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公开(公告)号：US11557674B2
公开(公告)日：2023-01-17
申请号：US17262001
申请日：2018-07-27
发明人： Toshiharu Marui , Tetsuya Hayashi , Keiichiro Numakura , Wei Ni , Ryota Tanaka , Keisuke Takemoto
摘要： A semiconductor device includes: a substrate (10); a semiconductor layer (20) disposed on a main surface of this substrate (10); and a first main electrode (30) and a second main electrode (40), which are disposed on the substrate (10) separately from each other with the semiconductor layer (20) sandwiched therebetween and are individually end portions of a current path of a main current flowing in an on-state. The semiconductor layer (20) includes: a first conductivity-type drift region (21) through which a main current flows; a second conductivity-type column region (22) that is disposed inside the drift region (21) and extends in parallel to a current path; and an electric field relaxation region (23) that is disposed in at least a part between the drift region (21) and the column region (22) and is either a low-concentration region in which an impurity concentration is lower than in the same conductivity-type adjacent region or a non-doped region.
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公开(公告)号：US11476326B2
公开(公告)日：2022-10-18
申请号：US17423966
申请日：2019-01-21
发明人： Toshiharu Marui , Tetsuya Hayashi , Keiichiro Numakura , Wei Ni , Ryota Tanaka , Keisuke Takemoto
摘要： A semiconductor device includes a semiconductor base body, and a first main electrode and a second main electrode provided on the semiconductor base body. The semiconductor base body includes a drift region of a first conductivity type through which a main current flows, a column region of a second conductivity type arranged adjacent to the drift region in parallel to a current passage of the main current, a second electrode-connection region of the first conductivity type electrically connected to the second main electrode, and a low-density electric-field relaxation region of the first conductivity type having a lower impurity concentration than the drift region and arranged between the second electrode-connection region and the column region.
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公开(公告)号：US12068411B2
公开(公告)日：2024-08-20
申请号：US17040631
申请日：2018-03-26
发明人： Toshiharu Marui , Tetsuya Hayashi , Keiichiro Numakura , Wei Ni , Ryota Tanaka , Keisuke Takemoto
IPC分类号： H01L29/78 , H01L29/06 , H01L29/417 , H01L29/66
CPC分类号： H01L29/7813 , H01L29/0634 , H01L29/41766 , H01L29/66712 , H01L29/7825 , H01L29/0653 , H01L29/66704
摘要： A semiconductor device includes: a substrate having a groove formed on a main surface; a drift region of a first conductivity type, the drift region having a portion disposed at a bottom part; a well region of a second conductivity type, the well region being disposed in one sidewall to be connected to the drift region; a first semiconductor region of the first conductivity type, the first semiconductor region being disposed on a surface of the well region in the sidewall to be away from the drift region; a second semiconductor region of the first conductivity type, the second semiconductor region being disposed to be opposed to the well region via the drift region; and a gate electrode opposed to the well region, the gate electrode being disposed in a gate trench that has an opening extending over the upper surfaces of the well region and the first semiconductor region.
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公开(公告)号：US11756994B2
公开(公告)日：2023-09-12
申请号：US17944853
申请日：2022-09-14
发明人： Toshiharu Marui , Tetsuya Hayashi , Keiichiro Numakura , Wei Ni , Ryota Tanaka , Keisuke Takemoto
IPC分类号： H01L29/06 , H01L21/04 , H01L21/76 , H01L21/761 , H01L29/16
CPC分类号： H01L29/0634 , H01L21/046 , H01L21/761 , H01L21/7602 , H01L29/1608
摘要： A semiconductor device includes a semiconductor base body, and a first main electrode and a second main electrode provided on the semiconductor base body. The semiconductor base body includes a drift region of a first conductivity type through which a main current flows, a column region of a second conductivity type arranged adjacent to the drift region in parallel to a current passage of the main current, a second electrode-connection region of the first conductivity type electrically connected to the second main electrode, and a low-density electric-field relaxation region of the first conductivity type having a lower impurity concentration than the drift region and arranged between the second electrode-connection region and the column region.
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公开(公告)号：US11996442B2
公开(公告)日：2024-05-28
申请号：US17944844
申请日：2022-09-14
发明人： Toshiharu Marui , Tetsuya Hayashi , Keiichiro Numakura , Wei Ni , Ryota Tanaka , Keisuke Takemoto
IPC分类号： H01L29/06 , H01L21/04 , H01L21/76 , H01L21/761 , H01L29/16
CPC分类号： H01L29/0634 , H01L21/046 , H01L21/7602 , H01L21/761 , H01L29/1608
摘要： A semiconductor device includes a semiconductor base body, and a first main electrode and a second main electrode provided on the semiconductor base body. The semiconductor base body includes a drift region of a first conductivity type through which a main current flows, a column region of a second conductivity type arranged adjacent to the drift region in parallel to a current passage of the main current, a second electrode-connection region of the first conductivity type electrically connected to the second main electrode, and a low-density electric-field relaxation region of the first conductivity type having a lower impurity concentration than the drift region and arranged between the second electrode-connection region and the column region.
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公开(公告)号：US11251300B2
公开(公告)日：2022-02-15
申请号：US17047438
申请日：2018-04-19
发明人： Wei Ni , Toshiharu Marui , Ryota Tanaka , Tetsuya Hayashi , Shigeharu Yamagami , Keiichiro Numakura , Keisuke Takemoto , Yasuaki Hayami
IPC分类号： H01L29/78 , H01L29/06 , H01L29/10 , H01L29/66 , H01L29/417 , H01L29/08 , H01L29/423 , H01L21/04
摘要： A semiconductor device includes: a substrate; a drift region disposed on a principal surface of the substrate; a first well region extending from a second principal surface of the drift region in a direction perpendicular to the second principal surface and having a bottom portion; a second well region being in contact with the bottom portion and disposed at a portion inside the substrate located below the bottom portion; and a source region extending in a perpendicular direction from a region of the second principal surface provided with the first well region, and reaching the second well region. In a direction parallel to the second principal surface and oriented from a source electrode to a drain electrode, a distance of the second well region in contact with a gate insulating film is shorter than a distance of the first well region in contact with the gate insulating film.
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公开(公告)号：US11881526B2
公开(公告)日：2024-01-23
申请号：US18035890
申请日：2020-11-09
发明人： Toshiharu Marui , Tetsuya Hayashi , Keiichiro Numakura , Wei Ni , Ryota Tanaka , Yuichi Iwasaki
CPC分类号： H01L29/7816 , H01L29/0878 , H01L29/1608 , H01L29/66681
摘要： A semiconductor device includes: a substrate; a source region formed on a main surface of the substrate; a well region electrically connected to the source region; a drift region in contact with the well region; a drain region in contact with the drift region; a first electrode electrically connected to the source region; a second electrode electrically connected to the drain region; a third electrode formed in contact with the source region, the well region, and the drift region through an insulating film; and a parasitic capacitance reduction region formed in contact with the source region and in contact with the third electrode through the insulating film and having a higher resistance value than that of the source region.
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公开(公告)号：US20230411516A1
公开(公告)日：2023-12-21
申请号：US18035890
申请日：2020-11-09
发明人： Toshiharu Marui , Tetsuya Hayashi , Keiichiro Numakura , Wei Ni , Ryota Tanaka , Yuichi Iwasaki
CPC分类号： H01L29/7816 , H01L29/66681 , H01L29/0878 , H01L29/1608
摘要： A semiconductor device includes: a substrate; a source region formed on a main surface of the substrate; a well region electrically connected to the source region; a drift region in contact with the well region; a drain region in contact with the drift region; a first electrode electrically connected to the source region; a second electrode electrically connected to the drain region; a third electrode formed in contact with the source region, the well region, and the drift region through an insulating film; and a parasitic capacitance reduction region formed in contact with the source region and in contact with the third electrode through the insulating film and having a higher resistance value than that of the source region.
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公开(公告)号：US11664466B2
公开(公告)日：2023-05-30
申请号：US17263617
申请日：2018-08-01
发明人： Toshiharu Marui , Tetsuya Hayashi , Keiichiro Numakura , Wei Ni , Ryota Tanaka
CPC分类号： H01L29/945 , H01L28/91 , H01L29/66181 , H01L25/074
摘要： A semiconductor device includes: a conductive semiconductor substrate in which a trench is formed on the first main surface; a plurality of conductive layers, each of which is either a first conductive layer or a second conductive layer, which are laminated on one another along a surface normal direction of a side surface of the trench; and dielectric layers arranged between a conductive layer closest to the side surface of the trench among the plurality of conductive layers and the side surface of the trench, and between the plurality of corresponding conductive layers. The first conductive layer is electrically insulated from the semiconductor substrate, and the semiconductor substrate that electrically connects to the second conductive layer inside the trench electrically connects to the second electrode.
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10.发明授权公开(公告)号：US10886401B2
公开(公告)日：2021-01-05
申请号：US16305170
申请日：2016-05-30
发明人： Wei Ni , Tetsuya Hayashi , Yasuaki Hayami , Ryota Tanaka
IPC分类号： H01L29/78 , H01L29/06 , H01L29/08 , H01L29/423 , H01L29/66 , H01L21/8234 , H01L29/16
摘要： A semiconductor device includes: a substrate; a drift region formed on a main surface of the substrate; a well region formed in a main surface of the drift region; a source region formed in the well region; a gate groove formed from the main surface of the drift region in a perpendicular direction while being in contact with the source region, the well region, and the drift region; a drain region formed in the main surface of the drift region; a gate electrode formed on a surface of the gate groove with a gate insulating film interposed therebetween; a protection region formed on a surface of the gate insulating film facing the drain region; and a connection region formed in contact with the well region and the protection region.
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