公开(公告)号：US20010010370A1

公开(公告)日：2001-08-02

申请号：US09745657

申请日：2000-12-20

Applicant: NEC Corporation

Inventor： Shigeru Kimura ,  Takahiko Watanabe ,  Tae Yoshikawa ,  Hiroyuki Uchida ,  Shusaku Kido ,  Shinichi Nakata ,  Tsutomu Hamada ,  Hisanobu Shimodouzono ,  Satoshi Doi ,  Toshihiko Harano ,  Akitoshi Maeda ,  Satoshi Ihida ,  Hiroaki Tanaka ,  Takasuke Hayase ,  Shouichi Kuroha ,  Hirofumi Ihara ,  Kazushige Takechi

IPC: H01L021/00 ,  H01L031/036

CPC classification number: G02F1/134363

Abstract: An active matrix substrate plate having superior properties is manufactured at high yield using four photolithographic fabrication steps. In step 1, the scanning line and the gate electrode extending from the scanning line are formed in the glass plate. In step 2, the gate insulation layer and the semiconductor layer comprised by amorphous silicon layer and nnull amorphous silicon layer is laminated to provide the semiconductor layer for the TFT section. In step 3, the transparent conductive layer and the metallic layer are laminated, and the signal line, the drain electrode extending from the signal line, the pixel electrode and the source electrode extending from the pixel electrode are formed, and the nnull amorphous silicon layer of the channel gap is removed by etching. In step 4, the protective insulation layer is formed, and the protective insulation layer and the metal layer above the pixel electrode are removed by etching.

Abstract translation: 使用四个光刻制造步骤以高产率制造具有优异性能的有源矩阵基板。 在步骤1中，在玻璃板上形成扫描线和从扫描线延伸的栅电极。 在步骤2中，层叠由非晶硅层和n +非晶硅层构成的栅极绝缘层和半导体层，为TFT部分提供半导体层。 在步骤3中，层叠透明导电层和金属层，形成信号线，从信号线延伸的漏极，从像素电极延伸的像素电极和源电极，并且n +非晶硅层 通过蚀刻去除通道间隙。 在步骤4中，形成保护绝缘层，通过蚀刻除去保护绝缘层和像素电极上方的金属层。

公开(公告)号：US20030030768A1

公开(公告)日：2003-02-13

申请号：US10205365

申请日：2002-07-26

Applicant: NEC Corporation

Inventor： Michiaki Sakamoto ,  Satoshi Ihida ,  Hidenori Ikeno ,  Masaki Shinohara ,  Shigeru Kimura ,  Kenji Morio ,  Kaazurou Saeki

IPC: G02F001/1335

CPC classification number: G02F1/133555 ,  G02F1/133504 ,  G02F1/136227 ,  G02F2001/136236

Abstract: In a transflective type LCD provided with a transparent region and a reflection region in each pixel, when an irregular film 11 is formed on an active matrix substrate 12 to form irregularities of a reflection electrode film 6, the irregular film 11 is specifically formed to almost the same film thickness in both the transparent region and the reflection region to provide substantially the same inter-substrate gap in these two regions so that they may have almost the same V-T characteristics and also the reflection electrode film 6 made of Al/Mo is formed so as to overlap with a transmission electrode film 5 made of ITO all around an outer periphery of the transmission electrode film 5 by a width of at least 2 nullm, thus suppressing electric erosion from occurring between the ITO and Al substances at the edge of the transmission electrode film 5.

Abstract translation: 在每个像素中设置有透明区域和反射区域的半透射型LCD中，当在有源矩阵基板12上形成不规则膜11以形成反射电极膜6的凹凸时，不规则膜11特别形成为几乎 在透明区域和反射区域中具有相同的膜厚度，以在这两个区域中提供基本上相同的基板间间隙，使得它们可以具有几乎相同的VT特性，并且还形成由Al / Mo制成的反射电极膜6 以便与透明电极膜5的外周附近的由ITO制成的透射电极膜5重叠至少2μm的宽度，从而抑制在ITO的边缘处的ITO和Al物质之间的电侵蚀 透射电极膜5。

公开(公告)号：US20020140895A1

公开(公告)日：2002-10-03

申请号：US10107578

申请日：2002-03-28

Applicant: NEC CORPORATION

Inventor： Shigeru Kimura ,  Akitoshi Maeda ,  Satoshi Doi ,  Takayuki Ishino

IPC: G02F001/136

CPC classification number: G02F1/136227 ,  G02F1/13439

Abstract: A liquid crystal display is fabricated which has bus wires disposed in a grid shape, switching elements coupled to the bus wires, and pixel electrodes which are disposed on an interlayer insulating film formed by coating and which are coupled with the switching elements. In fabricating the liquid crystal display, when a transparent conductive film is formed on the interlayer insulating film which is formed by coating, the temperature of the substrate is controlled to become 100null C.-170null C. In other way, when the transparent conductive film is formed on the interlayer insulating film in a non-heated condition, an oxygen flow rate ratio is set to 1% or lower, and annealing is performed after forming the film. Thereby, when etching the ITO film on the interlayer insulating film, etching residue is not produced. Further, contact resistance between the ITO film and the lower layer metal can be uniformly decreased, and display defects can be obviated.

Abstract translation: 制造液晶显示器，其具有以栅格形状布置的总线，耦合到母线的开关元件和设置在由涂层形成并与开关元件耦合的层间绝缘膜上的像素电极。 在制造液晶显示器时，当在通过涂布形成的层间绝缘膜上形成透明导电膜时，将基板的温度控制为100℃-170℃。换句话说，当透明 在非加热状态下在层间绝缘膜上形成导电膜，将氧气流量比设定为1％以下，在形成膜之后进行退火。 因此，当蚀刻层间绝缘膜上的ITO膜时，不会产生蚀刻残留物。 此外，可以均匀地减少ITO膜和下层金属之间的接触电阻，并且可以避免显示缺陷。

公开(公告)号：US20020085157A1

公开(公告)日：2002-07-04

申请号：US10028778

申请日：2001-12-28

Applicant: NEC CORPORATION

Inventor： Hiroaki Tanaka ,  Akira Fujita ,  Shigeru Kimura ,  Akitoshi Maeda ,  Takasuke Hayase

IPC: G02F001/1343

CPC classification number: H01L29/4908 ,  G02F1/13458 ,  G02F1/136286 ,  G02F2001/13629 ,  G02F2001/136295 ,  H01L29/458

Abstract: An active matrix addressing LCD device having an active matrix substrate on which conductive lines are formed is provided, which suppress the Al hillock without complicating the structure of the lines and which decreases the electrical connection resistance increase at the terminals of the lines, thereby improving the connection reliability. The device comprises an active matrix substrate having a transparent, dielectric plate, thin-film transistors (TFTs) arranged on the plate, and pixel electrodes arranged on the plate. Gate electrodes of the TFTs and scan lines have a first multilevel conductive structure. Common electrodes and common lines may have the first multilevel conductive structure. Source and drain electrodes of the TFTs and signal lines may have a second multilevel conductive structure. Each of the first and second multilevel conductive structures includes a three-level TiN/Ti/Al or TiN/Al/Ti structure or a four-level TiN/Ti/Al/Ti structure. Each of the TiN film of the first and second structures has a nitrogen concentration of 25 atomic % or higher. The Al film may be replaced with an Al alloy.

Abstract translation: 提供了一种有源矩阵寻址LCD装置，其具有形成有导电线的有源矩阵基板，其抑制Al小丘而不使线路的结构复杂化，并且降低了线路端子处的电连接电阻增加，从而改善了 连接可靠性。 该器件包括具有透明电介质板，布置在板上的薄膜晶体管（TFT）和布置在板上的像素电极的有源矩阵基板。 TFT和扫描线的栅极具有第一多层导电结构。 公共电极和公共线可以具有第一多层导电结构。 TFT和信号线的源极和漏极可以具有第二多层导电结构。 第一和第二多层导电结构中的每一个包括三级TiN / Ti / Al或TiN / Al / Ti结构或四级TiN / Ti / Al / Ti结构。 第一和第二结构的TiN膜的氮浓度为25原子％以上。 Al膜可以用Al合金代替。

公开(公告)号：US20020158994A1

公开(公告)日：2002-10-31

申请号：US10127929

申请日：2002-04-23

Applicant: NEC CORPORATION

Inventor： Yoshiaki Hashimoto ,  Hiroaki Tanaka ,  Shigeru Kimura ,  Syuusaku Kido

IPC: G02F001/136

CPC classification number: G02F1/136227 ,  G02F1/134363 ,  G02F2001/136236

Abstract: A method for manufacturing a liquid crystal display that provides a wide viewing angle and in which its manufacturing processes are shortened and high reliability is provided. The method includes a process of forming a gate electrode metal layer, gate insulator, and a-Si layer and forming an island by patterning using photolithography, a process of forming an interlayer insulating film and drain electrode metal layer and forming a drain line by patterning using photolithography, a process of forming an organic insulating film and forming an organic insulating contact used to provide a connection to a source electrode and a drain electrode al a specified position by photolithography, and a process of forming a transparent conductive layer and forming a pixel electrode and common electrode by patterning using photolithography.

Abstract translation: 一种提供宽视角的液晶显示器的制造方法，其制造工艺缩短并提供高可靠性。 该方法包括通过使用光刻法图案化形成栅电极金属层，栅极绝缘体和a-Si层并形成岛的工艺，形成层间绝缘膜和漏电极金属层的步骤，以及通过图案化形成漏极线 使用光刻法，形成有机绝缘膜并形成有机绝缘接触的工艺，用于通过光刻法提供与特定位置的源电极和漏电极的连接，以及形成透明导电层并形成像素的工艺 电极和公共电极。

公开(公告)号：US20020089615A1

公开(公告)日：2002-07-11

申请号：US10042144

申请日：2002-01-11

Applicant: NEC CORPORATION

Inventor： Michiaki Sakamoto ,  Yuji Yamamoto ,  Mamoru Okamoto ,  Shigeru Kimura ,  Shinichi Nakata ,  Shouichi Kuroha ,  Masanobu Hidehira ,  Yoshitaka Horie ,  Takayuki Ishino

IPC: G02F001/136

CPC classification number: G02F1/136209 ,  G02F1/133514 ,  G02F1/136227

Abstract: A liquid crystal display device is made up of a TFT substrate, an opposed substrate and a liquid crystal layer arranged between these substrates, in which the TFT substrate is provided with gate lines, data lines and TFT on its transparent insulative substrate, in addition, a passivation film is provided so as to cover them. Color filter is provided on the passivation film, and black matrix is provided at corresponding area to above part of the TFT and to above part of the data line on the color filter. In addition, a first overcoat layer with film thickness of degree of 1 to 3 nullm is provided so as to cover the black matrix. Further, a second overcoat layer with film thickness of approximate 0.5 nullm is provided at the whole surface except for a contact hole. Furthermore, a pixel electrode is provided on pixel formation area on the second overcoat layer.

Abstract translation: 液晶显示装置由TFT基板，相对基板和布置在这些基板之间的液晶层构成，其中TFT基板在其透明绝缘基板上设置有栅极线，数据线和TFT，另外， 提供钝化膜以覆盖它们。 在钝化膜上提供彩色滤光片，并且黑色矩阵设置在TFT上方的相应区域和彩色滤光片上数据线的上方。 此外，设置膜厚度为1〜3μm的第一覆盖层，以覆盖黑矩阵。 此外，除了接触孔之外，在整个表面上设置膜厚约为0.5μm的第二外涂层。 此外，像素电极设置在第二外涂层上的像素形成区域上。

公开(公告)号：US20020176032A1

公开(公告)日：2002-11-28

申请号：US10151544

申请日：2002-05-20

Applicant: NEC Corporation

Inventor： Akitoshi Maeda ,  Hiroaki Tanaka ,  Shigeru Kimura ,  Satoshi Kimura

IPC: G02F001/136

CPC classification number: G02F1/13458 ,  G02F1/136286 ,  G02F2001/13629 ,  G02F2001/136295 ,  H01L27/12 ,  H01L27/124 ,  H01L29/458 ,  H01L29/4908

Abstract: An active matrix substrate comprises a matrix array of TFTs. A double-layered film includes an under-layer of aluminum-neodymium (AlnullNd) alloy and an over-layer of high melting point metal. The double-layered film forms first interconnection lines for connection to the TFTs. A triple-layered film includes an under-layer of said high melting point metal, a middle-layer of said AlnullNd alloy and an over-layer of the high melting point metal. The triple-layered film forms second interconnection lines for connection to the TFTs.

Abstract translation: 有源矩阵基板包括TFT的矩阵阵列。 双层膜包括铝 - 钕（Al-Nd）合金的底层和高熔点金属的上层。 双层膜形成用于连接到TFT的第一互连线。 三层膜包括所述高熔点金属的下层，所述Al-Nd合金的中间层和高熔点金属的上层。 三层膜形成用于连接到TFT的第二互连线。

公开(公告)号：US20020036742A1

公开(公告)日：2002-03-28

申请号：US09965566

申请日：2001-09-27

Applicant: NEC Corporation

Inventor： Shigeru Kimura ,  Hiroaki Tanaka ,  Akira Fujita ,  Kiyofumi Kudou ,  Takahiko Watanabe ,  Hiroyuki Uchida ,  Akitoshi Maeda

IPC: G02F001/1343

CPC classification number: G02F1/134363 ,  G02F1/1345

Abstract: An active matrix LCD device includes a TFT panel, a counter panel and liquid crystal interposed therebetween. The TFT panel includes a plurality of scanning lines and a plurality of common lines formed in one layer and extending in a row direction, and a plurality of signal lines extending in a column direction. A coupling line for coupling the common lines together is disposed outside the pixel array of the TFT panel, such as in a TCP mounted on the TFT panel and mounting thereon a driver IC for driving the scanning lines.

Abstract translation: 有源矩阵LCD装置包括TFT面板，对面板和插入其间的液晶。 TFT面板包括形成在一个层中并沿行方向延伸的多条扫描线和多条公共线，以及沿列方向延伸的多条信号线。 用于将公共线连接在一起的耦合线设置在TFT面板的像素阵列的外部，诸如安装在TFT面板上的TCP中，并且安装用于驱动扫描线的驱动器IC。