公开(公告)号：US20190371968A1

公开(公告)日：2019-12-05

申请号：US16546204

申请日：2019-08-20

Applicant: NICHIA CORPORATION

Inventor： Koji ASADA ,  Tokutaro OKABE

IPC: H01L33/32 ,  H01L33/06 ,  H01L33/14 ,  H01L33/36

Abstract: A nitride semiconductor light emitting element includes: an n-side layer; a p-side layer; an active layer disposed between the n-side layer and the p-side layer, the active layer comprising: a well layer containing Al, Ga, and N, and a barrier layer containing Al, Ga, and N, wherein an Al content of the barrier layer is higher than an Al content of the well layer; and an electron blocking structure layer between the active layer and the p-side layer, the electron blocking structure comprising: a first electron blocking layer disposed between the p-side layer and the active layer, a second electron blocking layer disposed between the p-side layer and the first electron blocking layer, and an intermediate layer disposed between the first electron blocking layer and the second electron blocking layer.

公开(公告)号：US20180287014A1

公开(公告)日：2018-10-04

申请号：US15763375

申请日：2016-09-21

Applicant: NICHIA CORPORATION

Inventor： Koji ASADA ,  Tokutaro OKABE

IPC: H01L33/32 ,  H01L33/06 ,  H01L33/36 ,  H01L33/14

CPC classification number: H01L33/32 ,  H01L33/025 ,  H01L33/06 ,  H01L33/145 ,  H01L33/36

Abstract: A nitride semiconductor light emitting element includes: an n-side layer; a p-side layer; an active layer including: a well layer containing Al, Ga, and N, and a barrier layer containing Al, Ga, and N, wherein an Al content of the barrier layer is higher than that of the well layer; and an electron blocking structure layer between the active layer and the p-side layer and including: a first electron blocking layer disposed between the p-side layer and the active layer and having a bandgap larger than that of the barrier layer, a second electron blocking layer disposed between the p-side layer and the first electron blocking layer and having a bandgap larger than that of the barrier layer, but smaller than the bandgap of the first electron blocking layer, and an intermediate layer disposed therebetween and having a bandgap smaller than that of the second electron blocking layer.

公开(公告)号：US20230231079A1

公开(公告)日：2023-07-20

申请号：US18156240

申请日：2023-01-18

Applicant: NICHIA CORPORATION

Inventor： Koji ASADA ,  Takuya OKADA

IPC: H01L33/38 ,  H01L33/62 ,  H01L33/02 ,  H01L33/32 ,  H01L33/00

CPC classification number: H01L33/382 ,  H01L33/62 ,  H01L33/025 ,  H01L33/32 ,  H01L33/0075 ,  H01L2933/0016 ,  H01L2933/0066

Abstract: A light emitting element comprises a semiconductor structure which includes an n-side layer, a p-side layer, and an ultraviolet light emitting active layer positioned between the n-side layer and the p-side layer, each being made of a nitride semiconductor, an n-electrode electrically connected to the n-side layer, and a p-electrode electrically connected to the p-side layer. The active layer has a well layer containing Al, a barrier layer containing Al, and holes defined by the lateral faces of the well layer and the lateral faces of the barrier layer. The p-side layer has a first layer containing Al, a second layer containing Al disposed on the first layer and in contact with the lateral faces of the well layer, and a third layer disposed on the second layer. The third layer is smaller in thickness than the first layer.