FOUR-LAYER SEMICONDUCTOR DEVICE AND ESD PROTECTION CIRCUIT

    公开(公告)号:US20240120330A1

    公开(公告)日:2024-04-11

    申请号:US18482163

    申请日:2023-10-06

    申请人: NEXPERIA B.V.

    发明人: Markus Mergens

    IPC分类号: H01L27/02 H01L29/87

    CPC分类号: H01L27/0248 H01L29/87

    摘要: The present disclosure generally relates to a four-layer semiconductor device, such as a silicon-controlled rectifier. Further aspects of the present disclosure relate to an electrostatic discharge (ESD), protection circuit including the same. In the four-layer semiconductor device in accordance with the present disclosure, an electrical insulation is provided that extends at least partially inside the epitaxial layer and that prevents a current from flowing between the first device terminal and the second device terminal that does not at least partially flow through the semiconductor substrate.

    ESD PROTECTION DEVICE
    3.
    发明公开

    公开(公告)号:US20230163118A1

    公开(公告)日:2023-05-25

    申请号:US17993173

    申请日:2022-11-23

    申请人: NEXPERIA B.V.

    IPC分类号: H01L27/02 H02H9/02

    摘要: A protection device is provided for protecting an electrostatic discharge (ESD), sensitive device against an electromagnetic interference (EMI), event and/or an ESD event occurring on at least one of a first and second data line the ESD sensitive device is electrically connected to. Aspects of the present disclosure further relate to a system including an ESD sensitive device that is operatively coupled to a further device using a first and second data line, and the system includes the abovementioned protection device. The protection device uses a first inductor and/or second inductor and a first and/or shunt unit that each provide an electrical path between the first data line and/or second data line and ground in dependence of a voltage over the first and/or second inductor.