Organic light emitting display device
    1.
    发明申请
    Organic light emitting display device 有权
    有机发光显示装置

    公开(公告)号:US20100102301A1

    公开(公告)日:2010-04-29

    申请号:US12588802

    申请日:2009-10-28

    IPC分类号: H01L33/00 H01L51/10

    摘要: An organic light emitting display device. The organic light emitting display device includes a substrate having a pixel region in which pixels are formed and a non-pixel region in which a light sensor is formed, an insulating film formed on the substrate, a first electrode formed on the insulating film and formed of a reflective material reflecting light, the first electrode being formed on the entire surface of the insulating film except for a region between the pixels and a region over the light sensor, a pixel defining film exposing a region of the first electrode and formed on the insulating film, an organic light emitting layer formed on the exposed region of the first electrode, and a second electrode formed on the organic light emitting layer. The first electrode is formed to have a greater area than that of the organic light emitting layer.

    摘要翻译: 一种有机发光显示装置。 有机发光显示装置包括具有形成有像素的像素区域的基板和形成有光传感器的非像素区域,形成在基板上的绝缘膜,形成在绝缘膜上并形成的第一电极 反射光的反射材料,所述第一电极形成在所述绝缘膜的除了所述像素之间的区域和所述光传感器之上的区域之外的整个表面上,所述像素限定膜暴露所述第一电极的区域并形成在所述第一电极上 绝缘膜,形成在第一电极的暴露区域上的有机发光层和形成在有机发光层上的第二电极。 第一电极形成为具有比有机发光层的面积大的面积。

    Organic light emitting display device
    2.
    发明授权
    Organic light emitting display device 有权
    有机发光显示装置

    公开(公告)号:US08288780B2

    公开(公告)日:2012-10-16

    申请号:US12588802

    申请日:2009-10-28

    摘要: An organic light emitting display device. The organic light emitting display device includes a substrate having a pixel region in which pixels are formed and a non-pixel region in which a light sensor is formed, an insulating film formed on the substrate, a first electrode formed on the insulating film and formed of a reflective material reflecting light, the first electrode being formed on the entire surface of the insulating film except for a region between the pixels and a region over the light sensor, a pixel defining film exposing a region of the first electrode and formed on the insulating film, an organic light emitting layer formed on the exposed region of the first electrode, and a second electrode formed on the organic light emitting layer. The first electrode is formed to have a greater area than that of the organic light emitting layer.

    摘要翻译: 一种有机发光显示装置。 有机发光显示装置包括具有形成有像素的像素区域的基板和形成有光传感器的非像素区域,形成在基板上的绝缘膜,形成在绝缘膜上并形成的第一电极 反射光的反射材料,所述第一电极形成在所述绝缘膜的除了所述像素之间的区域和所述光传感器之上的区域之外的整个表面上,所述像素限定膜暴露所述第一电极的区域并形成在所述第一电极上 绝缘膜,形成在第一电极的暴露区域上的有机发光层和形成在有机发光层上的第二电极。 第一电极形成为具有比有机发光层的面积大的面积。

    Light emitting display device and method of fabricating the same
    3.
    发明授权
    Light emitting display device and method of fabricating the same 有权
    发光显示装置及其制造方法

    公开(公告)号:US07915649B2

    公开(公告)日:2011-03-29

    申请号:US12219262

    申请日:2008-07-18

    IPC分类号: H01L27/148

    CPC分类号: H01L27/3269 H01L27/1214

    摘要: A light emitting display device includes a light emitting diode and a thin film transistor on a substrate, the light emitting diode and thin film transistor being electrically coupled to each other, and a photo diode on the substrate, the photo diode including an N-type doping region, a P-type doping region, and an intrinsic region between the N-type doping region and the P-type doping region, the intrinsic region including amorphous silicon.

    摘要翻译: 发光显示装置包括基板上的发光二极管和薄膜晶体管,所述发光二极管和薄膜晶体管彼此电耦合,并且所述基板上的光电二极管,所述光电二极管包括N型 掺杂区域,P型掺杂区域和N型掺杂区域和P型掺杂区域之间的本征区域,本征区域包括非晶硅。

    Light emitting display device and method of fabricating the same
    4.
    发明申请
    Light emitting display device and method of fabricating the same 有权
    发光显示装置及其制造方法

    公开(公告)号:US20090072248A1

    公开(公告)日:2009-03-19

    申请号:US12219262

    申请日:2008-07-18

    IPC分类号: H01L33/00

    CPC分类号: H01L27/3269 H01L27/1214

    摘要: A light emitting display device includes a light emitting diode and a thin film transistor on a substrate, the light emitting diode and thin film transistor being electrically coupled to each other, and a photo diode on the substrate, the photo diode including an N-type doping region, a P-type doping region, and an intrinsic region between the N-type doping region and the P-type doping region, the intrinsic region including amorphous silicon.

    摘要翻译: 发光显示装置包括基板上的发光二极管和薄膜晶体管,所述发光二极管和薄膜晶体管彼此电耦合,并且所述基板上的光电二极管,所述光电二极管包括N型 掺杂区域,P型掺杂区域和N型掺杂区域和P型掺杂区域之间的本征区域,本征区域包括非晶硅。

    Double gate thin-film transistor and OLED display apparatus including the same
    8.
    发明授权
    Double gate thin-film transistor and OLED display apparatus including the same 有权
    双栅极薄膜晶体管和包括其的OLED显示装置

    公开(公告)号:US08395157B2

    公开(公告)日:2013-03-12

    申请号:US13155329

    申请日:2011-06-07

    IPC分类号: H01L29/04 H01L29/10 H01L21/00

    摘要: A double gate thin-film transistor (TFT), and an organic light-emitting diode (OLED) display apparatus including the double gate TFT, includes a double gate thin-film transistor (TFT) including: a first gate electrode on a substrate; an active layer on the first gate electrode; source and drain electrodes on the active layer; a planarization layer on the substrate and the source and drain electrodes, and having an opening corresponding to the active layer; and a second gate electrode in the opening.

    摘要翻译: 包括双栅极TFT的双栅极薄膜晶体管(TFT)和有机发光二极管(OLED)显示装置包括双栅极薄膜晶体管(TFT),其包括:基板上的第一栅电极; 在第一栅电极上的有源层; 有源层上的源极和漏极; 所述基板上的平坦化层和所述源极和漏极,并且具有对应于所述有源层的开口; 和第二栅电极。

    Thin film transistor, method of manufacturing the thin film transistor and organic light emitting display device have the thin film transistor
    10.
    发明授权
    Thin film transistor, method of manufacturing the thin film transistor and organic light emitting display device have the thin film transistor 有权
    薄膜晶体管,制造薄膜晶体管的方法和有机发光显示装置具有薄膜晶体管

    公开(公告)号:US08963214B2

    公开(公告)日:2015-02-24

    申请号:US12892820

    申请日:2010-09-28

    摘要: A thin film transistor for an organic light emitting display device is disclosed. In one embodiment, the thin film transistor includes: a substrate, an active layer formed over the substrate, wherein the active layer is formed of an oxide semiconductor, a gate insulating layer formed over the substrate and the active layer, and source and drain electrodes formed on the gate insulating layer and electrically connected to the active layer. The transistor may further include a gate electrode formed on the gate insulating layer and formed between the source and drain electrodes, wherein the gate electrode is spaced apart from the source electrode so as to define a first offset region therebetween, and wherein the gate electrode is spaced apart from the drain electrode so as to define a second offset region therebetween. The transistor may further include a passivation layer formed on i) the gate insulating layer, ii) the source and drain electrodes and iii) the gate electrode; and at least one auxiliary gate electrode formed on the passivation layer, wherein at least a portion of the auxiliary gate electrode is located directly above the first and second offset regions.

    摘要翻译: 公开了一种用于有机发光显示装置的薄膜晶体管。 在一个实施例中,薄膜晶体管包括:衬底,在衬底上形成的有源层,其中有源层由氧化物半导体形成,栅极绝缘层形成在衬底和有源层上,以及源极和漏极 形成在栅绝缘层上并电连接到有源层。 晶体管还可以包括形成在栅极绝缘层上并形成在源电极和漏电极之间的栅电极,其中栅电极与源电极间隔开,以便在它们之间限定第一偏移区域,并且其中栅电极 与漏极间隔开,以便在它们之间限定第二偏移区域。 晶体管还可以包括在i)栅极绝缘层上形成的钝化层,ii)源极和漏极,以及iii)栅电极; 以及形成在所述钝化层上的至少一个辅助栅极电极,其中所述辅助栅电极的至少一部分位于所述第一和第二偏移区域的正上方。