公开(公告)号：US09882000B2

公开(公告)日：2018-01-30

申请号：US15163375

申请日：2016-05-24

Applicant: NORTHROP GRUMMAN SYSTEMS CORPORATION

Inventor： Stephen J. Sarkozy ,  Yaochung Chen ,  Richard Lai

IPC: H01L29/49 ,  H01L29/06 ,  H01L29/22 ,  H01L29/423 ,  H01L29/40 ,  H01L29/66

CPC classification number: H01L29/0665 ,  H01L29/0657 ,  H01L29/22 ,  H01L29/401 ,  H01L29/42356 ,  H01L29/66522 ,  H01L29/7783

Abstract: A field effect transistor (FET) including a substrate, a plurality of semiconductor epitaxial layers deposited on the substrate, and a heavily doped gate layer deposited on the semiconductor layers. The FET also includes a plurality of castellation structures formed on the heavily doped gate layer and being spaced apart from each other, where each castellation structure includes at least one channel layer. A gate metal is deposited on the castellation structures and between the castellation structures to be in direct electrical contact with the heavily doped gate layer. A voltage potential applied to the gate metal structure modulates the at least one channel layer in each castellation structure from an upper, lower and side direction.

公开(公告)号：US09735545B1

公开(公告)日：2017-08-15

申请号：US15206041

申请日：2016-07-08

Applicant: NORTHROP GRUMMAN SYSTEMS CORPORATION

Inventor： Yaochung Chen ,  Vincent Gambin ,  Xianglin Zeng

IPC: H01S5/00 ,  H01S5/183 ,  H01S5/187 ,  H01S5/042 ,  H01S5/343

CPC classification number: H01S5/18369 ,  H01S5/183 ,  H01S5/18308 ,  H01S5/18341 ,  H01S5/18344 ,  H01S5/18377 ,  H01S5/34313

Abstract: A vertical cavity surface emitting laser (VCSEL) including a substrate and a bottom distributed Bragg reflector (DBR) having a plurality of layers deposited on the substrate. The VCSEL also includes a first charge confining layer deposited on the bottom DBR, an active region deposited on the first charge confining layer, and a second charge confining layer deposited on the active region. A current blocking layer is provided on the second charge confining layer, and a top epitaxial DBR including a plurality of top epitaxial DBR layers is deposited on the current blocking layer. A top electrode is deposited on the top epitaxial DBR, a bottom electrode is deposited on the bottom DBR and adjacent to the active region, and a top dielectric DBR is deposited on the top epitaxial DBR and the top electrode.