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公开(公告)号：US09224460B2
公开(公告)日：2015-12-29
申请号：US13923447
申请日：2013-06-21
Inventor： Junji Tominaga , James Paul Fons , Alexander Kolobov
CPC classification number: G11C13/0004 , B82Y10/00 , G11B7/2433 , G11B2007/24314 , G11B2007/24316 , H01L29/15 , H01L29/18 , H01L45/06 , H01L45/144 , H01L45/1625
Abstract: Recording and erasing of data in PRAM have hitherto been performed based on a change in physical characteristics caused by primary phase-transformation of a crystalline state and an amorphous state of a chalcogen compound including Te which serves as a recording material. Since, however, a recording thin film is formed of a polycrystal but not a single crystal, a variation in resistance values occurs and a change in volume caused upon phase-transition has placed a limit on the number of times of readout of the record. In one embodiment, the above problem is solved by preparing a solid memory having a superlattice structure with a thin film containing Sb and a thin film containing Te. The solid memory can realize the number of times of repeated recording and erasing of 1015.
Abstract translation: 迄今为止，基于由作为记录材料的包含Te的硫属化合物的结晶状态和非晶状态的初相相变引起的物理特性的变化，已经进行了PRAM中的数据的记录和擦除。 然而，由于记录薄膜由多晶而不是单晶形成，所以发生电阻值的变化，并且相变所导致的体积变化对记录的读出次数设定了限制。 在一个实施方案中，通过制备具有含有Sb的薄膜和含有Te的薄膜的超晶格结构的固体存储器来解决上述问题。 固态存储器可以实现1015次重复记录和擦除次数。
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公开(公告)号：US09153315B2
公开(公告)日：2015-10-06
申请号：US13923454
申请日：2013-06-21
Inventor： Junji Tominaga , James Paul Fons , Alexander Kolobov
CPC classification number: G11C13/0009 , B82Y10/00 , G11B7/2433 , G11B2007/24312 , G11B2007/24314 , G11B2007/24316 , H01L29/15 , H01L29/18 , H01L45/06 , H01L45/144 , H01L45/1625
Abstract: Recording and erasing of data in PRAM have hitherto been performed based on a change in physical characteristics caused by primary phase-transformation of a crystalline state and an amorphous state of a chalcogen compound including Te which serves as a recording material. Since, however, a recording thin film is formed of a polycrystal but not a single crystal, a variation in resistance values occurs and a change in volume caused upon phase-transition has placed a limit on the number of times of readout of record. In one embodiment, the above problem is solved by preparing a solid memory having a superlattice structure of thin films including Ge and thin films including Sb. The solid memory can realize the number of times of repeated recording and erasing of 1015.
Abstract translation: 迄今为止，基于由作为记录材料的包含Te的硫属化合物的结晶状态和非晶状态的初相相变引起的物理特性的变化，已经进行了PRAM中的数据的记录和擦除。 然而，由于记录薄膜由多晶而不是单晶形成，所以发生电阻值的变化，并且由相变引起的体积变化对记录的读出次数设定了限制。 在一个实施例中，通过制备具有包括Ge的薄膜和包括Sb的薄膜的超晶格结构的固体存储器来解决上述问题。 固态存储器可以实现1015次重复记录和擦除次数。
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公开(公告)号：US20130286725A1
公开(公告)日：2013-10-31
申请号：US13923447
申请日：2013-06-21
Inventor： Junji Tominaga , James Paul Fons , Alexander Kolobov
IPC: G11C13/00
CPC classification number: G11C13/0004 , B82Y10/00 , G11B7/2433 , G11B2007/24314 , G11B2007/24316 , H01L29/15 , H01L29/18 , H01L45/06 , H01L45/144 , H01L45/1625
Abstract: Recording and erasing of data in PRAM have hitherto been performed based on a change in physical characteristics caused by primary phase-transformation of a crystalline state and an amorphous state of a chalcogen compound including Te which serves as a recording material. Since, however, a recording thin film is formed of a polycrystal but not a single crystal, a variation in resistance values occurs and a change in volume caused upon phase-transition has placed a limit on the number of times of readout of the record. In one embodiment, the above problem is solved by preparing a solid memory having a superlattice structure with a thin film containing Sb and a thin film containing Te. The solid memory can realize the number of times of repeated recording and erasing of 1015.
Abstract translation: 迄今为止，基于由作为记录材料的包含Te的硫属化合物的结晶状态和非晶状态的初相相变引起的物理特性的变化，已经进行了PRAM中的数据的记录和擦除。 然而，由于记录薄膜由多晶而不是单晶形成，所以发生电阻值的变化，并且相变所导致的体积变化对记录的读出次数设定了限制。 在一个实施方案中，通过制备具有含有Sb的薄膜和含有Te的薄膜的超晶格结构的固体存储器来解决上述问题。 固态存储器可以实现1015次重复记录和擦除次数。
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