公开(公告)号：US20230200261A1

公开(公告)日：2023-06-22

申请号：US18071173

申请日：2022-11-29

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Shota Iizuka ,  Takahiro Mori ,  Kimihiko Kato ,  Atsushi Yagishita ,  Tetsuya Ueda

IPC: H10N60/80 ,  H10N60/10 ,  H10N69/00

CPC classification number: H10N60/80 ,  H10N60/11 ,  H10N60/128 ,  H10N69/00

Abstract: The invention provides a spin qubit-type semiconductor device capable of achieving both high-speed spin manipulation and high integration, and an integrated circuit for the spin qubit-type semiconductor device. The spin qubit-type semiconductor device includes a body comprised of at least one of a semiconductor layer itself formed with a quantum dot and a structural portion arranged around the semiconductor layer, a gate electrode arranged at a position on the semiconductor layer, which faces the quantum dot, at least one micro magnet wholly or partly embedded in the body so that a first position condition in which the micro magnet is at a position near the quantum dot, a second position condition in which the position of a lower end of the micro magnet is located below the gate electrode, and a third position condition in which when viewed from above the body, the micro magnet is arranged at a position having no rotational symmetry with the quantum dot as the center of rotation are satisfied, and a static magnetic field applying unit capable of applying a static magnetic field to the quantum dot and the micro magnet.

公开(公告)号：US20230180633A1

公开(公告)日：2023-06-08

申请号：US17924037

申请日：2021-04-14

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Takahiro Mori ,  Atsushi Yagishita

IPC: H10N60/10 ,  H10N60/01

CPC classification number: H10N60/128 ,  H10N60/11 ,  H10N60/01

Abstract: To suppress a leakage current caused by a gate of a tunnel field effect transistor included in a silicon spin quantum bit device, the silicon spin quantum bit device is provided including a tunnel field effect transistor having a gate, a source, and a drain, a quantum gate operation mechanism for spin control, which is provided under the tunnel field effect transistor, and an inter-qubit coupler for coupling a channel of the tunnel field effect transistor with a channel of a tunnel field effect transistor included in another quantum bit device. Further, the gate is made wider in width than the channel and is partly formed on the inter-qubit coupler.