Sensing field effect transistor devices, systems in which they are incorporated, and methods of their fabrication

    公开(公告)号:US10107779B2

    公开(公告)日:2018-10-23

    申请号:US15907126

    申请日:2018-02-27

    Applicant: NXP USA, Inc.

    Abstract: Embodiments of sensing devices include one or more integrated circuit (IC) die, a housing, and a fluid barrier material. Each IC die includes an electrode-bearing surface and a contact surface. One of the die includes an SFET with a sensing electrode proximate to the electrode-bearing surface. The same or a different die includes a reference electrode proximate to the electrode-bearing surface. The die(s) also include IC contacts at the contact surface(s), and conductive structures coupled between the SFET, the reference electrode, and the IC contacts. The housing includes a mounting surface, and housing contacts formed at the mounting surface. The IC contacts are coupled to the housing contacts. The fluid barrier material is positioned between the mounting surface and the IC die. The fluid barrier material provides a fluid barrier between the IC and housing contacts and a space that encompasses the sensing electrode and the reference electrode.

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