公开(公告)号：US3560279A

公开(公告)日：1971-02-02

申请号：US3560279D

申请日：1968-11-05

Applicant: NCR CO

Inventor： HAVAS JANOS

IPC: H01L21/225 ,  H01L7/34

CPC classification number: H01L21/2255

Abstract: THE PRESENT INVENTION RELATES TO A METHOD OF FORMING A P-N JUNCTION IN A SEMICONDUCTOR MATERIAL WHEREIN THE REGION ON ONE SIDE OF SAID P-N JUNCTION HAS A DESIRED LOW DOPANT CONCENTRATION AND WHEREIN SAID REGION IS FORMED BY DOPING SAID SEMICONDUCTOR MATERIAL FROM A SILICON DIOXIDE LAYER MADE FROM A COLLOIDAL SILICON DIOXIDELIQUID-DISPERSION CONTAINING BORON IMPURITY ATOMS AND COUNTERDOPANT ATOMS.

公开(公告)号：US3663277A

公开(公告)日：1972-05-16

申请号：US3663277D

申请日：1969-08-04

Applicant: NCR CO

Inventor： KOEPP RONALD L ,  HAVAS JANOS

IPC: H05K3/46 ,  H01B3/12 ,  H01L21/316 ,  H01L21/768 ,  B44D1/02 ,  C23D5/02 ,  H01J1/13

CPC classification number: H01L21/316 ,  Y10S148/02 ,  Y10S148/043 ,  Y10S148/118

Abstract: The present invention relates to a method of forming a thin stratified pinhole-free silicon dioxide insulator layer between multilevel conductors. Silicon dioxide films within the stratified pinhole-free silicon dioxide insulator layer are made from single drops of colloidal silicon dioxide liquid dispersion. These silicon dioxide films are stacked to form a stratified pinhole-free highly insulative silicon dioxide layer between the upper and lower conductors. The thinness of the stratified pinhole-free silicon dioxide insulator layer allows shallow contact windows to be formed therein. A shallow contact window allows reliable electrical contact therethrough between an upper conductor and a lower conductor.

Abstract translation: 本发明涉及一种在多层导体之间形成薄层无针孔二氧化硅绝缘体层的方法。 分层无针孔二氧化硅绝缘体层内的二氧化硅膜由一滴胶体二氧化硅液体分散体制成。 堆叠这些二氧化硅膜以在上导体和下导体之间形成分层的无针孔高绝缘二氧化硅层。 分层的无针孔二氧化硅绝缘体层的薄度允许在其中形成浅接触窗口。 浅接触窗口允许在上导体和下导体之间通过其可靠的电接触。