公开(公告)号：US09882000B2

公开(公告)日：2018-01-30

申请号：US15163375

申请日：2016-05-24

Applicant: NORTHROP GRUMMAN SYSTEMS CORPORATION

Inventor： Stephen J. Sarkozy ,  Yaochung Chen ,  Richard Lai

IPC: H01L29/49 ,  H01L29/06 ,  H01L29/22 ,  H01L29/423 ,  H01L29/40 ,  H01L29/66

CPC classification number: H01L29/0665 ,  H01L29/0657 ,  H01L29/22 ,  H01L29/401 ,  H01L29/42356 ,  H01L29/66522 ,  H01L29/7783

Abstract: A field effect transistor (FET) including a substrate, a plurality of semiconductor epitaxial layers deposited on the substrate, and a heavily doped gate layer deposited on the semiconductor layers. The FET also includes a plurality of castellation structures formed on the heavily doped gate layer and being spaced apart from each other, where each castellation structure includes at least one channel layer. A gate metal is deposited on the castellation structures and between the castellation structures to be in direct electrical contact with the heavily doped gate layer. A voltage potential applied to the gate metal structure modulates the at least one channel layer in each castellation structure from an upper, lower and side direction.