公开(公告)号：US20020176032A1

公开(公告)日：2002-11-28

申请号：US10151544

申请日：2002-05-20

Applicant: NEC Corporation

Inventor： Akitoshi Maeda ,  Hiroaki Tanaka ,  Shigeru Kimura ,  Satoshi Kimura

IPC: G02F001/136

CPC classification number: G02F1/13458 ,  G02F1/136286 ,  G02F2001/13629 ,  G02F2001/136295 ,  H01L27/12 ,  H01L27/124 ,  H01L29/458 ,  H01L29/4908

Abstract: An active matrix substrate comprises a matrix array of TFTs. A double-layered film includes an under-layer of aluminum-neodymium (AlnullNd) alloy and an over-layer of high melting point metal. The double-layered film forms first interconnection lines for connection to the TFTs. A triple-layered film includes an under-layer of said high melting point metal, a middle-layer of said AlnullNd alloy and an over-layer of the high melting point metal. The triple-layered film forms second interconnection lines for connection to the TFTs.

Abstract translation: 有源矩阵基板包括TFT的矩阵阵列。 双层膜包括铝 - 钕（Al-Nd）合金的底层和高熔点金属的上层。 双层膜形成用于连接到TFT的第一互连线。 三层膜包括所述高熔点金属的下层，所述Al-Nd合金的中间层和高熔点金属的上层。 三层膜形成用于连接到TFT的第二互连线。

公开(公告)号：US20020036742A1

公开(公告)日：2002-03-28

申请号：US09965566

申请日：2001-09-27

Applicant: NEC Corporation

Inventor： Shigeru Kimura ,  Hiroaki Tanaka ,  Akira Fujita ,  Kiyofumi Kudou ,  Takahiko Watanabe ,  Hiroyuki Uchida ,  Akitoshi Maeda

IPC: G02F001/1343

CPC classification number: G02F1/134363 ,  G02F1/1345

Abstract: An active matrix LCD device includes a TFT panel, a counter panel and liquid crystal interposed therebetween. The TFT panel includes a plurality of scanning lines and a plurality of common lines formed in one layer and extending in a row direction, and a plurality of signal lines extending in a column direction. A coupling line for coupling the common lines together is disposed outside the pixel array of the TFT panel, such as in a TCP mounted on the TFT panel and mounting thereon a driver IC for driving the scanning lines.

Abstract translation: 有源矩阵LCD装置包括TFT面板，对面板和插入其间的液晶。 TFT面板包括形成在一个层中并沿行方向延伸的多条扫描线和多条公共线，以及沿列方向延伸的多条信号线。 用于将公共线连接在一起的耦合线设置在TFT面板的像素阵列的外部，诸如安装在TFT面板上的TCP中，并且安装用于驱动扫描线的驱动器IC。

公开(公告)号：US20020140895A1

公开(公告)日：2002-10-03

申请号：US10107578

申请日：2002-03-28

Applicant: NEC CORPORATION

Inventor： Shigeru Kimura ,  Akitoshi Maeda ,  Satoshi Doi ,  Takayuki Ishino

IPC: G02F001/136

CPC classification number: G02F1/136227 ,  G02F1/13439

Abstract: A liquid crystal display is fabricated which has bus wires disposed in a grid shape, switching elements coupled to the bus wires, and pixel electrodes which are disposed on an interlayer insulating film formed by coating and which are coupled with the switching elements. In fabricating the liquid crystal display, when a transparent conductive film is formed on the interlayer insulating film which is formed by coating, the temperature of the substrate is controlled to become 100null C.-170null C. In other way, when the transparent conductive film is formed on the interlayer insulating film in a non-heated condition, an oxygen flow rate ratio is set to 1% or lower, and annealing is performed after forming the film. Thereby, when etching the ITO film on the interlayer insulating film, etching residue is not produced. Further, contact resistance between the ITO film and the lower layer metal can be uniformly decreased, and display defects can be obviated.

Abstract translation: 制造液晶显示器，其具有以栅格形状布置的总线，耦合到母线的开关元件和设置在由涂层形成并与开关元件耦合的层间绝缘膜上的像素电极。 在制造液晶显示器时，当在通过涂布形成的层间绝缘膜上形成透明导电膜时，将基板的温度控制为100℃-170℃。换句话说，当透明 在非加热状态下在层间绝缘膜上形成导电膜，将氧气流量比设定为1％以下，在形成膜之后进行退火。 因此，当蚀刻层间绝缘膜上的ITO膜时，不会产生蚀刻残留物。 此外，可以均匀地减少ITO膜和下层金属之间的接触电阻，并且可以避免显示缺陷。

公开(公告)号：US20020085157A1

公开(公告)日：2002-07-04

申请号：US10028778

申请日：2001-12-28

Applicant: NEC CORPORATION

Inventor： Hiroaki Tanaka ,  Akira Fujita ,  Shigeru Kimura ,  Akitoshi Maeda ,  Takasuke Hayase

IPC: G02F001/1343

CPC classification number: H01L29/4908 ,  G02F1/13458 ,  G02F1/136286 ,  G02F2001/13629 ,  G02F2001/136295 ,  H01L29/458

Abstract: An active matrix addressing LCD device having an active matrix substrate on which conductive lines are formed is provided, which suppress the Al hillock without complicating the structure of the lines and which decreases the electrical connection resistance increase at the terminals of the lines, thereby improving the connection reliability. The device comprises an active matrix substrate having a transparent, dielectric plate, thin-film transistors (TFTs) arranged on the plate, and pixel electrodes arranged on the plate. Gate electrodes of the TFTs and scan lines have a first multilevel conductive structure. Common electrodes and common lines may have the first multilevel conductive structure. Source and drain electrodes of the TFTs and signal lines may have a second multilevel conductive structure. Each of the first and second multilevel conductive structures includes a three-level TiN/Ti/Al or TiN/Al/Ti structure or a four-level TiN/Ti/Al/Ti structure. Each of the TiN film of the first and second structures has a nitrogen concentration of 25 atomic % or higher. The Al film may be replaced with an Al alloy.

Abstract translation: 提供了一种有源矩阵寻址LCD装置，其具有形成有导电线的有源矩阵基板，其抑制Al小丘而不使线路的结构复杂化，并且降低了线路端子处的电连接电阻增加，从而改善了 连接可靠性。 该器件包括具有透明电介质板，布置在板上的薄膜晶体管（TFT）和布置在板上的像素电极的有源矩阵基板。 TFT和扫描线的栅极具有第一多层导电结构。 公共电极和公共线可以具有第一多层导电结构。 TFT和信号线的源极和漏极可以具有第二多层导电结构。 第一和第二多层导电结构中的每一个包括三级TiN / Ti / Al或TiN / Al / Ti结构或四级TiN / Ti / Al / Ti结构。 第一和第二结构的TiN膜的氮浓度为25原子％以上。 Al膜可以用Al合金代替。

公开(公告)号：US20010055086A1

公开(公告)日：2001-12-27

申请号：US09924767

申请日：2001-08-09

Applicant: NEC CORPORATION

Inventor： Akitoshi Maeda

IPC: G02F001/136

CPC classification number: G02F1/1345

Abstract: A simple method for preventing oxidization of an aluminum surface of terminal electrode, increase of pressure contact resistance, unstability and reduction of connection reliability is provided. In a terminal electrode part on a reactive matrix substrate, for being connected to an external drive circuit, connecting electrodes are formed by using aluminum or an aluminum alloy, at least their surfaces connected to TCP are covered with an insulating film of aluminum oxide or consisting of a laminate film of aluminum oxide aluminum hydroxide, and the insulating film is selectively removed in a step subsequent to the final step in a cell formation process. In this way, adverse effects of the heat treatment processes such as the annealing in the array formation process and the orientation film sintering of the cell formation process and the oxidization of the connecting electrode surface in the washing.

Abstract translation: 提供了一种防止端子电极的铝表面氧化的简单方法，增加了耐压接触性，不稳定性和连接可靠性的降低。 在反应性基质基板上的端子电极部分中，为了连接到外部驱动电路，通过使用铝或铝合金形成连接电极，至少其连接到TCP的表面被氧化铝的绝缘膜覆盖，或者由 的氧化铝氢氧化铝的层压膜，并且在细胞形成过程中的最终步骤之后的步骤中选择性地除去绝缘膜。 以这种方式，诸如阵列形成过程中的退火和细胞形成过程的取向膜烧结以及洗涤中连接电极表面的氧化的热处理过程的不利影响。

公开(公告)号：US20010010370A1

公开(公告)日：2001-08-02

申请号：US09745657

申请日：2000-12-20

Applicant: NEC Corporation

Inventor： Shigeru Kimura ,  Takahiko Watanabe ,  Tae Yoshikawa ,  Hiroyuki Uchida ,  Shusaku Kido ,  Shinichi Nakata ,  Tsutomu Hamada ,  Hisanobu Shimodouzono ,  Satoshi Doi ,  Toshihiko Harano ,  Akitoshi Maeda ,  Satoshi Ihida ,  Hiroaki Tanaka ,  Takasuke Hayase ,  Shouichi Kuroha ,  Hirofumi Ihara ,  Kazushige Takechi

IPC: H01L021/00 ,  H01L031/036

CPC classification number: G02F1/134363

Abstract: An active matrix substrate plate having superior properties is manufactured at high yield using four photolithographic fabrication steps. In step 1, the scanning line and the gate electrode extending from the scanning line are formed in the glass plate. In step 2, the gate insulation layer and the semiconductor layer comprised by amorphous silicon layer and nnull amorphous silicon layer is laminated to provide the semiconductor layer for the TFT section. In step 3, the transparent conductive layer and the metallic layer are laminated, and the signal line, the drain electrode extending from the signal line, the pixel electrode and the source electrode extending from the pixel electrode are formed, and the nnull amorphous silicon layer of the channel gap is removed by etching. In step 4, the protective insulation layer is formed, and the protective insulation layer and the metal layer above the pixel electrode are removed by etching.

Abstract translation: 使用四个光刻制造步骤以高产率制造具有优异性能的有源矩阵基板。 在步骤1中，在玻璃板上形成扫描线和从扫描线延伸的栅电极。 在步骤2中，层叠由非晶硅层和n +非晶硅层构成的栅极绝缘层和半导体层，为TFT部分提供半导体层。 在步骤3中，层叠透明导电层和金属层，形成信号线，从信号线延伸的漏极，从像素电极延伸的像素电极和源电极，并且n +非晶硅层 通过蚀刻去除通道间隙。 在步骤4中，形成保护绝缘层，通过蚀刻除去保护绝缘层和像素电极上方的金属层。

公开(公告)号：US20020159010A1

公开(公告)日：2002-10-31

申请号：US10132325

申请日：2002-04-26

Applicant: NEC CORPORATION

Inventor： Akitoshi Maeda ,  Kyounei Yasuda ,  Hiroaki Tanaka ,  Syuusaku Kido

IPC: G02F001/1335

CPC classification number: G02F1/136227 ,  G02F1/133553 ,  G02F1/13439 ,  G02F2001/136236

Abstract: A method for manufacturing a reflective-type liquid crystal display which is capable of reducing a number of processes for a thin film transistor used in the reflective-type liquid crystal display. A reflective electrode to be connected to a source electrode of the thin film transistor and a terminal portion connecting electrode to be connected to a terminal portion lower metal film are simultaneously formed on an organic insulating film having convex and concave portions. As a material for the reflective electrode and the terminal portion lower metal film, an AlnullNd (AluminumnullNeodymium) containing 0.9% or more by atom of Nd having excellent corrosion resistance is used.

Abstract translation: 一种反射型液晶显示器的制造方法，其能够减少用于反射型液晶显示器的薄膜晶体管的工序数量。 在具有凸部和凹部的有机绝缘膜上同时形成与薄膜晶体管的源极连接的反射电极和与端子部下部金属膜连接的端子部连接用电极。 作为反射电极和端子部下部金属膜的材料，使用含有0.9％以上的具有优异耐腐蚀性的Nd原子的Al-Nd（铝 - 钕）。