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公开(公告)号：US20210013316A1
公开(公告)日：2021-01-14
申请号：US16982924
申请日：2019-03-22
发明人： Hidehiro Asai , Takahiro Mori
IPC分类号： H01L29/423 , H01L29/786 , H01L29/66
摘要： [Problem] To improve the drain current ON/OFF ratio characteristics.
[Solution] A tunnel field-effect transistor 10 of the present invention is such that, when the gate length is denoted by LG and the extension distance of a source region 1 extended toward a drain region 3 from a position in the source region 1 is denoted by LOV, LTG expressed in Formula (1) below as the shortest distance between the position of an extension end of the source region 1 based on a drain-side reference position as the side face position of a gate electrode 6a, 6b closest to the drain region 3, and the position in the semiconductor layer 4 opposite to the drain-side reference position in the height direction of the gate electrode 6a, 6b satisfies a condition of Inequality (2) below. Note that lt_OFF in Inequality (2) denotes a shortest tunnel distance over which carriers move from the source region to a channel region through a tunnel junction surface in an OFF state of the tunnel field-effect transistor.-
2.发明授权公开(公告)号：US10361193B2
公开(公告)日：2019-07-23
申请号：US15125263
申请日：2015-02-20
发明人： Takahiro Mori
IPC分类号： H01L27/088 , H01L21/265 , H01L29/417 , H01L27/12 , H01L21/8234 , H01L21/84
摘要： The present invention provides an integrated circuit formed of tunneling field-effect transistors that includes a first tunneling field-effect transistor in which one of a first P-type region and a first N-type region operates as a source region and the other one operates as a drain region; and a second tunneling field-effect transistor in which one of a second P-type region and a second N-type region operates as a source region and the other one operates as a drain region, the first and second tunneling field-effect transistors being formed in one active region to have the same polarity, the first P-type region and the second N-type region being formed adjacently, the adjacent first P-type region and second N-type region being electrically connected through metal semiconductor alloy film.
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公开(公告)号：US20220222564A1
公开(公告)日：2022-07-14
申请号：US17603517
申请日：2020-04-14
摘要： The present invention addresses the problem of providing a quantum bit cell and a quantum bit integrated circuit having an easy-to-integrate structure. The quantum bit cell of the present invention including a spin torque oscillator capable of emitting a microwave with a propagation distance of 1 μm or less and having a maximum diameter of 1 μm or less, and a solid-state element quantum bit arranged near the spin torque oscillator at an interval of the propagation distance or less, where a quantum two-level system is controlled by the microwave.
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公开(公告)号：US11233131B2
公开(公告)日：2022-01-25
申请号：US16982924
申请日：2019-03-22
发明人： Hidehiro Asai , Takahiro Mori
IPC分类号： H01L29/423 , H01L29/786 , H01L29/66 , H01L29/08
摘要： [Problem] To improve the drain current ON/OFF ratio characteristics.
[Solution] A tunnel field-effect transistor 10 of the present invention is such that, when the gate length is denoted by LG and the extension distance of a source region 1 extended toward a drain region 3 from a position in the source region 1 is denoted by LOV, LTG expressed in Formula (1) below as the shortest distance between the position of an extension end of the source region 1 based on a drain-side reference position as the side face position of a gate electrode 6a, 6b closest to the drain region 3, and the position in the semiconductor layer 4 opposite to the drain-side reference position in the height direction of the gate electrode 6a, 6b satisfies a condition of Inequality (2) below. Note that lt_OFF in Inequality (2) denotes a shortest tunnel distance over which carriers move from the source region to a channel region through a tunnel junction surface in an OFF state of the tunnel field-effect transistor.-
5.发明授权公开(公告)号：US09711597B2
公开(公告)日：2017-07-18
申请号：US14915546
申请日：2014-07-30
发明人： Takahiro Mori
IPC分类号： H01L33/42 , H01L29/10 , H01L29/739 , H01L21/02 , H01L29/161 , H01L29/167 , H01L29/66 , H01L29/78
CPC分类号： H01L29/1033 , H01L21/02532 , H01L29/161 , H01L29/167 , H01L29/66568 , H01L29/7391 , H01L29/78
摘要： The present invention provides a semiconductor element that can be manufactured easily at a low cost, can obtain a high tunneling current, and has an excellent operating characteristic, a method for manufacturing the same, and a semiconductor integrated circuit including the semiconductor element. The semiconductor element of the present invention is characterized in that the whole or a part of a tunnel junction is constituted by a semiconductor region made of an indirect-transition semiconductor containing isoelectronic-trap-forming impurities.
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