公开(公告)号：US20190355868A1

公开(公告)日：2019-11-21

申请号：US16482915

申请日：2018-02-05

Applicant: NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： Bjorn Ove Myking FIMLAND ,  Heige WEMAN ,  Dtngding REN

IPC: H01L33/06 ,  H01L33/00 ,  H01L33/32 ,  H01L33/60 ,  H01S5/02 ,  H01S5/183 ,  H01S5/22 ,  H01S5/343

Abstract: A device, such as a light-emitting device, e.g. a laser device, comprising: a plurality of group III-V semiconductor NWs grown on one side of a graphitic substrate, preferably through the holes of an optional hole-patterned mask on said graphitic substrate; a first distributed Bragg reflector or metal mirror positioned substantially parallel to said graphitic substrate and positioned on the opposite side of said graphitic substrate to said NWs; optionally a second distributed Bragg reflector or metal mirror in contact with the top of at least a portion of said NWs; and wherein said NWs comprise aim-type doped region and a p-type doped region and optionally an intrinsic region there between.