-
公开(公告)号:US20150123732A1
公开(公告)日:2015-05-07
申请号:US14527968
申请日:2014-10-30
Applicant: NXP B.V.
Inventor: Gian Hoogzaad , Alexander Simin , Hasan Gui
CPC classification number: H03F1/26 , H03F1/22 , H03F1/226 , H03F3/191 , H03F3/193 , H03F3/50 , H03F2200/294 , H03F2200/451 , H04W88/08
Abstract: A two-stage RF amplifier is provided. The first stage is a common-emitter transistor arrangement with a purely reactive degeneration impedance and an output impedance with a reactive component matched in frequency response to the degeneration impedance. The second stage is a buffer amplifier. The first amplifier can be designed for high gain which is flat over frequency by virtue of the reactive degeneration impedance. The first amplifier provides input matching, and the buffer provides output matching, with decoupling between the input and output.
Abstract translation: 提供两级RF放大器。 第一级是具有纯反应性退化阻抗的共发射极晶体管布置,并且具有与对退化阻抗的频率响应匹配的无功分量的输出阻抗。 第二级是缓冲放大器。 第一放大器可以设计用于通过反应性退化阻抗在频率上平坦的高增益。 第一个放大器提供输入匹配,并且缓冲器提供输出匹配和输入和输出之间的去耦。
-
公开(公告)号:US09419563B2
公开(公告)日:2016-08-16
申请号:US14527968
申请日:2014-10-30
Applicant: NXP B.V.
Inventor: Gian Hoogzaad , Alexander Simin , Hasan Gui
CPC classification number: H03F1/26 , H03F1/22 , H03F1/226 , H03F3/191 , H03F3/193 , H03F3/50 , H03F2200/294 , H03F2200/451 , H04W88/08
Abstract: A two-stage RF amplifier is provided. The first stage is a common-emitter transistor arrangement with a purely reactive degeneration impedance and an output impedance with a reactive component matched in frequency response to the degeneration impedance. The second stage is a buffer amplifier. The first amplifier can be designed for high gain which is flat over frequency by virtue of the reactive degeneration impedance. The first amplifier provides input matching, and the buffer provides output matching, with decoupling between the input and output.
Abstract translation: 提供两级RF放大器。 第一级是具有纯反应性退化阻抗的共发射极晶体管布置,并且具有与对退化阻抗的频率响应匹配的无功分量的输出阻抗。 第二级是缓冲放大器。 第一放大器可以设计用于通过反应性退化阻抗在频率上平坦的高增益。 第一个放大器提供输入匹配,并且缓冲器提供输出匹配和输入和输出之间的去耦。
-