公开(公告)号：US20150041862A1

公开(公告)日：2015-02-12

申请号：US14524365

申请日：2014-10-27

Applicant: NXP B.V.

Inventor： Johannes Josephus Theodorus Marinus DONKERS ,  Petrus Hubertus Cornelis MAGNEE ,  Blandine DURIEZ ,  Evelyne GRIDELET ,  Hans MERTENS ,  Tony VANHOUCKE

IPC: H01L29/737 ,  H01L29/45 ,  H01L29/10 ,  H01L29/161 ,  H01L29/165

CPC classification number: H01L29/7378 ,  H01L21/8249 ,  H01L27/0623 ,  H01L29/1004 ,  H01L29/161 ,  H01L29/165 ,  H01L29/456 ,  H01L29/66242

Abstract: Disclosed is a method of manufacturing an integrated circuit comprising a bipolar transistor, the method comprising providing a substrate (10) comprising a pair of first isolation regions (12) separated from each other by an active region (11) comprising a collector impurity said bipolar transistor; forming a base layer stack (14, 14′) over said substrate; forming a further stack of a migration layer (15) having a first migration temperature and an etch stop layer (20) over said base layer stack (14); forming a base contact layer (16) having a second migration temperature over the further stack, the second migration temperature being higher than the first migration temperature; etching an emitter window (28) in the base contact layer over the active region, said etching step terminating at the etch stop layer; at least partially removing the etch stop layer, thereby forming cavities (29) extending from the emitter window in between the base contact layer and the redistribution layer; and exposing the resultant structure to the first migration temperature in a hydrogen atmosphere, thereby filling the cavities with the migration layer material. An IC comprising such a bipolar transistor is also disclosed.

Abstract translation: 公开了一种制造包括双极晶体管的集成电路的方法，所述方法包括提供包括一对第一隔离区（12）的衬底（10），所述第一隔离区（12）通过包含集电极杂质的有源区（11）彼此分离，所述有源区 晶体管 在所述衬底上形成基层叠层（14,14'）; 在所述基层堆叠（14）上方形成具有第一迁移温度和蚀刻停止层（20）的迁移层（15）的另一叠层; 形成具有超过另一堆叠的第二迁移温度的基底接触层（16），所述第二迁移温度高于所述第一迁移温度; 在所述有源区上蚀刻所述基极接触层中的发射极窗口（28），所述蚀刻步骤终止于所述蚀刻停止层; 至少部分地去除所述蚀刻停止层，从而形成从所述基底接触层和所述再分布层之间的所述发射窗延伸的空腔（29） 并在氢气氛中将所得结构暴露于第一迁移温度，由此用迁移层材料填充空腔。 还公开了包括这种双极晶体管的IC。

公开(公告)号：US20140342527A1

公开(公告)日：2014-11-20

申请号：US14449522

申请日：2014-08-01

Applicant: NXP B.V.

Inventor： Peter Gerard STEENEKEN ,  Roel DAAMEN ,  Gerard KOOPS ,  Jan SONSKY ,  Evelyne GRIDELET ,  Coenraad Cornelis TAK

IPC: H01L21/762

CPC classification number: H01L21/76232 ,  H01L21/76224 ,  H01L21/823878

Abstract: An isolated semiconductor circuit comprising: a first sub-circuit and a second sub-circuit; a backend that includes an electrically isolating connector between the first and second sub-circuits; a lateral isolating trench between the semiconductor portions of the first and second sub-circuits, wherein the lateral isolating trench extends along the width of the semiconductor portions of the first and second sub-circuits, wherein one end of the isolating trench is adjacent the backend, and wherein the isolating trench is filled with an electrically isolating material.