公开(公告)号：US09774067B2

公开(公告)日：2017-09-26

申请号：US14708838

申请日：2015-05-11

Applicant: NORTHROP GRUMMAN SYSTEMS CORPORATION

Inventor： Benjamin D. Poust ,  Michael Conrad Battung ,  Dino Ferizovic ,  Patty P. Chang-Chien

IPC: H01P1/14 ,  H01T4/08 ,  H01T4/16 ,  H03G11/00 ,  H01L23/60 ,  H01T19/04

CPC classification number: H01P1/14 ,  H01L23/60 ,  H01L2924/0002 ,  H01T4/08 ,  H01T4/16 ,  H01T19/04 ,  H03G11/002 ,  H03G11/004 ,  H01L2924/00

Abstract: A plasma power limiter fabricated using wafer-level fabrication techniques with other circuit elements. The power limiter includes a signal substrate having a first side and a second side, an input signal line formed on the first side, a signal transmission line formed on the second side and an output signal line formed on the first side. The power limiter also includes a ground substrate having a first side and a second side, and being bonded to the signal substrate to form a sealed cavity including an ionizable gas therebetween. The ground substrate includes a ground metal layer formed on the second side. A signal propagating on the input signal line at a power level greater than a threshold power level generates a voltage potential across the cavity that ionizes the gas and generates a plasma discharge, and limits power of the output signal coupled to the output signal line.