Infrared sensor
    1.
    发明授权
    Infrared sensor 有权
    红外传感器

    公开(公告)号:US09274006B2

    公开(公告)日:2016-03-01

    申请号:US13959479

    申请日:2013-08-05

    摘要: An infrared sensor includes a circuit board, at least two support portions, a FET element and a pyroelectric element. The circuit board has an upper principal surface formed with plural electrodes. Each of the support portions has an upper surface, a lower surface, an upper conductive pattern formed on the upper surface and a lower conductive pattern formed on the lower surface. The upper conductive pattern is electrically connected with the lower conductive pattern. The lower conductive pattern is connected to an electrode of the upper principal surface of the circuit board. The FET element is located between the at least two support portions and arranged on the upper principal surface of the circuit board. The pyroelectric element is electrically connected with the upper conductive patterns of the support portions, and is supported by the support portions so as to be located above the FET element.

    摘要翻译: 红外传感器包括电路板,至少两个支撑部分,FET元件和热电元件。 电路板具有形成有多个电极的上主面。 每个支撑部分具有形成在上表面上的上表面,下表面,上导电图案和形成在下表面上的下导电图案。 上导电图案与下导电图案电连接。 下导电图案连接到电路板的上主表面的电极。 FET元件位于至少两个支撑部分之间并且布置在电路板的上主表面上。 热电元件与支撑部分的上导电图案电连接,并被支撑部分支撑以便位于FET元件上方。