公开(公告)号：US20150179735A1

公开(公告)日：2015-06-25

申请号：US14575001

申请日：2014-12-18

Applicant: NXP B.V.

Inventor： Michael Antoine Armand in't Zandt ,  Peter Gerard Steeneken

IPC: H01L29/06 ,  H01L21/762

CPC classification number: H01L29/0649 ,  H01L21/76224 ,  H01L21/76283 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/0653 ,  H01L29/7809 ,  H01L29/7812 ,  H01L29/7813

Abstract: The invention relates to a semiconductor device and an associated method for fabricating the semiconductor device. The device comprises: a substrate having a contact surface and a back surface separated by a total distance; a vertical device formed in the substrate and having first and second terminals on the contact surface; an isolation trench extending the total distance through the substrate between the contact surface and the back surface to electrically isolate the vertical device; and a terminal separation trench extending from the contact surface into the substrate and arranged to separate and define an electrical conduction path between the first and second terminals of the vertical device.

Abstract translation: 本发明涉及一种用于制造半导体器件的半导体器件和相关方法。 该装置包括：具有接触面和分离总距离的背面的基板; 垂直装置，其形成在所述基板中，并且在所述接触表面上具有第一和第二端子; 隔离沟槽，其在接触表面和背面之间延伸通过衬底的总距离，以电隔离垂直装置; 以及从所述接触表面延伸到所述衬底中并且被布置成分离并限定所述垂直装置的所述第一和第二端子之间的导电路径的端子分离沟槽。

公开(公告)号：US09171810B2

公开(公告)日：2015-10-27

申请号：US14086601

申请日：2013-11-21

Applicant: NXP B.V.

Inventor： Michael Antoine Armand in't Zandt ,  Viet Hoang Nguyen

IPC: H01L23/00 ,  H01L23/535 ,  H01L21/768 ,  G06F21/55 ,  H04L9/32

CPC classification number: H01L23/564 ,  G06F21/55 ,  G06F21/73 ,  H01L21/76838 ,  H01L23/535 ,  H01L23/57 ,  H01L23/576 ,  H01L2924/0002 ,  H04L9/0866 ,  H04L9/3278 ,  H01L2924/00

Abstract: An electronic device incorporating a randomized interconnection layer. In one example, the device includes a randomized interconnection layer having a randomized conductive pattern formed by etching of a heterogeneous layer; and a sensing circuit, electrically coupled to the randomized interconnection layer to detect the randomized conductive pattern. In another example, a method of fabricating the device includes forming a set of electrodes proximate to a silicon substrate; depositing a heterogeneous layer of elements onto the substrate; etching the heterogeneous layer to form a randomized conductive pattern; and electrically coupling the electrodes to a sensing circuit and the randomized conductive pattern.

Abstract translation: 一种并入随机化互连层的电子装置。 在一个示例中，该装置包括具有通过蚀刻异质层形成的随机化导电图案的随机化互连层; 以及感测电路，电耦合到随机化互连层以检测随机化导电图案。 在另一示例中，制造该器件的方法包括：形成一组靠近硅衬底的电极; 将不均匀的元素层沉积到所述衬底上; 蚀刻异质层以形成随机化的导电图案; 并且将电极电耦合到感测电路和随机化导电图案。