公开(公告)号：US09129803B2

公开(公告)日：2015-09-08

申请号：US13920814

申请日：2013-06-18

Applicant: NEW JERSEY INSTITUTE OF TECHNOLOGY

Inventor： Haim Grebel ,  Amrita Banerjee

IPC: H01L21/332 ,  H01L21/02 ,  H01L29/16 ,  H01L29/66 ,  H01L29/786 ,  H01L29/778

CPC classification number: H01L21/02527 ,  H01L21/0237 ,  H01L21/02425 ,  H01L21/02488 ,  H01L21/02664 ,  H01L29/16 ,  H01L29/1606 ,  H01L29/66742 ,  H01L29/778 ,  H01L29/78684

Abstract: Methods, devices, systems and/or articles related to techniques for forming a graphene film on a substrate, and the resulting graphene layers and graphenated substrates are generally disclosed. Some example techniques may be embodied as methods or processes for forming graphene. Some other example techniques may be embodied as devices employed to manipulate, treat, or otherwise process substrates, graphite, graphene and/or graphenated substrates as described herein. Graphene layers and graphenated substrates produced by the various techniques and devices provided herein are also disclosed.

Abstract translation: 通常公开了与在衬底上形成石墨烯膜的技术相关的方法，装置，系统和/或制品，以及所得到的石墨烯层和石墨烯化衬底。 一些示例性技术可以被体现为用于形成石墨烯的方法或过程。 一些其它示例性技术可以被实施为用于操纵，处理或以其他方式处理如本文所述的衬底，石墨，石墨烯和/或石墨烯化衬底的器件。 还公开了通过本文提供的各种技术和装置生产的石墨烯层和石墨化衬底。