公开(公告)号：US3645695A

公开(公告)日：1972-02-29

申请号：US3645695D

申请日：1969-10-14

Applicant: NCR CO

Inventor： KOEPP RONALD L ,  DUDKOWSKI STANLEY J

IPC: H01L21/22 ,  F27D11/02 ,  H01L21/205 ,  H01L21/31 ,  H05B3/00 ,  B01J1/00 ,  C23C11/00

CPC classification number: F27D11/02 ,  H05B3/0014 ,  Y10S148/006 ,  Y10S148/053 ,  Y10S148/118

Abstract: The present invention relates to a processing apparatus for growing and annealing a silicon dioxide insulator layer to obtain a mobile positive ion free silicon dioxide insulator layer. A mobile positive ion free silicon dioxide insulator layer is required in order to make a stable insulated gate field effect transistor. The processing apparatus comprises a nonoxidizing high-melting-point platinum metal film coated quartz furnace tube, potential means for placing a positive potential upon the platinum metal film coating of the platinum metal film coated quartz furnace tube to repel mobile ions therefrom, heater means for heating the interior of the quartz furnace tube, and gas means for passing oxygen gas through the platinum metal film coated quartz furnace tube. A silicon wafer may be oxidized in said processing apparatus to form a relatively mobile positive ion free silicon dioxide insulator layer of an insulated gate field effect transistor upon the silicon wafer. The silicon dioxide insulator layer is relatively uncontaminated by mobile positive ions which exist to the outside of the platinum metal film coated quartz furnace tube. A silicon wafer which previously has been coated by a silicon dioxide insulator layer may be processed to remove mobile ions within the silicon dioxide insulator layer. Mobile positive ions are repelled by the positive potential applied to the platinum metal film away from the outside of the quartz furnace tube, and mobile positive ions of the silicon dioxide insulator layer within the platinum metal film coated quartz tube are removed by the flowing oxygen gas due to the low-vapor pressure of the mobile positive ions.

Abstract translation: 本发明涉及一种用于生长和退火二氧化硅绝缘体层以获得可移动的无离子的二氧化硅绝缘体层的处理装置。 为了形成稳定的绝缘栅场效应晶体管，需要一个可移动的无离子的二氧化硅绝缘体层。 处理装置包括非氧化高熔点铂金属膜涂覆的石英炉管，用于在铂金属膜涂覆的石英炉管的铂金属膜涂覆上放置正电位以排斥其上的可移动离子的潜在装置，用于 加热石英炉管的内部和用于使氧气通过铂金属膜涂覆的石英炉管的气体装置。 在所述处理装置中可以氧化硅晶片，以在硅晶片上形成绝缘栅场效应晶体管的相对移动的无离子的无离子二氧化硅绝缘体层。 二氧化硅绝缘体层通过存在于铂金属膜涂覆的石英炉管的外部的移动正离子相对未受污染。 先前已经被二氧化硅绝缘体层涂覆的硅晶片可以被处理以除去二氧化硅绝缘体层内的可移动离子。 移动正离子被施加到铂金属膜远离石英炉管的外部的正电位排斥，并且铂金属膜涂覆的石英管内的二氧化硅绝缘体层的移动正离子被流动的氧气 由于移动正离子的低蒸气压。

公开(公告)号：US3636385A

公开(公告)日：1972-01-18

申请号：US3636385D

申请日：1970-02-13

Applicant: NCR CO

Inventor： KOEPP RONALD L

IPC: H01L27/06 ,  H03F1/42 ,  H03F1/52 ,  H03F3/34 ,  H03F3/347 ,  H03K17/60

CPC classification number: H03F1/523

Abstract: A protection circuit is disclosed for protecting a P-channel enhancement-type metal oxide semiconductor transistor from rupturing due to static voltage building up between its gate and source electrodes. The protection circuit includes at least one N-channel depletion-type transistor having its drain and source electrodes connected between the gate and source electrodes of the enhancement-type transistor and its gate electrode coupled to a negative power supply terminal. A resistor is also included between the gate of the enhancement-type transistor and the terminal to which an input signal is applied. There is also included a diode, in shunt with the resistor and the depletiontype transistor, which is poled to be reverse biased by the input signal.

公开(公告)号：US3663277A

公开(公告)日：1972-05-16

申请号：US3663277D

申请日：1969-08-04

Applicant: NCR CO

Inventor： KOEPP RONALD L ,  HAVAS JANOS

IPC: H05K3/46 ,  H01B3/12 ,  H01L21/316 ,  H01L21/768 ,  B44D1/02 ,  C23D5/02 ,  H01J1/13

CPC classification number: H01L21/316 ,  Y10S148/02 ,  Y10S148/043 ,  Y10S148/118

Abstract: The present invention relates to a method of forming a thin stratified pinhole-free silicon dioxide insulator layer between multilevel conductors. Silicon dioxide films within the stratified pinhole-free silicon dioxide insulator layer are made from single drops of colloidal silicon dioxide liquid dispersion. These silicon dioxide films are stacked to form a stratified pinhole-free highly insulative silicon dioxide layer between the upper and lower conductors. The thinness of the stratified pinhole-free silicon dioxide insulator layer allows shallow contact windows to be formed therein. A shallow contact window allows reliable electrical contact therethrough between an upper conductor and a lower conductor.

Abstract translation: 本发明涉及一种在多层导体之间形成薄层无针孔二氧化硅绝缘体层的方法。 分层无针孔二氧化硅绝缘体层内的二氧化硅膜由一滴胶体二氧化硅液体分散体制成。 堆叠这些二氧化硅膜以在上导体和下导体之间形成分层的无针孔高绝缘二氧化硅层。 分层的无针孔二氧化硅绝缘体层的薄度允许在其中形成浅接触窗口。 浅接触窗口允许在上导体和下导体之间通过其可靠的电接触。