公开(公告)号：US06909300B2

公开(公告)日：2005-06-21

申请号：US10143412

申请日：2002-05-09

Applicant: Nai-Cheng Lu ,  Yu-Ting Liao ,  Fu-Sung Liu

Inventor： Nai-Cheng Lu ,  Yu-Ting Liao ,  Fu-Sung Liu

IPC: G01R1/067 ,  G01R3/00 ,  G01R31/26

CPC classification number: G01R1/06738 ,  G01R3/00

Abstract: A method for fabricating an electrical test apparatus electrical probe tip first provides a probe tip substrate having a topographic surface. A high density plasma chemical vapor deposition (HDP-CVD) deposited mandrel layer is then formed upon the topographic surface. It has a series of pointed tips formed over a series of topographic features within the topographic surface. Finally, a conductor probe tip layer is formed conformally upon the high density plasma chemical vapor deposition (HDP-CVD) deposited mandrel layer and replicating the series of pointed tips. Due to the series of pointed tips and the series of replicated pointed tips, a microelectronic fabrication when tested with the electrical test apparatus electrical probe tip is tested with enhanced accuracy.

Abstract translation: 电气测试装置电探针尖端的制造方法首先提供具有地形表面的探针尖端基底。 然后在地形表面上形成高密度等离子体化学气相沉积（HDP-CVD）沉积心轴层。 它在地形表面上形成了一系列尖端形成的一系列地形特征。 最后，导体探针尖端层在高密度等离子体化学气相沉积（HDP-CVD）沉积的心轴层上共形地形成并复制了一系列尖端。 由于一系列尖端尖端和一系列复制尖端技术，使用电气测试仪器电探针尖端进行测试的微电子制造能够以更高的精度进行测试。

公开(公告)号：US06212104B1

公开(公告)日：2001-04-03

申请号：US09495346

申请日：2000-02-01

Applicant: Nai-Cheng Lu

Inventor： Nai-Cheng Lu

IPC: G11C1604

CPC classification number: H01L29/7881 ,  G11C16/0416 ,  H01J9/025 ,  H01J19/24 ,  H01J21/105

Abstract: In this invention a micro vacuum tube is used to form a flash memory cell. The micro vacuum tube is position over a floating gate and is used to program, erase, read and deselect the flash memory cell. A first embodiment includes a source and drain with the floating gate to provide a means to produce bit line current to be read by the flash memory sense amplifiers. In a second embodiment the source and drain are eliminated and cathode gate current is used to indicate the state of the flash memory cell. In a third embodiment the floating gate is replace with a diffusion in the semiconductor substrate. The cathode tip is formed by filling a depression in a sacrificial material used to temporarily fill the volume that will be the vacuum chamber when the vacuum tube is completed. The tip can be a convex cusp producing a needle like point or an elongated convex cusp having an sharp line edge. The two different shaped cathode tips depend on the shape of the vacuum chamber, and the elongated convex cusp produces a more efficient emission of electron.

Abstract translation: 在本发明中，使用微型真空管来形成闪存单元。 微型真空管位于浮动栅极上，用于对闪存单元进行编程，擦除，读取和取消选择。 第一实施例包括具有浮动栅极的源极和漏极，以提供产生要由闪存读出放大器读取的位线电流的装置。 在第二实施例中，消除了源极和漏极，并且使用阴极栅极电流来指示闪存单元的状态。 在第三实施例中，浮置栅极被替换为半导体衬底中的扩散。 当真空管完成时，通过在牺牲材料中填充用于临时填充真空室的体积的牺牲材料来形成阴极尖端。 尖端可以是产生针状点的凸起尖点或具有尖锐线边缘的细长凸起尖点。 两个不同形状的阴极尖端取决于真空室的形状，并且细长凸起尖端产生更有效的电子发射。

公开(公告)号：US06344674B2

公开(公告)日：2002-02-05

申请号：US09784820

申请日：2001-02-20

Applicant: Nai-Cheng Lu

Inventor： Nai-Cheng Lu

IPC: G11C1604

CPC classification number: H01L29/7881 ,  G11C16/02 ,  G11C16/0416 ,  H01J19/24 ,  H01J21/105

Abstract: In this invention a micro vacuum tube is used to form a flash memory cell. The micro vacuum tube is position over a floating gate and is used to program, erase, read and deselect the flash memory cell. A first embodiment includes a source and drain with the floating gate to provide a means to produce bit line current to be read by the flash memory sense amplifiers. In a second embodiment the source and drain are eliminated and cathode gate current is used to indicate the state of the flash memory cell. In a third embodiment the floating gate is replace with a diffusion in the semiconductor substrate. The cathode tip is formed by filling a depression in a sacrificial material used to temporarily fill the volume that will be the vacuum chamber when the vacuum tube is completed. The tip can be a convex cusp producing a needle like point or an elongated convex cusp having an sharp line edge. The two different shaped cathode tips depend on the shape of the vacuum chamber, and the elongated convex cusp produces a more efficient emission of electron.

Abstract translation: 在本发明中，使用微型真空管来形成闪存单元。 微型真空管位于浮动栅极上，用于对闪存单元进行编程，擦除，读取和取消选择。 第一实施例包括具有浮动栅极的源极和漏极，以提供产生要由闪存读出放大器读取的位线电流的装置。 在第二实施例中，消除了源极和漏极，并且使用阴极栅极电流来指示闪存单元的状态。 在第三实施例中，浮置栅极被替换为半导体衬底中的扩散。 当真空管完成时，通过在牺牲材料中填充用于临时填充真空室的体积的牺牲材料来形成阴极尖端。 尖端可以是产生针状点的凸起尖点或具有尖锐线边缘的细长凸起尖点。 两个不同形状的阴极尖端取决于真空室的形状，并且细长凸起尖端产生更有效的电子发射。

公开(公告)号：US06194829B1

公开(公告)日：2001-02-27

申请号：US09575247

申请日：2000-05-22

Applicant: Nai-Cheng Lu

Inventor： Nai-Cheng Lu

IPC: H01J1304

CPC classification number: H01L29/7881 ,  G11C16/0416 ,  H01J9/025 ,  H01J19/24 ,  H01J21/105

Abstract: A micro vacuum tube includes a disk (7) having an axis and formed of successive planar layers of a first conductive layer (2), a first dielectric layer (3), a second conductive layer (4), and a second dielectric layer(5), a hole along the axis of the cylinder extends through the first dielectric layer (3), the second conductive layer (4), and the second dielectric layer (5), a cusp shaped microtip (62) centrally located over, and extending into, the hole is separated from and supported by, a pole (75) that rests on the second dielectric layer, and a cap (82) seals the microtip, the pole (75) and the hole in a permanent vacuum environment.

Abstract translation: 微型真空管包括具有轴线并由第一导电层（2），第一介电层（3），第二导电层（4）和第二电介质层（3）的连续平面层形成的盘（7） 沿着圆柱体的轴线延伸穿过第一介电层（3），第二导电层（4）和第二介电层（5），位于中心的尖尖形微尖头（62），以及 所述孔与所述第二电介质层上的极（75）分离并由其支撑，并且帽（82）在永久真空环境中密封所述微尖端，所述极（75）和所述孔。

公开(公告)号：US6083069A

公开(公告)日：2000-07-04

申请号：US108414

申请日：1998-07-01

Applicant: Nai-Cheng Lu

Inventor： Nai-Cheng Lu

IPC: G11C16/04 ,  H01J9/02 ,  H01J19/24 ,  H01J21/10 ,  H01L29/788

CPC classification number: H01L29/7881 ,  G11C16/0416 ,  H01J19/24 ,  H01J21/105 ,  H01J9/025

Abstract: A micro vacuum tube is described. The process for manufacturing it begins with the deposition of two layers of polysilicon or metal, separated by dielectric layers, topping them with a layer of silicon nitride, and forming these into the shape of a disk. A hole is etched in the silicon nitride and then lined with a spacer, causing the width of the hole to decrease from top to bottom. When the hole is partially filled with a sacrificial layer the latter has a depression at its center which may be used as a mold for a microtip. To allow for easy removal of the sacrificial layer, pole holes are etched in it. These become support poles after the microtip material has been deposited over the sacrificial layer (which gets removed in its entirety). As an alternative to a microtip, a micro razor edge may be used for the cold emitter. A cap deposited over the structure while it is in vacuo serves to keep it under permanent vacuum.

Abstract translation: 描述微型真空管。 其制造方法开始于沉积两层多晶硅或金属，由电介质层分开，用氮化硅层顶起来，并将其形成为盘形。 在氮化硅中蚀刻孔，然后用间隔物衬里，导致孔的宽度从顶部到底部减小。 当孔部分地填充有牺牲层时，其在其中心处具有凹陷，其可以用作微尖端的模具。 为了容易地去除牺牲层，在其中蚀刻极孔。 在微焊料材料已经沉积在牺牲层上（其被整体去除）之后，它们变成支撑极。 作为微尖端的替代，微型剃刀边缘可用于冷发射器。 在真空下沉积在结构上的盖子用于将其保持在永久真空下。