公开(公告)号：US20020036742A1

公开(公告)日：2002-03-28

申请号：US09965566

申请日：2001-09-27

Applicant: NEC Corporation

Inventor： Shigeru Kimura ,  Hiroaki Tanaka ,  Akira Fujita ,  Kiyofumi Kudou ,  Takahiko Watanabe ,  Hiroyuki Uchida ,  Akitoshi Maeda

IPC: G02F001/1343

CPC classification number: G02F1/134363 ,  G02F1/1345

Abstract: An active matrix LCD device includes a TFT panel, a counter panel and liquid crystal interposed therebetween. The TFT panel includes a plurality of scanning lines and a plurality of common lines formed in one layer and extending in a row direction, and a plurality of signal lines extending in a column direction. A coupling line for coupling the common lines together is disposed outside the pixel array of the TFT panel, such as in a TCP mounted on the TFT panel and mounting thereon a driver IC for driving the scanning lines.

Abstract translation: 有源矩阵LCD装置包括TFT面板，对面板和插入其间的液晶。 TFT面板包括形成在一个层中并沿行方向延伸的多条扫描线和多条公共线，以及沿列方向延伸的多条信号线。 用于将公共线连接在一起的耦合线设置在TFT面板的像素阵列的外部，诸如安装在TFT面板上的TCP中，并且安装用于驱动扫描线的驱动器IC。

公开(公告)号：US20020085157A1

公开(公告)日：2002-07-04

申请号：US10028778

申请日：2001-12-28

Applicant: NEC CORPORATION

Inventor： Hiroaki Tanaka ,  Akira Fujita ,  Shigeru Kimura ,  Akitoshi Maeda ,  Takasuke Hayase

IPC: G02F001/1343

CPC classification number: H01L29/4908 ,  G02F1/13458 ,  G02F1/136286 ,  G02F2001/13629 ,  G02F2001/136295 ,  H01L29/458

Abstract: An active matrix addressing LCD device having an active matrix substrate on which conductive lines are formed is provided, which suppress the Al hillock without complicating the structure of the lines and which decreases the electrical connection resistance increase at the terminals of the lines, thereby improving the connection reliability. The device comprises an active matrix substrate having a transparent, dielectric plate, thin-film transistors (TFTs) arranged on the plate, and pixel electrodes arranged on the plate. Gate electrodes of the TFTs and scan lines have a first multilevel conductive structure. Common electrodes and common lines may have the first multilevel conductive structure. Source and drain electrodes of the TFTs and signal lines may have a second multilevel conductive structure. Each of the first and second multilevel conductive structures includes a three-level TiN/Ti/Al or TiN/Al/Ti structure or a four-level TiN/Ti/Al/Ti structure. Each of the TiN film of the first and second structures has a nitrogen concentration of 25 atomic % or higher. The Al film may be replaced with an Al alloy.

Abstract translation: 提供了一种有源矩阵寻址LCD装置，其具有形成有导电线的有源矩阵基板，其抑制Al小丘而不使线路的结构复杂化，并且降低了线路端子处的电连接电阻增加，从而改善了 连接可靠性。 该器件包括具有透明电介质板，布置在板上的薄膜晶体管（TFT）和布置在板上的像素电极的有源矩阵基板。 TFT和扫描线的栅极具有第一多层导电结构。 公共电极和公共线可以具有第一多层导电结构。 TFT和信号线的源极和漏极可以具有第二多层导电结构。 第一和第二多层导电结构中的每一个包括三级TiN / Ti / Al或TiN / Al / Ti结构或四级TiN / Ti / Al / Ti结构。 第一和第二结构的TiN膜的氮浓度为25原子％以上。 Al膜可以用Al合金代替。