公开(公告)号：US09790089B2

公开(公告)日：2017-10-17

申请号：US15448801

申请日：2017-03-03

申请人： NXP USA, INC.

发明人： Chad S. Dawson ,  Stephen R. Hooper ,  Fengyuan Li ,  Arvind S. Salian

IPC分类号： B81C1/00 ,  B81B7/00

CPC分类号： B81C1/00309 ,  B81B7/0061 ,  B81B2201/0264 ,  B81B2203/0118 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81B2203/0392 ,  B81B2207/012 ,  B81B2207/097 ,  B81C1/00865 ,  B81C2203/0109 ,  H01L2224/48145 ,  H01L2924/181 ,  H01L2924/00012

摘要： A MEMS sensor package comprises a MEMS die that includes a substrate having a sensor formed thereon and a cap layer coupled to the substrate. The cap layer has a cavity overlying a substrate region at which the sensor resides. A port extends between the cavity and a side wall of the MEMS die and enables admittance of fluid into the cavity. Fabrication methodology entails providing a substrate structure having sensors formed thereon, providing a cap layer structure having inwardly extending cavities, and forming a channel between pairs of the cavities. The cap layer structure is coupled with the substrate structure and each channel is interposed between a pair of cavities. A singulation process produces a pair of sensor packages, each having a port formed by splitting the channel, where the port is exposed during singulation and extends between its respective cavity and side wall of the sensor package.

公开(公告)号：US20180072569A1

公开(公告)日：2018-03-15

申请号：US15264846

申请日：2016-09-14

申请人： GM GLOBAL TECHNOLOGY OPERATIONS LLC

发明人： Stephen A. Berggren

IPC分类号： B81C1/00

CPC分类号： B81C1/0088 ,  B81B7/02 ,  B81B2201/0292 ,  B81C1/00825 ,  B81C1/00865 ,  B81C1/00888 ,  B81C1/00904 ,  B81C99/0045 ,  B81C2201/056 ,  G01L1/00 ,  H01L41/0926 ,  H01L41/094 ,  H01L41/1136

摘要： A method of strain gauge fabrication is presented herein. The method includes: providing a first substrate having a cavity side; providing a second substrate having a semiconductor side; positioning the second substrate in relation to the first substrate such that the semiconductor side and the cavity side are contactable; processing the second substrate such that the first and second substrates are substantially joined via the semiconductor side and the cavity side; and etching the second substrate to define a strain gauge cantilevered over the cavity side of the first substrate.

公开(公告)号：US20170174509A1

公开(公告)日：2017-06-22

申请号：US15448801

申请日：2017-03-03

申请人： NXP USA, INC.

发明人： Chad S. Dawson ,  Stephen R. Hooper ,  Fengyuan Li ,  Arvind S. Salian

IPC分类号： B81C1/00 ,  B81B7/00

CPC分类号： B81C1/00309 ,  B81B7/0061 ,  B81B2201/0264 ,  B81B2203/0118 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81B2203/0392 ,  B81B2207/012 ,  B81B2207/097 ,  B81C1/00865 ,  B81C2203/0109 ,  H01L2224/48145 ,  H01L2924/181 ,  H01L2924/00012

摘要： A MEMS sensor package comprises a MEMS die that includes a substrate having a sensor formed thereon and a cap layer coupled to the substrate. The cap layer has a cavity overlying a substrate region at which the sensor resides. A port extends between the cavity and a side wall of the MEMS die and enables admittance of fluid into the cavity. Fabrication methodology entails providing a substrate structure having sensors formed thereon, providing a cap layer structure having inwardly extending cavities, and forming a channel between pairs of the cavities. The cap layer structure is coupled with the substrate structure and each channel is interposed between a pair of cavities. A singulation process produces a pair of sensor packages, each having a port formed by splitting the channel, where the port is exposed during singulation and extends between its respective cavity and side wall of the sensor package.

公开(公告)号：US5668033A

公开(公告)日：1997-09-16

申请号：US648968

申请日：1996-05-17

申请人： Fumio Ohara ,  Shinji Yoshihara ,  Katuhiko Kanamori ,  Takashi Kurahashi

发明人： Fumio Ohara ,  Shinji Yoshihara ,  Katuhiko Kanamori ,  Takashi Kurahashi

IPC分类号： H01L29/84 ,  B29C43/36 ,  B81C1/00 ,  G01P1/02 ,  G01P15/08 ,  G01P15/12 ,  H01L21/301 ,  H01L21/822 ,  H01L23/053 ,  H01L23/10 ,  H01L27/04 ,  H01L21/304

CPC分类号： B29C43/36 ,  B81C1/00301 ,  B81C1/00865 ,  G01P1/023 ,  G01P15/0802 ,  G01P15/124 ,  H01L23/053 ,  H01L23/10 ,  B29C2043/023 ,  B29C33/0022 ,  B81B2207/093 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01039 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/16152 ,  H01L2924/16235 ,  H01L2924/181 ,  H01L2924/3025 ,  Y10S148/012

摘要： On a silicon wafer there is formed a movable gate MOS transistor (sensing element: functional element). A bonding frame consisting of a silicon thin film is patterned around an element formation region on the surface of the silicon wafer. On a cap forming silicon wafer there is projectively provided a leg portion on the bottom surface of which a bonding layer consisting of a gold film is formed. The cap forming silicon wafer is disposed on the silicon wafer, whereupon heating with respect thereto is performed at a temperature equal to higher than a gold/silicon eutectic temperature to thereby make bondage between the bonding frame of the silicon wafer and the bonding layer of the cap forming silicon wafer. Thereafter, the both wafers are diced in chip units.

摘要翻译： 在硅晶片上形成可移动栅极MOS晶体管（感测元件：功能元件）。 由硅薄膜构成的接合框架围绕硅晶片的表面上的元件形成区域进行图案化。 在形成硅晶片的盖上，在底面上突出设置有腿部，形成由金膜构成的接合层。 盖形成硅晶片设置在硅晶片上，于是相对于其加热在高于金/硅共晶温度的温度下进行，从而使硅晶片的接合框架和接合层之间的粘结 盖形成硅晶片。 此后，两片晶片以芯片单元切割。

公开(公告)号：US20170081179A1

公开(公告)日：2017-03-23

申请号：US14861550

申请日：2015-09-22

申请人： FREESCALE SEMICONDUCTOR, INC.

发明人： CHAD S. DAWSON ,  STEPHEN R. HOOPER ,  FENGYUAN LI ,  ARVIND S. SALIAN

IPC分类号： B81B7/00 ,  B81C1/00

CPC分类号： B81C1/00309 ,  B81B7/0061 ,  B81B2201/0264 ,  B81B2203/0118 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81B2203/0392 ,  B81B2207/012 ,  B81B2207/097 ,  B81C1/00865 ,  B81C2203/0109 ,  H01L2224/48145 ,  H01L2924/181 ,  H01L2924/00012

摘要： A MEMS sensor package comprises a MEMS die that includes a substrate having a sensor formed thereon and a cap layer coupled to the substrate. The cap layer has a cavity overlying a substrate region at which the sensor resides. A port extends between the cavity and a side wall of the MEMS die and enables admittance of fluid into the cavity. Fabrication methodology entails providing a substrate structure having sensors formed thereon, providing a cap layer structure having inwardly extending cavities, and forming a channel between pairs of the cavities. The cap layer structure is coupled with the substrate structure and each channel is interposed between a pair of cavities. A singulation process produces a pair of sensor packages, each having a port formed by splitting the channel, where the port is exposed during singulation and extends between its respective cavity and side wall of the sensor package.

公开(公告)号：US09346671B2

公开(公告)日：2016-05-24

申请号：US14172479

申请日：2014-02-04

申请人： FREESCALE SEMICONDUCTOR, INC.

发明人： Alan J. Magnus ,  Chad S. Dawson ,  Stephen R. Hooper

IPC分类号： B81B7/00 ,  B81C1/00 ,  H01L21/683

CPC分类号： B81C1/00896 ,  B81B7/0058 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81C1/00865 ,  H01L21/6836

摘要： A MEMS wafer (46) includes a front side (52) having a plurality of MEMS structure sites (60) at which MEMS structures (50) are located. A method (40) for protecting the MEMS structures (50) includes applying (44) a non-active feature (66) on the front side of the MEMS wafer in a region that is devoid of the MEMS structures and mounting (76) the front side of the MEMS wafer in a dicing frame (86) such that a back side (74) of the MEMS wafer is exposed. The MEMS wafer is then diced (102) from the back side into a plurality of MEMS dies (48).

摘要翻译： MEMS晶片（46）包括具有MEMS结构（60）的多个MEMS结构位置（60）的前侧（52），MEMS结构位置位于该结构位置。 用于保护MEMS结构（50）的方法（40）包括在没有MEMS结构的区域中将（44）非MEMS活动特征（66）应用于MEMS晶片的前侧，并且安装（76） 在切割框架（86）中的MEMS晶片的前侧，使得MEMS晶片的背面（74）露出。 然后将MEMS晶片从背面切割（102）到多个MEMS管芯（48）中。

公开(公告)号：US20150217998A1

公开(公告)日：2015-08-06

申请号：US14172479

申请日：2014-02-04

申请人： FREESCALE SEMICONDUCTOR, INC.

发明人： Alan J. Magnus ,  Chad S. Dawson ,  Stephen R. Hooper

IPC分类号： B81C1/00 ,  B81B7/00

CPC分类号： B81C1/00896 ,  B81B7/0058 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81C1/00865 ,  H01L21/6836

摘要： A MEMS wafer (46) includes a front side (52) having a plurality of MEMS structure sites (60) at which MEMS structures (50) are located. A method (40) for protecting the MEMS structures (50) includes applying (44) a non-active feature (66) on the front side of the MEMS wafer in a region that is devoid of the MEMS structures and mounting (76) the front side of the MEMS wafer in a dicing frame (86) such that a back side (74) of the MEMS wafer is exposed. The MEMS wafer is then diced (102) from the back side into a plurality of MEMS dies (48).

摘要翻译： MEMS晶片（46）包括具有MEMS结构（60）的多个MEMS结构位置（60）的前侧（52），MEMS结构位置位于该结构位置。 用于保护MEMS结构（50）的方法（40）包括在没有MEMS结构的区域中将（44）非MEMS活动特征（66）应用于MEMS晶片的前侧，并且安装（76） 在切割框架（86）中的MEMS晶片的前侧，使得MEMS晶片的背面（74）露出。 然后将MEMS晶片从背面切割（102）到多个MEMS管芯（48）中。

公开(公告)号：US06624921B1

公开(公告)日：2003-09-23

申请号：US09804805

申请日：2001-03-12

申请人： Thomas P. Glenn ,  Steven Webster ,  Roy Dale Hollaway

发明人： Thomas P. Glenn ,  Steven Webster ,  Roy Dale Hollaway

IPC分类号： G02B2600

CPC分类号： B81B7/0067 ,  B81B2201/042 ,  B81C1/00865 ,  B81C1/00904 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014 ,  H01L2924/16235 ,  H01L2224/05599

摘要： A window is mounted directly to an upper surface of a micromirror device chip. More particularly, the window is mounted above a micromirror device area on the upper surface of the micromirror device chip by a bead. The window in combination with the bead form a hermetic enclosure about the micromirror device area thus protecting the micromirror device area from moisture and contamination.

摘要翻译： 窗口直接安装在微镜器件芯片的上表面。 更具体地，窗口通过珠缘安装在微反射镜装置芯片的上表面上的微镜装置区域上方。 窗口与珠组合形成围绕微镜装置区域的密封外壳，从而保护微镜装置区域免受潮湿和污染。