公开(公告)号：US20150287613A1

公开(公告)日：2015-10-08

申请号：US14679254

申请日：2015-04-06

申请人： Marko J. Tadjer ,  Boris N. Feigelson ,  Nadeemullah A. Mahadik ,  Robert E. Stahlbush ,  Eugene A. Imhoff ,  Jordan Greenlee

发明人： Marko J. Tadjer ,  Boris N. Feigelson ,  Nadeemullah A. Mahadik ,  Robert E. Stahlbush ,  Eugene A. Imhoff ,  Jordan Greenlee

IPC分类号： H01L21/324 ,  H01L29/16

CPC分类号： H01L21/3247 ,  H01L21/02529 ,  H01L21/02609 ,  H01L21/02667 ,  H01L21/324 ,  H01L29/1608

摘要： A method for removing existing basal plane dislocations (BPDs) from silicon carbide epilayers by using a pulsed rapid thermal annealing process where the BPDs in the epilayers were eliminated while preserving the epitaxial surface. This high temperature, high pressure method uses silicon carbide epitaxial layers with a carbon cap to protect the surface. These capped epilayers are subjected to a plurality of rapid heating and cooling cycles.

摘要翻译： 通过使用脉冲快速热退火工艺从碳化硅外延层中去除现有基面位错（BPD）的方法，其中消除外延层中的BPD同时保留外延表面。 这种高温高压法使用具有碳帽的碳化硅外延层来保护表面。 这些加盖的外延层经受多个快速加热和冷却循环。

公开(公告)号：US09129799B2

公开(公告)日：2015-09-08

申请号：US14498065

申请日：2014-09-26

申请人： Nadeemullah A. Mahadik ,  Robert E. Stahlbush ,  Marko J. Tadjer ,  Eugene A. Imhoff ,  Boris N. Feigelson

发明人： Nadeemullah A. Mahadik ,  Robert E. Stahlbush ,  Marko J. Tadjer ,  Eugene A. Imhoff ,  Boris N. Feigelson

IPC分类号： H01L21/02 ,  H01L21/04 ,  H01L29/16

CPC分类号： H01L21/02378 ,  C30B29/36 ,  C30B33/02 ,  H01L29/1608

摘要： A method to remove basal plane dislocations in post growth silicon carbide epitaxial layers by capping post growth silicon carbide epilayers with a graphite cap and annealing the capped silicon carbon epilayers at a temperature of 1750° C. or greater with a nitrogen overpressure of 60-110 psi, wherein basal plane dislocations in the epilayers are removed while surface morphology is preserved. Also disclosed is the related silicon carbide substrate material made by this method.

摘要翻译： 通过用石墨盖封盖生长后的碳化硅外延层并在1750℃或更高的温度下，在60-110℃的氮气超压下对封盖的硅碳外延层进行退火，从而消除后生长碳化硅外延层中的基面位错的方法 psi，其中去除外延层中的基面位错，同时保留表面形态。 还公开了通过该方法制造的相关碳化硅衬底材料。

公开(公告)号：US10403509B2

公开(公告)日：2019-09-03

申请号：US14679254

申请日：2015-04-06

申请人： Marko J. Tadjer ,  Boris N. Feigelson ,  Nadeemullah A. Mahadik ,  Robert E. Stahlbush ,  Eugene A. Imhoff ,  Jordan Greenlee

发明人： Marko J. Tadjer ,  Boris N. Feigelson ,  Nadeemullah A. Mahadik ,  Robert E. Stahlbush ,  Eugene A. Imhoff ,  Jordan Greenlee

IPC分类号： H01L29/15 ,  H01L21/324 ,  H01L29/16 ,  H01L21/02

摘要： A method for removing existing basal plane dislocations (BPDs) from silicon carbide epilayers by using a pulsed rapid thermal annealing process where the BPDs in the epilayers were eliminated while preserving the epitaxial surface. This high temperature, high pressure method uses silicon carbide epitaxial layers with a carbon cap to protect the surface. These capped epilayers are subjected to a plurality of rapid heating and cooling cycles.

公开(公告)号：US20150155166A1

公开(公告)日：2015-06-04

申请号：US14498065

申请日：2014-09-26

申请人： Nadeemullah A. Mahadik ,  Robert E. Stahlbush ,  Marko J. Tadjer ,  Eugene A. Imhoff ,  Boris N. Feigelson

发明人： Nadeemullah A. Mahadik ,  Robert E. Stahlbush ,  Marko J. Tadjer ,  Eugene A. Imhoff ,  Boris N. Feigelson

IPC分类号： H01L21/02 ,  H01L29/16

CPC分类号： H01L21/02378 ,  C30B29/36 ,  C30B33/02 ,  H01L29/1608

摘要： A method to remove basal plane dislocations in post growth silicon carbide epitaxial layers by capping post growth silicon carbide epilayers with a graphite cap and annealing the capped silicon carbon epilayers at a temperature of 1750° C. or greater with a nitrogen overpressure of 60-110 psi, wherein basal plane dislocations in the epilayers are removed while surface morphology is preserved. Also disclosed is the related silicon carbide substrate material made by this method.

摘要翻译： 通过用石墨盖封盖生长后的碳化硅外延层并在1750℃或更高的温度下，在60-110℃的氮气超压下对封盖的硅碳外延层进行退火，从而消除后生长碳化硅外延层中的基面位错的方法 psi，其中去除外延层中的基面位错，同时保留表面形态。 还公开了通过该方法制造的相关碳化硅衬底材料。