公开(公告)号：US20040014261A1

公开(公告)日：2004-01-22

申请号：US10617170

申请日：2003-07-11

Applicant: NEC LCD Technologies, Ltd.

Inventor： Mitsuasa Takahashi

IPC: H01L021/00 ,  H01L021/84 ,  H01L021/20 ,  H01L021/36 ,  H01L021/42 ,  C30B001/00

CPC classification number: H01L21/02675 ,  C30B1/00 ,  C30B29/06 ,  H01L21/2026 ,  H01L21/268 ,  H01L27/12 ,  H01L27/1285

Abstract: Prior to converting a non-single crystal material of a semiconductor film into a single crystal material through the use of a laser beam, at least one dopant is introduced into whole of the semiconductor film. Then, the non-single crystal semiconductor film is irradiated with a laser beam to crystallize the semiconductor film. In this case, a ratio between quasi-fermi level of the single crystal material within one of transistor formation regions used to form transistors of different conductivity types and quasi-fermi level of the single crystal material within the other thereof is made to be between 0.5:1 and 2.0:1. Thus, transistors of different conductivity types are formed in the crystallized semiconductor film.

Abstract translation: 在通过使用激光束将半导体膜的非单晶材料转换为单晶材料之前，将至少一种掺杂剂引入整个半导体膜。 然后，用激光束照射非单晶半导体膜，使半导体膜结晶化。 在这种情况下，用于形成不同导电类型的晶体管的晶体管形成区域之一内的单晶材料的准费米能级与其他单晶材料的准费米能级之间的比率为0.5 ：1和2.0：1。 因此，在结晶的半导体膜中形成不同导电类型的晶体管。