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1.发明授权公开(公告)号：US08673076B2
公开(公告)日：2014-03-18
申请号：US12578012
申请日：2009-10-13
申请人： Naoharu Nakaiso
发明人： Naoharu Nakaiso
IPC分类号： C23C16/22 , C23C16/24 , C23C16/455
CPC分类号： H01L21/67109 , C23C16/455 , C23C16/45578
摘要： Disclosed is a substrate processing apparatus which comprises reaction tubes (3,4) for processing multiple substrates (27), a heater (5) for heating the substrates, and gas introducing nozzles (6,7,8,9,10) for supplying a gas into the reaction tubes. Each of the gas introducing nozzles (6,7,8,9) is structured so that at least the channel cross section of a portion facing the heater (5) is larger than those of the other portions.
摘要翻译： 公开了一种基板处理装置，其包括用于处理多个基板（27）的反应管（3,4），用于加热基板的加热器（5）和用于供应的气体引入喷嘴（6,7,8,9,10） 一个气体进入反应管。 每个气体引入喷嘴（6,7,8,9）被构造成使得至少面向加热器（5）的部分的通道横截面大于其它部分的通道横截面。
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2.发明授权Substrate processing apparatus and method of manufacturing semiconductor device 有权基板处理装置及半导体装置的制造方法公开(公告)号：US07883581B2
公开(公告)日：2011-02-08
申请号：US12421117
申请日：2009-04-09
申请人： Naoharu Nakaiso , Kiyohiko Maeda , Masayuki Yamada
发明人： Naoharu Nakaiso , Kiyohiko Maeda , Masayuki Yamada
CPC分类号： H01L21/3185 , C23C16/345 , C23C16/4412 , C23C16/45546 , C23C16/52
摘要： Provided are a substrate processing apparatus and a method of manufacturing a semiconductor device. The substrate processing apparatus includes a reaction vessel configured to process a substrate, a heater configured to heat an inside of the reaction vessel, a gas supply line configured to supply gas into the reaction vessel, a first valve installed at the gas supply line, a flow rate controller installed at the gas supply line, a main exhaust line configured to exhaust the inside of the reaction vessel, a second valve installed at the main exhaust line, a slow exhaust line installed at the main exhaust line, a third valve installed at the slow exhaust line, a throttle part installed at the slow exhaust line, a vacuum pump installed at the main exhaust line, and a controller configured to control the valves and the flow rate controller.
摘要翻译： 提供了一种基板处理装置和半导体装置的制造方法。 基板处理装置包括：配置成对基板进行处理的反应容器，构造成加热反应容器内部的加热器，将气体供给到反应容器内的气体供给管线，设置在气体供给管路上的第一阀， 安装在气体供给管路上的流量控制器，配置成排出反应容器内部的主排气管线，安装在主排气管路上的第二阀，安装在主排气管路上的慢排气管路，安装在主排气管路的第三阀门 慢排气管路，安装在慢排气管路处的节流部件，安装在主排气管线处的真空泵，以及控制器，其被配置为控制阀门和流量控制器。
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3.发明授权公开(公告)号：US07622007B2
公开(公告)日：2009-11-24
申请号：US10549933
申请日：2004-08-05
申请人： Naoharu Nakaiso
发明人： Naoharu Nakaiso
CPC分类号： H01L21/67109 , C23C16/455 , C23C16/45578
摘要： Disclosed is a substrate processing apparatus which comprises reaction tubes (3,4) for processing multiple substrates (27), a heater (5) for heating the substrates, and gas introducing nozzles (6,7,8,9,10) for supplying a gas into the reaction tubes. Each of the gas introducing nozzles (6,7,8,9) is structured so that at least the channel cross section of a portion facing the heater (5) is larger than those of the other portions.
摘要翻译： 公开了一种基板处理装置，其包括用于处理多个基板（27）的反应管（3,4），用于加热基板的加热器（5）和用于供应的气体引入喷嘴（6,7,8,9,10） 一个气体进入反应管。 每个气体引入喷嘴（6,7,8,9）被构造成使得至少面向加热器（5）的部分的通道横截面大于其它部分的通道横截面。
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4.发明申请公开(公告)号：US20070034158A1
公开(公告)日：2007-02-15
申请号：US10549933
申请日：2004-08-05
申请人： Naoharu Nakaiso
发明人： Naoharu Nakaiso
CPC分类号： H01L21/67109 , C23C16/455 , C23C16/45578
摘要： Disclosed is a substrate processing apparatus which comprises reaction tubes (3,4) for processing multiple substrates (27), a heater (5) for heating the substrates, and gas introducing nozzles (6,7,8,9,10) for supplying a gas into the reaction tubes. Each of the gas introducing nozzles (6,7,8,9) is structured so that at least the channel cross section of a portion facing the heater (5) is larger than those of the other portions.
摘要翻译： 公开了一种基板处理装置，其包括用于处理多个基板（27）的反应管（3,4），用于加热基板的加热器（5）和用于供应的气体引入喷嘴（6,7,8,9,10） 一个气体进入反应管。 每个气体引入喷嘴（6,7,8,9）被构造成使得至少面向加热器（5）的部分的通道横截面大于其它部分的通道横截面。
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