公开(公告)号：US20020176032A1

公开(公告)日：2002-11-28

申请号：US10151544

申请日：2002-05-20

Applicant: NEC Corporation

Inventor： Akitoshi Maeda ,  Hiroaki Tanaka ,  Shigeru Kimura ,  Satoshi Kimura

IPC: G02F001/136

CPC classification number: G02F1/13458 ,  G02F1/136286 ,  G02F2001/13629 ,  G02F2001/136295 ,  H01L27/12 ,  H01L27/124 ,  H01L29/458 ,  H01L29/4908

Abstract: An active matrix substrate comprises a matrix array of TFTs. A double-layered film includes an under-layer of aluminum-neodymium (AlnullNd) alloy and an over-layer of high melting point metal. The double-layered film forms first interconnection lines for connection to the TFTs. A triple-layered film includes an under-layer of said high melting point metal, a middle-layer of said AlnullNd alloy and an over-layer of the high melting point metal. The triple-layered film forms second interconnection lines for connection to the TFTs.

Abstract translation: 有源矩阵基板包括TFT的矩阵阵列。 双层膜包括铝 - 钕（Al-Nd）合金的底层和高熔点金属的上层。 双层膜形成用于连接到TFT的第一互连线。 三层膜包括所述高熔点金属的下层，所述Al-Nd合金的中间层和高熔点金属的上层。 三层膜形成用于连接到TFT的第二互连线。