公开(公告)号：US11515688B2

公开(公告)日：2022-11-29

申请号：US16482915

申请日：2018-02-05

Applicant: NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： Bjorn Ove Myking Fimland ,  Helge Weman ,  Dingding Ren

IPC: H01L33/06 ,  H01L33/00 ,  H01L33/32 ,  H01L33/60 ,  H01S5/343 ,  H01S5/02 ,  H01S5/183 ,  H01S5/22 ,  H01S5/042 ,  H01L29/06

Abstract: A device, such as a light-emitting device, e.g. a laser device, comprising: a plurality of group III-V semiconductor NWs grown on one side of a graphitic substrate, preferably through the holes of an optional hole-patterned mask on said graphitic substrate; a first distributed Bragg reflector or metal mirror positioned substantially parallel to said graphitic substrate and positioned on the opposite side of said graphitic substrate to said NWs; optionally a second distributed Bragg reflector or metal mirror in contact with the top of at least a portion of said NWs; and wherein said NWs comprise aim-type doped region and a p-type doped region and optionally an intrinsic region there between.

公开(公告)号：US11239391B2

公开(公告)日：2022-02-01

申请号：US16604397

申请日：2018-04-10

Applicant: NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY (NTNU)

Inventor： Bjørn Ove Myking Fimland ,  Helge Weman ,  Dingding Ren

IPC: H01L33/30 ,  H01L33/00 ,  H01L33/06 ,  H01L33/24

Abstract: A composition of matter comprising at least one nanostructure grown epitaxially on an optionally doped β-Ga2O3 substrate, wherein said nanostructure comprises at least one group III-V compound.

公开(公告)号：US11450528B2

公开(公告)日：2022-09-20

申请号：US16456591

申请日：2019-06-28

Applicant: CRAYONANO AS ,  NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY (NTNU)

Inventor： Dong Chul Kim ,  Ida Marie Høiaas ,  Mazid Munshi ,  Bjørn Ove Fimland ,  Helge Weman ,  Dingding Ren ,  Dasa Dheeraj

IPC: H01L21/02

Abstract: A process for growing nanowires or nanopyramids comprising: (I) providing a graphitic substrate and depositing AlGaN, InGaN, AlN or AlGa(In)N on said graphitic substrate at an elevated temperature to form a buffer layer or nanoscale nucleation islands of said compounds; (II) growing a plurality of semiconducting group III-V nanowires or nanopyramids, preferably III-nitride nanowires or nanopyramids, on the said buffer layer or nucleation islands on the graphitic substrate, preferably via MOVPE or MBE.

公开(公告)号：US10714337B2

公开(公告)日：2020-07-14

申请号：US15749228

申请日：2016-08-01

Applicant: CRAYONANO AS ,  NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY (NTNU)

Inventor： Dong Chul Kim ,  Ida Marie Høiaas ,  Mazid Munshi ,  Bjørn Ove Fimland ,  Helge Weman ,  Dingding Ren ,  Dasa Dheeraj

IPC: H01L21/02

Abstract: A process for growing nanowires or nanopyramids comprising: (I) providing a graphitic substrate and depositing AlGaN, InGaN, AlN or AlGa(In)N on said graphitic substrate at an elevated temperature to form a buffer layer or nanoscale nucleation islands of said compounds; (II) growing a plurality of semiconducting group III-V nanowires or nanopyramids, preferably III-nitride nanowires or nanopyramids, on the said buffer layer or nucleation islands on the graphitic substrate, preferably via MOVPE or MBE.