公开(公告)号：US20240186404A1

公开(公告)日：2024-06-06

申请号：US18553693

申请日：2022-03-04

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Kimihiko Kato ,  Takahiro Mori ,  Shota Iizuka ,  Takashi Nakayama ,  Sanghun Cho ,  Jyurai Kato

IPC: H01L29/739 ,  H01L29/161 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L29/7391 ,  H01L29/161 ,  H01L29/66356 ,  H01L29/786

Abstract: An object of the present invention is to provide a semiconductor element capable of being manufactured in small size, easily and at a low cost and obtaining a large on-current, a semiconductor integrated circuit, and a production method for the semiconductor element.
A semiconductor element 10 has an element structure of a tunnel field-effect transistor. A channel part 13 formed of an indirect transition-type semiconductor is formed as a plate-like shaped portion having one end connected to a source part 14 and the other end connected to a drain part 15. Of two pairs of opposing surfaces of first opposing surfaces and second opposing surfaces which constitute the channel part 13 and are opposed in a direction perpendicular to the direction in which a current flows from the source part 14 to the drain part 15, at least one pair of the opposing surfaces selected from the two pairs is formed by arranging at a facing interval of 15 nm at the longest between the opposing surfaces, electron confinement surfaces in which a band structure of a direct transition-type semiconductor is capable of being simulatively given to the indirect transition-type semiconductor by regulation of electron motion.

公开(公告)号：US20230200261A1

公开(公告)日：2023-06-22

申请号：US18071173

申请日：2022-11-29

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Shota Iizuka ,  Takahiro Mori ,  Kimihiko Kato ,  Atsushi Yagishita ,  Tetsuya Ueda

IPC: H10N60/80 ,  H10N60/10 ,  H10N69/00

CPC classification number: H10N60/80 ,  H10N60/11 ,  H10N60/128 ,  H10N69/00

Abstract: The invention provides a spin qubit-type semiconductor device capable of achieving both high-speed spin manipulation and high integration, and an integrated circuit for the spin qubit-type semiconductor device. The spin qubit-type semiconductor device includes a body comprised of at least one of a semiconductor layer itself formed with a quantum dot and a structural portion arranged around the semiconductor layer, a gate electrode arranged at a position on the semiconductor layer, which faces the quantum dot, at least one micro magnet wholly or partly embedded in the body so that a first position condition in which the micro magnet is at a position near the quantum dot, a second position condition in which the position of a lower end of the micro magnet is located below the gate electrode, and a third position condition in which when viewed from above the body, the micro magnet is arranged at a position having no rotational symmetry with the quantum dot as the center of rotation are satisfied, and a static magnetic field applying unit capable of applying a static magnetic field to the quantum dot and the micro magnet.