如果在牵引操作期间平坦的石英元件与熔融盖接触，则可以通过具有与坩埚拉动材料相当的氧含量的区域拉伸来生产直径大约为75mm或更大的硅锭。 同心地设置在感应加热线圈下方并且可以从静止位置降低到其熔融帽上的工作位置的石英环适合作为平坦元件。 以这种方式获得的锭材料以及由此产生的硅晶片将区域拉硅的纯度优点与引入的氧的有益的吸气和硬化作用相结合，否则仅区分坩埚拉硅。

公开(公告)号：US4035154A

公开(公告)日：1977-07-12

申请号：US559014

申请日：1975-03-17

申请人： Gunter Raab ,  Klaus Zeuch

发明人： Gunter Raab ,  Klaus Zeuch

IPC分类号： C22B58/00 ,  B01J3/04 ,  C01B25/06 ,  C01G15/00 ,  C30B13/00 ,  C30B13/08 ,  C30B29/40 ,  B01D9/00 ,  B01J17/08

CPC分类号： C01B25/06 ,  B01J3/04 ,  C01G15/00

摘要： An apparatus for preparing a semiconductor compound, having one compound with a substantially higher vapor pressure than the other using a closed horizontal tube disposed in a pressure vessel. The two ends of the tube are located in respective heating ovens having their ends facing away from the tube closed. The heating ovens and tube are disposed within a pressure vessel with the heating ovens having an outside diameter which is considerably smaller than the inside diameter of the pressure vessel and with the total length of the heating ovens arranged one behind the other in the axial direction of the tube substantially smaller than the length of the pressure vessel. In addition, a portion of the tube located between the ovens has associated therewith a separate cooling device.

摘要翻译： 一种制备半导体化合物的装置，其具有使用设置在压力容器中的封闭水平管，具有比另一种更高的蒸气压的化合物。 管的两端位于各自的加热炉中，其加热炉的端部背离管子封闭。 加热炉和管设置在压力容器内，加热炉的外径比压力容器的内径小得多，加热炉的总长度在轴向方向上一个接一个地排列 该管显着地小于压力容器的长度。 此外，位于炉之间的管的一部分与其分开一个单独的冷却装置。

公开(公告)号：US3996094A

公开(公告)日：1976-12-07

申请号：US537981

申请日：1975-01-02

申请人： I. Arnold Lesk

发明人： I. Arnold Lesk

IPC分类号： C30B13/08 ,  C30B13/24 ,  C30B15/00 ,  C30B15/02 ,  C30B15/24 ,  C30B29/64 ,  B01J17/18 ,  B01J17/08

CPC分类号： C30B15/24 ,  C30B13/08 ,  C30B13/24 ,  C30B15/00 ,  C30B15/02 ,  C30B29/60

摘要： A method of producing monocrystalline semiconductor material in web form which provides the steps of providing a web of polycrystalline semiconductor material having a width which is much greater than its thickness, providing a monocrystalline semiconductor material seed having the same relative dimensions as the polycrystalline material source, providing one or more semiconductor material shaping members, contacting the source, the seed and the shaping member and heating the interface therebetween preferentially to produce a molten zone, moving said monocrystalline semiconductor material seed away from said molten zone as monocrystalline semiconductor material is formed thereon.

摘要翻译： 一种以网状形成单晶半导体材料的方法，其提供了提供宽度远大于其厚度的多晶半导体材料的网状物的步骤，提供具有与多晶材料源相同的相对尺寸的单晶半导体材料种子， 提供一个或多个半导体材料成形构件，使源，种子和成形构件接触并且优先地加热它们之间的界面，以产生熔融区，使单晶半导体材料种子远离所述熔融区移动，作为其上形成的单晶半导体材料。

公开(公告)号：US3224844A

公开(公告)日：1965-12-21

申请号：US17620462

申请日：1962-02-28

申请人： PHILIPS CORP

发明人： JAKOB GERTHSEN PETER

IPC分类号： C30B13/08 ,  C30B13/22

CPC分类号： C30B13/22 ,  C30B13/08 ,  Y10S117/905 ,  Y10S117/906 ,  Y10S117/918 ,  Y10T117/1088

公开(公告)号：US2175606A

公开(公告)日：1939-10-10

申请号：US2175606D

IPC分类号： B23K9/032 ,  B23P25/00 ,  B23Q35/10 ,  C30B13/08

CPC分类号： C30B13/08 ,  B23K9/032 ,  B23P25/00 ,  B23Q35/102

公开(公告)号：US11326270B2

公开(公告)日：2022-05-10

申请号：US16303297

申请日：2018-03-29

申请人： Crystal Systems Corporation

发明人： Isamu Shindo

IPC分类号： C30B13/08 ,  C30B13/28 ,  C30B13/14 ,  C30B13/24

摘要： A single-crystal production equipment which includes, at least: a raw material supply apparatus which supplies a granular raw material to a melting apparatus positioned therebelow; the melting apparatus heats and melts the granular raw material to generate a raw material melt and supplies the raw material melt into a single-crystal production crucible positioned therebelow; and a crystallization apparatus which includes the single-crystal production crucible in which a seed single crystal is placed on the bottom, and a first infrared ray irradiation equipment which irradiates an infrared ray to the upper surface of the seed single crystal in the single-crystal production crucible, and the single-crystal production equipment is configured such that the raw material melt is dropped into a melt formed by irradiating the upper surface of the seed single crystal with the infrared ray, and a single crystal is allowed to precipitate out of the thus formed mixed melt.

公开(公告)号：US20160348270A1

公开(公告)日：2016-12-01

申请号：US15116532

申请日：2014-10-08

申请人： HITACHI, LTD.

发明人： Takayuki KANDA ,  Shinya KOMINAMI ,  Yuichiro UENO ,  Takafumi ISHITSU ,  Tomoyuki SEINO ,  Isao TAKAHASHI

IPC分类号： C30B13/08 ,  C01G15/00 ,  C30B29/46 ,  C30B13/14 ,  C30B13/16

CPC分类号： C30B13/08 ,  C01G15/00 ,  C30B11/00 ,  C30B11/002 ,  C30B11/007 ,  C30B13/14 ,  C30B13/16 ,  C30B29/12 ,  C30B29/42 ,  C30B29/46 ,  C30B29/48 ,  C30B35/002 ,  C30B35/007

摘要： A crucible provided with a holding section (12) for holding a raw material (20), an initial distillate recovery section (14) for recovering an initial distillate (24) when the raw material (20) held in the holding section (12) has been vaporized, a main distillate condensing section (16) for condensing a main distillate when the raw material (20) held in the holding section (12) has been vaporized, and a crystal growing section (18) for holding the main distillate (30) comprising a raw material melt (28) condensed by the main distillate condensing section (16) and producing crystals when crystals are grown from the held main distillate (30) is used as a crucible (10) for crystal growth used to grow crystals. This makes it possible to raise the efficiency of manufacturing crystals while achieving high purification of a raw material for semiconductor crystals.

摘要翻译： 一种具有用于容纳原料的保持部（12）的坩埚，当保持在保持部（12）中的原料（20）时，用于回收初馏体（24）的初馏点回收部（14） 被蒸发的主蒸馏冷凝部分（16），用于当保持在保持部分（12）中的原料（20）已经蒸发时冷凝主馏分;以及晶体生长部分（18），用于保持主馏出物 30）包括由主馏出物冷凝部（16）冷凝的原料熔体（28），并且当从保持的主馏出物（30）生长晶体时产生晶体，作为晶体生长用的坩埚（10），用于生长晶体 。 这使得可以提高制造晶体的效率，同时实现半导体晶体的原料的高纯化。

公开(公告)号：US09410262B2

公开(公告)日：2016-08-09

申请号：US13969818

申请日：2013-08-19

申请人： Siltronic AG

发明人： Josef Lobmeyer ,  Georg Brenninger ,  Waldemar Stein

IPC分类号： C30B13/08 ,  C30B13/20 ,  C30B29/06 ,  C30B13/10

CPC分类号： C30B13/20 ,  C30B13/08 ,  C30B13/10 ,  C30B29/06

摘要： A silicon single crystal is produced by a method wherein a silicon plate is inductively heated; granular silicon is melted on the silicon plate; and the molten silicon thus produced flows through a flow conduit in the center of the plate to a phase boundary at which a silicon single crystal crystallizes, wherein a silicon ring having a lower resistivity than the plate, and lying on the plate, is inductively heated prior to inductively heating the plate, and melting the ring.

摘要翻译： 通过以下方法制造硅单晶：其中硅板被感应加热; 颗粒状硅在硅板上熔化; 并且由此产生的熔融硅流过板的中心的流动管道到硅单晶结晶的相界面，其中具有比该板电阻率低的硅并且位于板上的硅环被感应加热 然后感应加热板，并使环熔化。

公开(公告)号：US06932865B2

公开(公告)日：2005-08-23

申请号：US10412379

申请日：2003-04-11

申请人： Craig A. Brice

发明人： Craig A. Brice

IPC分类号： C30B11/00 ,  C30B13/00 ,  C30B13/24 ,  C30B13/08

CPC分类号： C30B11/00 ,  B22F3/1055 ,  B22F2999/00 ,  C30B13/00 ,  C30B13/24 ,  C30B29/52 ,  Y02P10/295 ,  B22F2207/15

摘要： A single-crystal structure is grown using free-form fabrication through principles of directional solidification and direct-deposition techniques. The structure is formed from a metallic alloy by building from feedstock on top of and upward from a heated base element. The top of the structure is also heated with a scanning beam as it is built. The higher temperatures near the melting alloy tend to promote crystal growth rather than nucleation as the grain grows toward the heat of the scanning beam. This allows a two-dimensional thermal gradient to be formed in the build direction, which allows the solid crystal to maintain one orientation during the deposition process. As the material initially solidifies, it nucleates off of a desired grain that is designated by a grain selector. This method eliminates the need for expensive mold cavities and segmented furnaces that are typically required by prior art processes for producing some components.

摘要翻译： 通过定向凝固和直接沉积技术的原理，使用自由形式的制造生长单晶结构。 该结构由金属合金形成，通过从加热的基体元件顶部和上方的原料构建。 结构的顶部也随着扫描梁而被加热。 熔融合金附近的较高温度随着晶粒向扫描光束的热量的增长而倾向于促进晶体生长而不是成核。 这允许在构建方向上形成二维热梯度，这允许在沉积过程中固体晶体保持一个取向。 当材料最初凝固时，它由晶粒选择器指定的期望晶粒成核。 该方法消除了对用于生产一些部件的现有技术方法通常需要的昂贵的模腔和分段炉的需要。