公开(公告)号：US20140370630A1

公开(公告)日：2014-12-18

申请号：US14470565

申请日：2014-08-27

Applicant: NICHIA CORPORATION

Inventor： Yohei WAKAI ,  Hiroaki MATSUMURA ,  Kenji OKA

IPC: H01L33/00

CPC classification number: H01L33/005 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/22 ,  H01L33/36 ,  H01L33/382 ,  H01L33/44 ,  H01L2933/0016 ,  H01L2933/0058

Abstract: A semiconductor light emitting device having high reliability and excellent light distribution characteristics can be provided with an n-electrode arranged on a light extraction surface on the side opposite to the surface whereupon a semiconductor stack is mounted on a substrate. A plurality of convexes are arranged on a first convex region and a second convex region on the light extraction surface. The second convex region adjoins the interface between the n-electrode and the semiconductor stack, between the first convex region and the n-electrode. The base end of the first convex arranged in the first convex region is positioned closer to a light emitting layer than the interface between the n-electrode and the semiconductor stack, and the base end of the second convex arranged in the second convex region is positioned closer to the interface between the n-electrode and the semiconductor stack than the base end of the first convex.

Abstract translation: 可以提供具有高可靠性和优异的配光特性的半导体发光器件，其配置在与衬底上安装有半导体叠层的表面相反的一侧上的光提取表面上的n电极。 多个凸起布置在光提取表面上的第一凸区域和第二凸区域上。 第二凸区域与第一凸区域和n电极之间的n电极和半导体堆叠体之间的界面相邻。 布置在第一凸区域中的第一凸部的基端位于比n电极和半导体叠层之间的界面更靠近发光层的位置，并且布置在第二凸区域中的第二凸起的基端位于 比第一凸起的基端更靠近n电极和半导体叠层之间的界面。

公开(公告)号：US20140038328A1

公开(公告)日：2014-02-06

申请号：US14021551

申请日：2013-09-09

Applicant: Nichia Corporation

Inventor： Yohei WAKAI ,  Hiroaki MATSUMURA ,  Kenji OKA

IPC: H01L33/22 ,  H01L33/00

CPC classification number: H01L33/005 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/22 ,  H01L33/36 ,  H01L33/382 ,  H01L33/44 ,  H01L2933/0016 ,  H01L2933/0058

Abstract: A semiconductor light emitting device having high reliability and excellent light distribution characteristics can be provided with an n-electrode arranged on a light extraction surface on the side opposite to the surface whereupon a semiconductor stack is mounted on a substrate. A plurality of convexes are arranged on a first convex region and a second convex region on the light extraction surface. The second convex region adjoins the interface between the n-electrode and the semiconductor stack, between the first convex region and the n-electrode. The base end of the first convex arranged in the first convex region is positioned closer to a light emitting layer than the interface between the n-electrode and the semiconductor stack, and the base end of the second convex arranged in the second convex region is positioned closer to the interface between the n-electrode and the semiconductor stack than the base end of the first convex.