公开(公告)号：US20180087186A1

公开(公告)日：2018-03-29

申请号：US15352048

申请日：2016-11-15

Applicant: NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： CHENG-JUNG KO ,  DAI-LIANG MA ,  BO-CHENG LIN ,  HSUEH-I CHEN ,  BANG-YING YU ,  SHU-YU YEH

IPC: C30B29/36 ,  C30B23/02 ,  C01B31/36

CPC classification number: C30B29/36 ,  C01B32/956 ,  C01B32/963 ,  C04B35/56 ,  C04B35/573 ,  C04B35/65 ,  C30B23/02

Abstract: A method of producing a carbide raw material includes the steps of (A) providing a porous carbon material and a high-purity silicon raw material or a metal raw material and applying the porous carbon material and the high-purity silicon raw material or a metal raw material alternately to form a layer structure; (B) putting the layer structure in a synthesis furnace to undergo a gas evacuation process; and (C) producing a carbide raw material with a synthesis reaction which the layer structure undergoes in an inert gas atmosphere, wherein the carbide raw material is a carbide powder of a particle diameter of less than 300 μm, thereby preventing secondary raw material contamination otherwise arising from comminution, oxidation and acid rinsing.

公开(公告)号：US20180057925A1

公开(公告)日：2018-03-01

申请号：US15353000

申请日：2016-11-16

Applicant: NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： DAI-LIANG MA ,  HSUEH-I CHEN ,  BO-CHENG LIN ,  CHENG-JUNG KO ,  YING-CONG ZHAO ,  CHIH-WEI KUO ,  SHU-YU YEH

IPC: C23C14/24 ,  C30B23/02 ,  C30B23/06 ,  C30B29/36 ,  C30B29/40 ,  C23C14/06 ,  C23C14/26

CPC classification number: C23C14/243 ,  C23C14/0635 ,  C23C14/0641 ,  C23C14/26 ,  C30B23/00 ,  C30B23/002 ,  C30B23/025 ,  C30B23/06 ,  C30B23/066 ,  C30B29/36 ,  C30B29/403

Abstract: A device for growing large-sized monocrystalline crystals, including a crucible adapted to grow crystals from a material source and with a seed crystal and including therein a seed crystal region, a growth chamber, and a material source region; a thermally insulating material disposed outside the crucible and below a heat dissipation component; and a plurality of heating components disposed outside the thermally insulating material to provide heat sources, wherein the heat dissipation component is of a heat dissipation inner diameter and a heat dissipation height which exceeds a thickness of the thermally insulating material.

公开(公告)号：US20170159206A1

公开(公告)日：2017-06-08

申请号：US14961963

申请日：2015-12-08

Applicant: NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： TA-CHING LI ,  DAI-LIANG MA ,  BANG-YING YU ,  BO-CHENG LIN

IPC: C30B23/02 ,  C30B29/36 ,  C30B23/00

CPC classification number: C30B23/025 ,  C30B29/36

Abstract: A method of making a photonic crystal includes step 1 providing a seed, followed by etching a surface of the seed to form thereon submicron voids; step 2 providing a graphite disk, followed by coating a side of the graphite disk with a graphite adhesive whereby the void-formed surface of the seed is attached to the graphite disk to form a seed holder; step 3 placing the seed holder above a growth chamber, followed by placing a raw material below the growth chamber; step 4 forming a thermal field in the growth chamber with a heating device to sublime the raw material; and step 5 controlling temperature, thermal field, atmosphere and pressure in the growth chamber to allow the gaseous raw material to be conveyed and deposited on the seed, thereby forming a photonic crystal.