公开(公告)号：US11982017B2

公开(公告)日：2024-05-14

申请号：US18037565

申请日：2021-06-11

申请人： NINGBO INSTITUTE OF MATERIALS TECHNOLOGY AND ENGINEERING, CHINESE ACADEMY OF SCIENCES

发明人： Ruyi Zhang ,  Yanwei Cao ,  Yang Song ,  Shaoqin Peng ,  Jiachang Bi

IPC分类号： C23C14/08 ,  C30B23/02 ,  C30B23/06 ,  C30B29/22 ,  H01J37/34

CPC分类号： C30B29/22 ,  C23C14/08 ,  C23C14/082 ,  C23C14/086 ,  C30B23/025 ,  C30B23/063 ,  H01J37/3405 ,  H01J37/3426 ,  H01J2237/332

摘要： A method for fabricating a transparent conductive oxide thin film, the method comprising the following steps: fabricating Ba1-xLaxSnO3 using a solid-phase reaction method to obtain a BLSO magnetron sputtering target material; and fabricating a BLSO thin film by means of direct deposition with argon as a sputtering gas by using a SrTiO3, MgO, LaAlO3, (La,Sr)(Al,Ta)O3(LSAT), MgAl2O4 or Al2O3 single crystal substrate and the BLSO magnetron sputtering target material, such that the transparent conductive oxide thin film is fabricate is provided. During sputtering, the temperature of the substrate is 750° C.-950° C., and the deposition pressure of the Ar gas is 25-77 Pa. The room-temperature mobility of the transparent conductive oxide thin film can reach 115 cm2/V·s, the room-temperature carrier concentration can reach 1.2×1021 cm−3, and the room-temperature conductivity can reach 14,000 S/cm.