-
公开(公告)号:US10276410B2
公开(公告)日:2019-04-30
申请号:US13667512
申请日:2012-11-02
Applicant: NHK SPRING CO., LTD.
Inventor: Toshihiro Tachikawa , Junichi Miyahara , Kazuhiro Yonekura , Toshihiko Hanamachi , Go Takahara , Jun Futakuchiya , Daisuke Hashimoto
IPC: H01L21/683 , H05B3/68 , H01L21/67 , H01L21/687
Abstract: A substrate support device formed of a metal and having a high withstand voltage and a high thermal resistance is provided. A substrate support device according to the present invention includes a plate section formed of a metal; a shaft section connected to the plate section and formed of a metal; a heating element provided in the plate section; and an insulating film formed on a first surface of the plate section, the first surface opposite to the shaft section, by ceramic thermal spraying. The substrate support device may further include an insulating film formed on a second surface of the plate section which intersects the first surface of the plate section approximately perpendicularly.
-
公开(公告)号:US20130134148A1
公开(公告)日:2013-05-30
申请号:US13667512
申请日:2012-11-02
Applicant: NHK Spring Co., Ltd.
Inventor: Toshihiro TACHIKAWA , Junichi Miyahara , Kazuhiro Yonekura , Toshihiko Hanamachi , Go Takahara , Jun Futakuchiya , Daisuke Hashimoto
IPC: H01L21/683 , H05B3/68
CPC classification number: H01L21/67103 , H01L21/67109 , H01L21/68735 , H01L21/68785
Abstract: A substrate support device formed of a metal and having a high withstand voltage and a high thermal resistance is provided. A substrate support device according to the present invention includes a plate section formed of a metal; a shaft section connected to the plate section and formed of a metal; a heating element provided in the plate section; and an insulating film formed on a first surface of the plate section, the first surface opposite to the shaft section, by ceramic thermal spraying. The substrate support device may further include an insulating film formed on a second surface of the plate section which intersects the first surface of the plate section approximately perpendicularly.
-