摘要:
A method and an apparatus for developing images, wherein a moving latent image holding member is opposed to a developer carrying member with a space gap between them at a developing section in an amount greater than the thickness of a developer layer coated on the surface of the developer carrying member, and an alternating electric field is applied across the latent image holding member and the developer carrying member to cause the developer to reciprocatingly move between the developer carrying member and an image portion as well as a non-image portion on the latent image holding member at least at the closest region to the latent image holding member and the developer carrying member, thereby causing the surface of the developer layer carried on the developer carrying member to move in substantially the same direction and at substantially the same speed as the latent image surface at the developing section.
摘要:
A developer is composed of colored insulating particles for developing an electrostatic image wherein at least the external surface of each particle comprises two different areas of which one area constitutes a major portion of said external surface and comprises an element which defines the polarity of the triboelectric charge of said particle to a determined polarity while the other area comprises an element capable of being easily separated from said particle, transferred to a surface of a developing device and charged to a polarity opposite to that of said particle.
摘要:
A developing method which comprises causing a layer of field-dependent developer which is supported on a supporting member and whose volume resistivity is 10.sup.12 .OMEGA..multidot.cm under an electric field of 30000 V/cm to be proximate to the surface of an image bearing member bearing a latent image thereon, and applying an AC voltage to between the substrate of the latent image bearing member and the developer supporting member to thereby effect development, and an apparatus therefor.
摘要翻译:一种显影方法,其包括在30000V / cm 3的电场下使支撑在支撑构件上并且其体积电阻率为1012欧米亚×厘米的场依赖性显影剂层靠近图像承载构件的表面 在其上形成潜像,并且将AC电压施加到潜像承载部件的基板和显影剂支撑部件之间,从而进行显影,及其装置。
摘要:
The present invention provides a developing method for rendering a latent image supported on an image bearing member visible, and an apparatus therefor, in which a developer supporting member supporting thereon spherical granular developer prepared in substantially spherical form by a flow coater process or a spray drying process is maintained in opposed relation to an electrostatic image bearing member having a backing electrode so that the surface of the image bearing member and the developer on the developer supporting member are maintained in a mutually contact-free state, and an alternating voltage is applied to the developer supporting member to cause reciprocating motion of the developer in the developing area between the developer supporting member and the image bearing member.
摘要:
A developing method and apparatus in which a developer supporting member is opposed to a latent image bearing member with a clearance therebetween and developer is caused to be transferred from the developer supporting member to the latent image bearing member to effect development and wherein a first and a second developing portion are provided as the developer supporting member, these effect development in the named order to complete the developing step, a first alternating bias for causing the developer to be transferred so as to mainly develop the image end portion of the latent image is imparted to the first developing portion, and a second alternating bias for causing the developer to be transferred so as to mainly effect the development for reproducing the tone of the latent image is imparted to the second developing portion.
摘要:
A method and apparatus for conveying developing agent for use in an image forming apparatus, in which a magnetic developer is placed under the influence of a forcing magnetic field, then the developer restrained by the forcing magnetic field is caused to pass through a slit-passageway having a narrowing clearance, thereafter the developer is pushed out into a conveying path by reducing the intensity of the forcing magnetic field to the developer which has passed through the minimum clearance in the slit-passageway below the magnetic field in the minimum clearance section of the slit-passageway, and finally the developer which has been pushed out into the conveying path is moved in and through the conveying path by being further pushed by subsequently transported developer. The apparatus is basically constructed with a magnetic developer conveying device having a magnetic power source to impart moving force to the magnetic developer, and a guide member disposed adjacent to the magnetic developer conveying device to guide the magnetic developer in substantially an upward direction.
摘要:
One of several corona dischargers used in an electrophotographic apparatus is connected to a power source transformer so as to selectively operate these corona dischargers. The power source transformer is provided with a tertiary winding, to which a switching device is connected. When the switching device is turned on, a secondary output from the transformer becomes lower than a corona discharging limit voltage, whereby the corona discharging stops.
摘要:
A semiconductor memory device comprises a silicon layer having a first diffused region and a second diffused region formed therein, a gate electrode formed through an insulating film on one side of the silicon layer between the first and the second diffused regions, a capacitor formed on said one side of the silicon layer and having a storage electrode connected to the first diffused region, and a bit line formed on the other side of the silicon layer and connected to the second diffused region, whereby a semiconductor memory device of SOI structure can be easily fabricated. The bit line connected to the second diffused region is formed on the other side of the semiconductor layer, whereby the bit line can be arranged without restriction by the structure, etc. of the capacitor. Short circuit between the capacitor and the bit line can be prevented.
摘要:
Substitution reaction between polysilicon and Al (aluminum) is utilized. Namely, polysilicon films are formed by patterning at first as in the related art, and after an Al film is formed on an interlayer insulating film to be in contact with the polysilicon films, the polysilicon films in the interlayer insulating film 9 are replaced with Al by heat treatment. By patterning, gate electrodes constituted of Al low in gate parasite resistance and high in mobility is formed.
摘要:
A capacitor 19 comprises a lower electrode 14 formed on a substrate 10, an upper electrode 18 opposed to the lower electrode, and a capacitor dielectric film 16 formed between the lower electrode and the upper electrode, in which at least one of the lower electrode and the upper electrodes is an electrode of a metal substituted layer. The lower electrodes of polysilicon are formed, and then after the high-temperature heat processing for improving film quality of the capacitor dielectric film has been performed, the lower electrodes of polysilicon is substituted with aluminum to form the lower electrodes of aluminum, whereby aluminum, which cannot withstand the heat processing for improving film quality of the capacitor dielectric film can be used as a material of the lower electrodes. Thus, capacitors having good high-speed response can be formed.