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公开(公告)号:US07510970B2
公开(公告)日:2009-03-31
申请号:US11357181
申请日:2006-02-21
申请人: Naofumi Ohashi , Junji Noguchi , Toshinori Imai , Hizuru Yamaguchi , Nobuo Owada , Kenji Hinode , Yoshio Homma , Seiichi Kondo
发明人: Naofumi Ohashi , Junji Noguchi , Toshinori Imai , Hizuru Yamaguchi , Nobuo Owada , Kenji Hinode , Yoshio Homma , Seiichi Kondo
IPC分类号: H01L21/44
CPC分类号: H01L21/0209 , G09G5/399 , H01L21/02074 , H01L21/3212 , H01L21/76838 , H01L21/7684 , Y10S438/906
摘要: In order to provide an anticorrosive technique for metal wirings formed by a chemical mechanical polishing (CMP) method, a process for manufacturing a semiconductor integrated circuit device according to the invention comprises the steps of: forming a metal layer of Cu (or a Cu alloy containing Cu as a main component) over the major face of a wafer and then planarizing the metal layer by a chemical mechanical polishing (CMP) method to form metal wirings; anticorroding the planarized major face of the wafer to form a hydrophobic protective film over the surfaces of the metal wirings; immersing the anticorroded major face of the wafer or keeping the same in a wet state so that it may not become dry; and post-cleaning the major face, kept in the wet state, of the wafer.
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公开(公告)号:US06376345B1
公开(公告)日:2002-04-23
申请号:US09356707
申请日:1999-07-20
申请人: Naofumi Ohashi , Junji Noguchi , Toshinori Imai , Hizuru Yamaguchi , Nobuo Owada , Kenji Hinode , Yoshio Homma , Seiichi Kondo
发明人: Naofumi Ohashi , Junji Noguchi , Toshinori Imai , Hizuru Yamaguchi , Nobuo Owada , Kenji Hinode , Yoshio Homma , Seiichi Kondo
IPC分类号: H01L2138
CPC分类号: H01L21/0209 , G09G5/399 , H01L21/02074 , H01L21/3212 , H01L21/76838 , H01L21/7684 , Y10S438/906
摘要: In order to provide an anticorrosive technique for metal wirings formed by a chemical mechanical polishing (CMP) method, a process for manufacturing a semiconductor integrated circuit device according to the invention comprises the steps of: forming a metal layer of Cu (or a Cu alloy containing Cu as a main component) over the major face of a wafer and then planarizing the metal layer by a chemical mechanical polishing (CMP) method to form metal wirings; anticorroding the planarized major face of the wafer to form a hydrophobic protective film over the surfaces of the metal wirings; immersing the anticorroded major face of the wafer or keeping the same in a wet state so that it may not become dry; and post-cleaning the major face, kept in the wet state, of the wafer.
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公开(公告)号:US08129275B2
公开(公告)日:2012-03-06
申请号:US12700784
申请日:2010-02-05
申请人: Naofumi Ohashi , Junji Noguchi , Toshinori Imai , Hizuru Yamaguchi , Nobuo Owada , Kenji Hinode , Yoshio Homma , Seiichi Kondo
发明人: Naofumi Ohashi , Junji Noguchi , Toshinori Imai , Hizuru Yamaguchi , Nobuo Owada , Kenji Hinode , Yoshio Homma , Seiichi Kondo
IPC分类号: H01L21/44
CPC分类号: H01L21/0209 , G09G5/399 , H01L21/02074 , H01L21/3212 , H01L21/76838 , H01L21/7684 , Y10S438/906
摘要: In order to provide an anticorrosive technique for metal wirings formed by a chemical mechanical polishing (CMP) method, a process for manufacturing a semiconductor integrated circuit device according to the invention comprises the steps of: forming a metal layer of Cu (or a Cu alloy containing Cu as a main component) over the major face of a wafer and then planarizing the metal layer by a chemical mechanical polishing (CMP) method to form metal wirings; anticorroding the planarized major face of the wafer to form a hydrophobic protective film over the surfaces of the metal wirings; immersing the anticorroded major face of the wafer or keeping the same in a wet state so that it may not become dry; and post-cleaning the major face, kept in the wet state, of the wafer.
摘要翻译: 为了提供通过化学机械抛光(CMP)方法形成的金属配线的防腐蚀技术,根据本发明的半导体集成电路器件的制造方法包括以下步骤:形成Cu(或Cu合金)的金属层 含有Cu作为主要成分),然后通过化学机械抛光(CMP)方法平坦化金属层以形成金属布线; 防止晶片的平面化主面在金属布线的表面上形成疏水性保护膜; 将晶圆的防腐主面浸入或保持湿润状态,使其不会变干; 并将晶片的主要表面保持在潮湿状态。
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公开(公告)号:US20100136786A1
公开(公告)日:2010-06-03
申请号:US12700784
申请日:2010-02-05
申请人: Naofumi Ohashi , Junji Noguchi , Toshinori Imai , Hizuru Yamaguchi , Nobuo Owada , Kenji Hinode , Yoshio Homma , Seiichi Kondo
发明人: Naofumi Ohashi , Junji Noguchi , Toshinori Imai , Hizuru Yamaguchi , Nobuo Owada , Kenji Hinode , Yoshio Homma , Seiichi Kondo
IPC分类号: H01L21/768
CPC分类号: H01L21/0209 , G09G5/399 , H01L21/02074 , H01L21/3212 , H01L21/76838 , H01L21/7684 , Y10S438/906
摘要: In order to provide an anticorrosive technique for metal wirings formed by a chemical mechanical polishing (CMP) method, a process for manufacturing a semiconductor integrated circuit device according to the invention comprises the steps of: forming a metal layer of Cu (or a Cu alloy containing Cu as a main component) over the major face of a wafer and then planarizing the metal layer by a chemical mechanical polishing (CMP) method to form metal wirings; anticorroding the planarized major face of the wafer to form a hydrophobic protective film over the surfaces of the metal wirings; immersing the anticorroded major face of the wafer or keeping the same in a wet state so that it may not become dry; and post-cleaning the major face, kept in the wet state, of the wafer.
摘要翻译: 为了提供通过化学机械抛光(CMP)方法形成的金属配线的防腐蚀技术,根据本发明的半导体集成电路器件的制造方法包括以下步骤:形成Cu(或Cu合金)的金属层 含有Cu作为主要成分),然后通过化学机械抛光(CMP)方法平坦化金属层以形成金属布线; 防止晶片的平面化主面在金属布线的表面上形成疏水性保护膜; 将晶圆的防腐主面浸入或保持湿润状态,使其不会变干; 并将晶片的主要表面保持在潮湿状态。
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公开(公告)号:US06531400B2
公开(公告)日:2003-03-11
申请号:US10222848
申请日:2002-08-19
申请人: Naofumi Ohashi , Junji Noguchi , Toshinori Imai , Hizuru Yamaguchi , Nobuo Owada , Kenji Hinode , Yoshio Homma , Seiichi Kondo
发明人: Naofumi Ohashi , Junji Noguchi , Toshinori Imai , Hizuru Yamaguchi , Nobuo Owada , Kenji Hinode , Yoshio Homma , Seiichi Kondo
IPC分类号: H01L214263
CPC分类号: H01L21/0209 , G09G5/399 , H01L21/02074 , H01L21/3212 , H01L21/76838 , H01L21/7684 , Y10S438/906
摘要: In order to provide an anticorrosive technique for metal wirings formed by a chemical mechanical polishing (CMP) method, a process for manufacturing a semiconductor integrated circuit device according to the invention comprises the steps of: forming a metal layer of Cu (or a Cu alloy containing Cu as a main component) over the major face of a wafer and then planarizing the metal layer by a chemical mechanical polishing (CMP) method to form metal wirings; anticorroding the planarized major face of the wafer to form a hydrophobic protective film over the surfaces of the metal wirings; immersing the anticorroded major face of the wafer or keeping the same in a wet state so that it may not become dry; and post-cleaning the major face, kept in the wet state, of the wafer.
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公开(公告)号:US20080233736A1
公开(公告)日:2008-09-25
申请号:US12127564
申请日:2008-05-27
申请人: Naofumi Ohashi , Junji Noguchi , Toshinori Imai , Hizuru Yamaguchi , Nobuo Owada , Kenji Hinode , Yoshio Homma , Seiichi Kondo
发明人: Naofumi Ohashi , Junji Noguchi , Toshinori Imai , Hizuru Yamaguchi , Nobuo Owada , Kenji Hinode , Yoshio Homma , Seiichi Kondo
IPC分类号: H01L21/4763
CPC分类号: H01L21/0209 , G09G5/399 , H01L21/02074 , H01L21/3212 , H01L21/76838 , H01L21/7684 , Y10S438/906
摘要: In order to provide an anticorrosive technique for metal wirings formed by a chemical mechanical polishing (CMP) method, a process for manufacturing a semiconductor integrated circuit device according to the invention comprises the steps of: forming a metal layer of Cu (or a Cu alloy containing Cu as a main component) over the major face of a wafer and then planarizing the metal layer by a chemical mechanical polishing (CMP) method to form metal wirings; anticorroding the planarized major face of the wafer to form a hydrophobic protective film over the surfaces of the metal wirings; immersing the anticorroded major face of the wafer or keeping the same in a wet state so that it may not become dry; and post-cleaning the major face, kept in the wet state, of the wafer.
摘要翻译: 为了提供通过化学机械抛光(CMP)方法形成的金属配线的防腐蚀技术,根据本发明的半导体集成电路器件的制造方法包括以下步骤:形成Cu(或Cu合金)的金属层 含有Cu作为主要成分),然后通过化学机械抛光(CMP)方法平坦化金属层以形成金属布线; 防止晶片的平面化主面在金属布线的表面上形成疏水性保护膜; 将晶圆的防腐主面浸入或保持湿润状态,使其不会变干; 并将晶片的主要表面保持在潮湿状态。
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公开(公告)号:US20060141792A1
公开(公告)日:2006-06-29
申请号:US11357181
申请日:2006-02-21
申请人: Naofumi Ohashi , Junji Noguchi , Toshinori Imai , Hizuru Yamaguchi , Nobuo Owada , Kenji Hinode , Yoshio Homma , Seiichi Kondo
发明人: Naofumi Ohashi , Junji Noguchi , Toshinori Imai , Hizuru Yamaguchi , Nobuo Owada , Kenji Hinode , Yoshio Homma , Seiichi Kondo
IPC分类号: H01L21/44
CPC分类号: H01L21/0209 , G09G5/399 , H01L21/02074 , H01L21/3212 , H01L21/76838 , H01L21/7684 , Y10S438/906
摘要: In order to provide an anticorrosive technique for metal wirings formed by a chemical mechanical polishing (CMP). method, a process for manufacturing. a semiconductor integrated circuit device according to the invention comprises the steps of: forming a metal layer of Cu (or a Cu alloy containing Cu as a main component) over the major face of a wafer and then planarizing the metal layer by a chemical mechanical polishing (CMP) method to form metal wirings; anticorroding the planarized major face of the wafer to form a hydrophobic protective film over the surfaces of the metal wirings; immersing the anticorroded major face of the wafer or keeping the same in a wet state so that it may not become dry; and post-cleaning the major face, kept in the wet state, of the wafer.
摘要翻译: 为了提供通过化学机械抛光(CMP)形成的金属配线的防腐蚀技术。 方法,制造方法。 根据本发明的半导体集成电路器件包括以下步骤:在晶片的主面上形成Cu(或含有Cu作为主要成分的Cu合金)的金属层,然后通过化学机械抛光使金属层平坦化 (CMP)方法形成金属布线; 防止晶片的平面化主面在金属布线的表面上形成疏水性保护膜; 将晶圆的防腐主面浸入或保持湿润状态,使其不会变干; 并将晶片的主要表面保持在潮湿状态。
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公开(公告)号:US06800557B2
公开(公告)日:2004-10-05
申请号:US10369716
申请日:2003-02-21
申请人: Naofumi Ohashi , Junji Noguchi , Toshinori Imai , Hizuru Yamaguchi , Nobuo Owada , Kenji Hinode , Yoshio Homma , Seiichi Kondo
发明人: Naofumi Ohashi , Junji Noguchi , Toshinori Imai , Hizuru Yamaguchi , Nobuo Owada , Kenji Hinode , Yoshio Homma , Seiichi Kondo
IPC分类号: H01L21302
CPC分类号: H01L21/0209 , G09G5/399 , H01L21/02074 , H01L21/3212 , H01L21/76838 , H01L21/7684 , Y10S438/906
摘要: In order to provide an anticorrosive technique for metal wirings formed by a chemical mechanical polishing (CMP) method, a process for manufacturing a semiconductor integrated circuit device according to the invention comprises the steps of: forming a metal layer of Cu (or a Cu alloy containing Cu as a main component) over the major face of a wafer and then planarizing the metal layer by a chemical mechanical polishing (CMP) method to form metal wirings; anticorroding the planarized major face of the wafer to form a hydrophobic protective film over the surfaces of the metal wirings; immersing the anticorroded major face of the wafer or keeping the same in a wet state so that it may not become dry; and post-cleaning the major face, kept in the wet state, of the wafer.
摘要翻译: 为了提供通过化学机械抛光(CMP)方法形成的金属配线的防腐蚀技术,根据本发明的半导体集成电路器件的制造方法包括以下步骤:形成Cu(或Cu合金)的金属层 含有Cu作为主要成分),然后通过化学机械抛光(CMP)方法平坦化金属层以形成金属布线; 防止晶片的平面化主面在金属布线的表面上形成疏水性保护膜; 将晶圆的防腐主面浸入或保持湿润状态,使其不会变干; 并将晶片的主要表面保持在潮湿状态。
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公开(公告)号:US07659201B2
公开(公告)日:2010-02-09
申请号:US12127564
申请日:2008-05-27
申请人: Naofumi Ohashi , Junji Noguchi , Toshinori Imai , Hizuru Yamaguchi , Nobuo Owada , Kenji Hinode , Yoshio Homma , Seiichi Kondo
发明人: Naofumi Ohashi , Junji Noguchi , Toshinori Imai , Hizuru Yamaguchi , Nobuo Owada , Kenji Hinode , Yoshio Homma , Seiichi Kondo
IPC分类号: H01L21/44
CPC分类号: H01L21/0209 , G09G5/399 , H01L21/02074 , H01L21/3212 , H01L21/76838 , H01L21/7684 , Y10S438/906
摘要: In order to provide an anticorrosive technique for metal wirings formed by a chemical mechanical polishing (CMP) method, a process for manufacturing a semiconductor integrated circuit device according to the invention comprises the steps of: forming a metal layer of Cu (or a Cu alloy containing Cu as a main component) over the major face of a wafer and then planarizing the metal layer by a chemical mechanical polishing (CMP) method to form metal wirings; anticorroding the planarized major face of the wafer to form a hydrophobic protective film over the surfaces of the metal wirings; immersing the anticorroded major face of the wafer or keeping the same in a wet state so that it may not become dry; and post-cleaning the major face, kept in the wet state, of the wafer.
摘要翻译: 为了提供通过化学机械抛光(CMP)方法形成的金属配线的防腐蚀技术,根据本发明的半导体集成电路器件的制造方法包括以下步骤:形成Cu(或Cu合金)的金属层 含有Cu作为主要成分),然后通过化学机械抛光(CMP)方法平坦化金属层以形成金属布线; 防止晶片的平面化主面在金属布线的表面上形成疏水性保护膜; 将晶圆的防腐主面浸入或保持湿润状态,使其不会变干; 并将晶片的主要表面保持在潮湿状态。
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公开(公告)号:US06458674B1
公开(公告)日:2002-10-01
申请号:US10050562
申请日:2002-01-18
申请人: Naofumi Ohashi , Junji Noguchi , Toshinori Imai , Hizuru Yamaguchi , Nobuo Owada , Kenji Hinode , Yoshio Homma , Seiichi Kondo
发明人: Naofumi Ohashi , Junji Noguchi , Toshinori Imai , Hizuru Yamaguchi , Nobuo Owada , Kenji Hinode , Yoshio Homma , Seiichi Kondo
IPC分类号: H01L21/3205 , G09G5/399 , H01L21/02 , H01L21/302 , H01L21/304 , H01L21/321 , H01L21/768 , H01L21/38
CPC分类号: H01L21/0209 , G09G5/399 , H01L21/02074 , H01L21/3212 , H01L21/76838 , H01L21/7684 , Y10S438/906
摘要: In order to provide an anticorrosive technique for metal wirings formed by a chemical mechanical polishing (CMP) method, a process for manufacturing a semiconductor integrated circuit device according to the invention comprises the steps of: forming a metal layer of Cu (or a Cu alloy containing Cu as a main component) over the major face of a wafer and then planarizing the metal layer by a chemical mechanical polishing (CMP) method to form metal wirings; anticorroding the planarized major face of the wafer to form a hydrophobic protective film over the resurfaces of the metal wirings; immersing the anticorroded major face of the wafer or keeping the same in a wet state so that it may not become dry; and post-cleaning the major face, kept in the wet state, of the wafer.
摘要翻译: 为了提供通过化学机械抛光(CMP)方法形成的金属配线的防腐蚀技术,根据本发明的半导体集成电路器件的制造方法包括以下步骤:形成Cu(或Cu合金)的金属层 含有Cu作为主要成分),然后通过化学机械抛光(CMP)方法平坦化金属层以形成金属布线; 防止晶片的平面化主面在金属布线的表面上形成疏水性保护膜; 将晶圆的防腐主面浸入或保持湿润状态,使其不会变干; 并将晶片的主要表面保持在潮湿状态。
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