公开(公告)号：US20040104199A1

公开(公告)日：2004-06-03

申请号：US10704562

申请日：2003-11-12

Applicant: NEC LCD TECHNOLOGIES LTD

Inventor： Tadanori Uesugi ,  Shigeru Kimura

IPC: C23F017/00

CPC classification number: H01L21/6708 ,  C23F1/02 ,  C23F1/08 ,  H01L21/32134 ,  H01L21/67028 ,  H05K3/068 ,  H05K2201/0317 ,  H05K2201/0338 ,  H05K2203/1476 ,  Y10S438/978

Abstract: A combined wet etching method for stacked films which is capable of performing etching processes in a collective manner while controlling an amount of side-etching on each of stacked films and of making uniform side edges. In the wet etching method, two or more types of etching methods are performed in combination, on stacked films containing first and second films being deposited sequentially on a substrate and each having a different film property. The two or more types of wet etching methods include, at least, a first wet etching method in which side-etching on the first film is facilitated more than side-etching on the second film and a second wet etching method in which side-etching on the second film is facilitated more than side-etching on the first film.

Abstract translation: 一种用于层叠膜的组合湿式蚀刻方法，其能够以集中的方式执行蚀刻处理，同时控制每个堆叠膜上的侧面蚀刻的量并且使均匀的侧边缘。 在湿式蚀刻方法中，组合地进行两种以上的蚀刻方法，其中，在基板上依次沉积含有第一和第二膜的层叠膜，并且各自具有不同的膜性质。 这两种以上的湿蚀刻方法至少包括第一湿式蚀刻方法，其中第一膜上的侧蚀刻比第二膜上的侧蚀刻更容易;以及第二湿蚀刻方法，其中侧蚀刻 在第一膜上的多次侧蚀刻促进了第二膜。