公开(公告)号：US09508889B2

公开(公告)日：2016-11-29

申请号：US13916823

申请日：2013-06-13

申请人： NEWSOUTH INNOVATIONS PTY LIMITED

发明人： Martin Green ,  Xiaojing Hao ,  Chao-Yang Tsao

IPC分类号： H01L31/028 ,  H01L31/18 ,  C23C14/06 ,  C30B23/02 ,  C30B29/08 ,  H01L21/02 ,  H01L31/0725 ,  H01L31/0735

CPC分类号： H01L31/1816 ,  C23C14/06 ,  C30B23/02 ,  C30B23/025 ,  C30B29/08 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02631 ,  H01L21/02658 ,  H01L31/028 ,  H01L31/0725 ,  H01L31/0735 ,  H01L31/1852 ,  Y02E10/544

摘要： A method is presented for forming a Ge containing layer on a Si substrate. The method includes providing a crystalline Si substrate having a surface that has a crystallographic orientation, heating the Si substrate in a vacuum environment, exposing the Si substrate to a surfactant that is suitable for growth of the Ge containing layer on the crystalline Si using surfactant mediation, and thereafter growing the Ge containing layer on the surface of the heated Si substrate using a suitable sputtering technique. The conditions of the growth of the Ge containing layer are selected such that a thin Ge containing layer is formed on the surface of the Si substrate. The thin Ge containing layer has a surface that has crystallographic properties suitable for epitaxial growth of a layer of a further material on the surface of the thin Ge containing layer.

摘要翻译： 提出了在Si衬底上形成含Ge层的方法。 该方法包括提供具有晶体取向的表面的晶体Si衬底，在真空环境中加热Si衬底，使用表面活性剂介质将Si衬底暴露于适合于在结晶Si上生长Ge的表面活性剂 ，然后使用合适的溅射技术在加热的Si衬底的表面上生长Ge含量层。 选择Ge含量层的生长条件使得在Si衬底的表面上形成含有薄的Ge含量层。 薄的Ge含有层具有适于在薄Ge含量层的表面上进一步材料层的外延生长的晶体学性质的表面。