公开(公告)号：US20180287009A1

公开(公告)日：2018-10-04

申请号：US15941402

申请日：2018-03-30

Applicant: NICHIA CORPORATION

Inventor： Kazuhiro NAGAMINE ,  Yoshiki INOUE ,  Susumu TOKO ,  Junya NARITA

IPC: H01L33/00 ,  H01L33/32 ,  H01L33/44 ,  H01L33/42

Abstract: A method of manufacturing a plurality of light emitting elements, the method includes: providing a semiconductor wafer; dividing the p-side nitride semiconductor layer into a plurality of demarcated element regions; forming a protective layer on regions including an outer periphery of an upper surface of the p-side nitride semiconductor layer of each of the plurality of demarcated element regions and exposed side surfaces in the semiconductor structure that are formed by the selectively removing the portion of the p-side nitride semiconductor layer; reducing a resistance of regions of the p-side nitride semiconductor layer; and dividing the semiconductor wafer into a plurality of light emitting elements.