公开(公告)号：US20200343368A1

公开(公告)日：2020-10-29

申请号：US16848195

申请日：2020-04-14

Applicant: NXP B.V.

Inventor： Viet Dinh ,  Guido Sasse ,  Paul Grudowski

IPC: H01L29/66 ,  H01L21/8238

Abstract: A semiconductor device is disclosed, a substrate structure; a raised source region; a raised drain region; a separation region disposed laterally between the raised source region and the raised drain region; a gate structure, disposed between the raised source region and the raised drain region and above a part of the separation region, the gate structure being spaced apart from the drain region and defining a drain extension region therebetween; a dummy gate structure in the drain extension region; an epitaxial layer, disposed above and in contact with the substrate structure and forming the raised source region, the raised drain region, and a raised region between the gate structure and the dummy gate structure, wherein the raised region between the gate structure and the dummy gate structure is relatively lightly doped to a conductivity of a second conductivity type which is opposite the first conductivity type.

公开(公告)号：US09111987B2

公开(公告)日：2015-08-18

申请号：US14259550

申请日：2014-04-23

Applicant: NXP B.V.

Inventor： Evelyne Gridelet ,  Johannes Donkers ,  Petrus Hubertus Cornelis Magnee ,  Viet Dinh ,  Tony Vanhoucke

IPC: H01L21/331 ,  H01L27/082 ,  H01L29/70 ,  H01L29/732 ,  H01L29/40 ,  H01L29/66 ,  H01L29/737

CPC classification number: H01L29/732 ,  H01L29/407 ,  H01L29/66242 ,  H01L29/66272 ,  H01L29/7378

Abstract: Consistent with an example embodiment, a bipolar transistor comprises an emitter region vertically separated from a collector region in a substrate by a base region. The bipolar transistor further comprises a field plate electrically connected to the emitter region; the field plate extends from the emitter region along the base region into the collector region and the field plate is laterally electrically insulated from the base region and the collector region by a spacer. The spacer comprises an electrically isolating material that includes a silicon nitride layer and is vertically electrically isolated from the substrate by a further electrically isolating material.

Abstract translation: 与示例实施例一致，双极晶体管包括通过基极区域与衬底中的集电极区域垂直分离的发射极区域。 双极晶体管还包括电连接到发射极区的场板; 场板沿着基极区域从发射极区域延伸到集电极区域，并且场板通过间隔物与基极区域和集电极区域横向电绝缘。 间隔物包括电绝缘材料，其包括氮化硅层，并通过另外的电绝缘材料与衬底垂直电隔离。

公开(公告)号：US20140327110A1

公开(公告)日：2014-11-06

申请号：US14259550

申请日：2014-04-23

Applicant: NXP B.V.

Inventor： Evelyne Gridelet ,  Johannes Donkers ,  Petrus Hubertus Cornelis Magnee ,  Viet Dinh ,  Tony Vanhoucke

IPC: H01L29/732 ,  H01L29/66

CPC classification number: H01L29/732 ,  H01L29/407 ,  H01L29/66242 ,  H01L29/66272 ,  H01L29/7378

Abstract: Consistent with an example embodiment, a bipolar transistor comprises an emitter region vertically separated from a collector region in a substrate by a base region. The bipolar transistor further comprises a field plate electrically connected to the emitter region; the field plate extends from the emitter region along the base region into the collector region and the field plate is laterally electrically insulated from the base region and the collector region by a spacer. The spacer comprises an electrically isolating material that includes a silicon nitride layer and is vertically electrically isolated from the substrate by a further electrically isolating material.

Abstract translation: 与示例实施例一致，双极晶体管包括通过基极区域与衬底中的集电极区域垂直分离的发射极区域。 双极晶体管还包括电连接到发射极区的场板; 场板沿着基极区域从发射极区域延伸到集电极区域，并且场板通过间隔物与基极区域和集电极区域横向电绝缘。 间隔物包括电绝缘材料，其包括氮化硅层，并通过另外的电绝缘材料与衬底垂直电隔离。

公开(公告)号：US11222961B2

公开(公告)日：2022-01-11

申请号：US16848195

申请日：2020-04-14

Applicant: NXP B.V.

Inventor： Viet Dinh ,  Guido Sasse ,  Paul Grudowski

IPC: H01L29/772 ,  H01L21/8238 ,  H01L29/66 ,  H01L29/78

Abstract: A semiconductor device is disclosed, a substrate structure; a raised source region; a raised drain region; a separation region disposed laterally between the raised source region and the raised drain region; a gate structure, disposed between the raised source region and the raised drain region and above a part of the separation region, the gate structure being spaced apart from the drain region and defining a drain extension region therebetween; a dummy gate structure in the drain extension region; an epitaxial layer, disposed above and in contact with the substrate structure and forming the raised source region, the raised drain region, and a raised region between the gate structure and the dummy gate structure, wherein the raised region between the gate structure and the dummy gate structure is relatively lightly doped to a conductivity of a second conductivity type which is opposite the first conductivity type.