公开(公告)号：US11881526B2

公开(公告)日：2024-01-23

申请号：US18035890

申请日：2020-11-09

申请人： Nissan Motor Co., Ltd. ,  RENAULT S.A.S.

发明人： Toshiharu Marui ,  Tetsuya Hayashi ,  Keiichiro Numakura ,  Wei Ni ,  Ryota Tanaka ,  Yuichi Iwasaki

IPC分类号： H01L29/78 ,  H01L29/16 ,  H01L29/08 ,  H01L29/66

CPC分类号： H01L29/7816 ,  H01L29/0878 ,  H01L29/1608 ,  H01L29/66681

摘要： A semiconductor device includes: a substrate; a source region formed on a main surface of the substrate; a well region electrically connected to the source region; a drift region in contact with the well region; a drain region in contact with the drift region; a first electrode electrically connected to the source region; a second electrode electrically connected to the drain region; a third electrode formed in contact with the source region, the well region, and the drift region through an insulating film; and a parasitic capacitance reduction region formed in contact with the source region and in contact with the third electrode through the insulating film and having a higher resistance value than that of the source region.

公开(公告)号：US12068411B2

公开(公告)日：2024-08-20

申请号：US17040631

申请日：2018-03-26

申请人： NISSAN MOTOR CO., LTD. ,  RENAULT S.A.S.

发明人： Toshiharu Marui ,  Tetsuya Hayashi ,  Keiichiro Numakura ,  Wei Ni ,  Ryota Tanaka ,  Keisuke Takemoto

IPC分类号： H01L29/78 ,  H01L29/06 ,  H01L29/417 ,  H01L29/66

CPC分类号： H01L29/7813 ,  H01L29/0634 ,  H01L29/41766 ,  H01L29/66712 ,  H01L29/7825 ,  H01L29/0653 ,  H01L29/66704

摘要： A semiconductor device includes: a substrate having a groove formed on a main surface; a drift region of a first conductivity type, the drift region having a portion disposed at a bottom part; a well region of a second conductivity type, the well region being disposed in one sidewall to be connected to the drift region; a first semiconductor region of the first conductivity type, the first semiconductor region being disposed on a surface of the well region in the sidewall to be away from the drift region; a second semiconductor region of the first conductivity type, the second semiconductor region being disposed to be opposed to the well region via the drift region; and a gate electrode opposed to the well region, the gate electrode being disposed in a gate trench that has an opening extending over the upper surfaces of the well region and the first semiconductor region.

公开(公告)号：US11756994B2

公开(公告)日：2023-09-12

申请号：US17944853

申请日：2022-09-14

申请人： NISSAN MOTOR CO., LTD. ,  RENAULT s.a.s.

发明人： Toshiharu Marui ,  Tetsuya Hayashi ,  Keiichiro Numakura ,  Wei Ni ,  Ryota Tanaka ,  Keisuke Takemoto

IPC分类号： H01L29/06 ,  H01L21/04 ,  H01L21/76 ,  H01L21/761 ,  H01L29/16

CPC分类号： H01L29/0634 ,  H01L21/046 ,  H01L21/761 ,  H01L21/7602 ,  H01L29/1608

摘要： A semiconductor device includes a semiconductor base body, and a first main electrode and a second main electrode provided on the semiconductor base body. The semiconductor base body includes a drift region of a first conductivity type through which a main current flows, a column region of a second conductivity type arranged adjacent to the drift region in parallel to a current passage of the main current, a second electrode-connection region of the first conductivity type electrically connected to the second main electrode, and a low-density electric-field relaxation region of the first conductivity type having a lower impurity concentration than the drift region and arranged between the second electrode-connection region and the column region.

公开(公告)号：US20230411516A1

公开(公告)日：2023-12-21

申请号：US18035890

申请日：2020-11-09

申请人： Nissan Motor Co., Ltd. ,  RENAULT S.A.S.

发明人： Toshiharu Marui ,  Tetsuya Hayashi ,  Keiichiro Numakura ,  Wei Ni ,  Ryota Tanaka ,  Yuichi Iwasaki

IPC分类号： H01L29/78 ,  H01L29/66 ,  H01L29/08 ,  H01L29/16

CPC分类号： H01L29/7816 ,  H01L29/66681 ,  H01L29/0878 ,  H01L29/1608

摘要： A semiconductor device includes: a substrate; a source region formed on a main surface of the substrate; a well region electrically connected to the source region; a drift region in contact with the well region; a drain region in contact with the drift region; a first electrode electrically connected to the source region; a second electrode electrically connected to the drain region; a third electrode formed in contact with the source region, the well region, and the drift region through an insulating film; and a parasitic capacitance reduction region formed in contact with the source region and in contact with the third electrode through the insulating film and having a higher resistance value than that of the source region.

公开(公告)号：US11664466B2

公开(公告)日：2023-05-30

申请号：US17263617

申请日：2018-08-01

申请人： NISSAN MOTOR CO., LTD. ,  RENAULT S.A.S.

发明人： Toshiharu Marui ,  Tetsuya Hayashi ,  Keiichiro Numakura ,  Wei Ni ,  Ryota Tanaka

IPC分类号： H01L29/94 ,  H01L29/66 ,  H01L49/02 ,  H01L25/07

CPC分类号： H01L29/945 ,  H01L28/91 ,  H01L29/66181 ,  H01L25/074

摘要： A semiconductor device includes: a conductive semiconductor substrate in which a trench is formed on the first main surface; a plurality of conductive layers, each of which is either a first conductive layer or a second conductive layer, which are laminated on one another along a surface normal direction of a side surface of the trench; and dielectric layers arranged between a conductive layer closest to the side surface of the trench among the plurality of conductive layers and the side surface of the trench, and between the plurality of corresponding conductive layers. The first conductive layer is electrically insulated from the semiconductor substrate, and the semiconductor substrate that electrically connects to the second conductive layer inside the trench electrically connects to the second electrode.

公开(公告)号：US11557674B2

公开(公告)日：2023-01-17

申请号：US17262001

申请日：2018-07-27

申请人： NISSAN MOTOR CO., LTD. ,  RENAULT S.A.S.

发明人： Toshiharu Marui ,  Tetsuya Hayashi ,  Keiichiro Numakura ,  Wei Ni ,  Ryota Tanaka ,  Keisuke Takemoto

IPC分类号： H01L29/10 ,  H01L29/78 ,  H01L29/08 ,  H01L29/16 ,  H01L29/423 ,  H01L29/66

摘要： A semiconductor device includes: a substrate (10); a semiconductor layer (20) disposed on a main surface of this substrate (10); and a first main electrode (30) and a second main electrode (40), which are disposed on the substrate (10) separately from each other with the semiconductor layer (20) sandwiched therebetween and are individually end portions of a current path of a main current flowing in an on-state. The semiconductor layer (20) includes: a first conductivity-type drift region (21) through which a main current flows; a second conductivity-type column region (22) that is disposed inside the drift region (21) and extends in parallel to a current path; and an electric field relaxation region (23) that is disposed in at least a part between the drift region (21) and the column region (22) and is either a low-concentration region in which an impurity concentration is lower than in the same conductivity-type adjacent region or a non-doped region.

公开(公告)号：US11476326B2

公开(公告)日：2022-10-18

申请号：US17423966

申请日：2019-01-21

申请人： NISSAN MOTOR CO., LTD. ,  RENAULT s.a.s.

发明人： Toshiharu Marui ,  Tetsuya Hayashi ,  Keiichiro Numakura ,  Wei Ni ,  Ryota Tanaka ,  Keisuke Takemoto

IPC分类号： H01L21/04 ,  H01L21/76 ,  H01L29/16 ,  H01L29/66 ,  H01L29/78 ,  H01L29/06 ,  H01L21/761

摘要： A semiconductor device includes a semiconductor base body, and a first main electrode and a second main electrode provided on the semiconductor base body. The semiconductor base body includes a drift region of a first conductivity type through which a main current flows, a column region of a second conductivity type arranged adjacent to the drift region in parallel to a current passage of the main current, a second electrode-connection region of the first conductivity type electrically connected to the second main electrode, and a low-density electric-field relaxation region of the first conductivity type having a lower impurity concentration than the drift region and arranged between the second electrode-connection region and the column region.

公开(公告)号：US11996442B2

公开(公告)日：2024-05-28

申请号：US17944844

申请日：2022-09-14

申请人： NISSAN MOTOR CO., LTD. ,  RENAULT s.a.s.

发明人： Toshiharu Marui ,  Tetsuya Hayashi ,  Keiichiro Numakura ,  Wei Ni ,  Ryota Tanaka ,  Keisuke Takemoto

IPC分类号： H01L29/06 ,  H01L21/04 ,  H01L21/76 ,  H01L21/761 ,  H01L29/16

CPC分类号： H01L29/0634 ,  H01L21/046 ,  H01L21/7602 ,  H01L21/761 ,  H01L29/1608

摘要： A semiconductor device includes a semiconductor base body, and a first main electrode and a second main electrode provided on the semiconductor base body. The semiconductor base body includes a drift region of a first conductivity type through which a main current flows, a column region of a second conductivity type arranged adjacent to the drift region in parallel to a current passage of the main current, a second electrode-connection region of the first conductivity type electrically connected to the second main electrode, and a low-density electric-field relaxation region of the first conductivity type having a lower impurity concentration than the drift region and arranged between the second electrode-connection region and the column region.

公开(公告)号：US11973108B2

公开(公告)日：2024-04-30

申请号：US18039610

申请日：2020-12-01

申请人： NISSAN MOTOR CO., LTD. ,  RENAULT s.a.s.

发明人： Wei Ni ,  Tetsuya Hayashi ,  Keiichiro Numakura ,  Toshiharu Marui ,  Ryouta Tanaka ,  Yuichi Iwasaki

IPC分类号： H01L29/06 ,  H01L29/16 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L29/0638 ,  H01L29/1608 ,  H01L29/4236 ,  H01L29/66704 ,  H01L29/7835

摘要： A semiconductor device includes: a drift region that is arranged on a main surface of a substrate, and has a higher impurity concentration than the substrate; a first well region that is connected to the drift region; and a second well region that is arranged adjacent to the first well region and faces the drift region. The second well region has a higher impurity concentration than the first well region. A distance between the source region that faces the drift region via the first well region and the drift region is greater than a distance between the second well region and the drift region, in a direction parallel to the main surface of the substrate. A depletion layer extending from the second well region reaches the drift region.

公开(公告)号：US11251300B2

公开(公告)日：2022-02-15

申请号：US17047438

申请日：2018-04-19

申请人： NISSAN MOTOR CO., LTD. ,  RENAULT S.A.S.

发明人： Wei Ni ,  Toshiharu Marui ,  Ryota Tanaka ,  Tetsuya Hayashi ,  Shigeharu Yamagami ,  Keiichiro Numakura ,  Keisuke Takemoto ,  Yasuaki Hayami

IPC分类号： H01L29/78 ,  H01L29/06 ,  H01L29/10 ,  H01L29/66 ,  H01L29/417 ,  H01L29/08 ,  H01L29/423 ,  H01L21/04

摘要： A semiconductor device includes: a substrate; a drift region disposed on a principal surface of the substrate; a first well region extending from a second principal surface of the drift region in a direction perpendicular to the second principal surface and having a bottom portion; a second well region being in contact with the bottom portion and disposed at a portion inside the substrate located below the bottom portion; and a source region extending in a perpendicular direction from a region of the second principal surface provided with the first well region, and reaching the second well region. In a direction parallel to the second principal surface and oriented from a source electrode to a drain electrode, a distance of the second well region in contact with a gate insulating film is shorter than a distance of the first well region in contact with the gate insulating film.