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    Thin-film magnetic head having electric lapping guide and method of making the same
    4.
    发明授权
    Thin-film magnetic head having electric lapping guide and method of making the same 有权
    具有电动研磨导轨的薄膜磁头及其制造方法

    公开(公告)号：US07933099B2

    公开(公告)日：2011-04-26

    申请号：US11783719

    申请日：2007-04-11

    申请人： Naoki Ohta ,  Tetsuya Kuwashima ,  Kazuki Sato ,  Kosuke Tanaka

    发明人： Naoki Ohta ,  Tetsuya Kuwashima ,  Kazuki Sato ,  Kosuke Tanaka

    IPC分类号： G11B5/33 ,  G11B5/39

    CPC分类号： G11B5/3166 ,  G11B5/3169 ,  G11B5/3173 ,  G11B5/3903

    摘要： A magnetic head having precisely controlled MR height has a slider substrate and a magnetic head part provided on the slider substrate. The magnetic head part includes, seeing from a medium-opposing surface side, a magnetism detecting element; an upper magnetic shield layer arranged on the magnetism detecting element; an electrode layer separated in a track width direction from the upper magnetic shield layer; and a conductor layer, arranged closer to the slider substrate than are the upper magnetic shield layer and electrode layer, extending in the track width direction so as to be in contact with the upper magnetic shield layer and electrode layer and forming a part of the medium-opposing surface.

    摘要翻译： 具有精确控制的MR高度的磁头具有滑块基板和设置在滑块基板上的磁头部。 磁头部分包括从介质相对表面侧观察磁性检测元件; 布置在磁检测元件上的上磁屏蔽层; 沿着磁道宽度方向从上磁屏蔽层分离的电极层; 以及布置在比上磁屏蔽层和电极层更靠近滑块基板的导体层，其在磁道宽度方向上延伸以与上磁屏蔽层和电极层接触并形成介质的一部分 表面。

    Thin-film magnetic head having electric lapping guide and method of making the same
    5.
    发明申请
    Thin-film magnetic head having electric lapping guide and method of making the same 有权
    具有电动研磨导轨的薄膜磁头及其制造方法

    公开(公告)号：US20080253033A1

    公开(公告)日：2008-10-16

    申请号：US11783719

    申请日：2007-04-11

    申请人： Naoki Ohta ,  Tetsuya Kuwashima ,  Kazuki Sato ,  Kosuke Tanaka

    发明人： Naoki Ohta ,  Tetsuya Kuwashima ,  Kazuki Sato ,  Kosuke Tanaka

    IPC分类号： G11B5/33

    CPC分类号： G11B5/3166 ,  G11B5/3169 ,  G11B5/3173 ,  G11B5/3903

    摘要： A magnetic head in which the size of MR height is controlled precisely, a head gimbal assembly and a hard disk drive which are mounted with such a magnetic head, and a method of making a magnetic head in which the size of MR height is controlled precisely.The magnetic head in accordance with the present invention is a magnetic head comprising a slider substrate and a magnetic head part provided on the slider substrate; wherein the magnetic head part comprises, seeing from a medium-opposing surface side, a magnetism detecting element; an upper magnetic shield layer arranged on the magnetism detecting element; an electrode layer separated in a track width direction from the upper magnetic shield layer; and a conductor layer, arranged closer to the slider substrate than are the upper magnetic shield layer and electrode layer, extending in the track width direction so as to be in contact with the upper magnetic shield layer and electrode layer and forming a part of the medium-opposing surface.

    摘要翻译： 高精度地控制MR高度的磁头，安装有这种磁头的磁头万向架组件和硬盘驱动器以及制造磁头的方法，其中MR高度的尺寸被精确地控制 。 根据本发明的磁头是包括滑块基板和设置在滑块基板上的磁头部分的磁头; 其中所述磁头部分包括从介质相对表面侧观察磁性检测元件; 布置在磁检测元件上的上磁屏蔽层; 沿着磁道宽度方向从上磁屏蔽层分离的电极层; 以及布置在比上磁屏蔽层和电极层更靠近滑块基板的导体层，其在磁道宽度方向上延伸以与上磁屏蔽层和电极层接触并形成介质的一部分 表面。

    Magneto-resistive device with reduced susceptibility to ion beam damage
    6.
    发明授权
    Magneto-resistive device with reduced susceptibility to ion beam damage 失效
    具有降低的离子束损伤敏感性的磁阻器件

    公开(公告)号：US07057859B2

    公开(公告)日：2006-06-06

    申请号：US10600444

    申请日：2003-06-23

    申请人： Takeo Kagami ,  Kazuki Sato ,  Takayasu Kanaya ,  Shunji Saruki ,  Tetsuya Kuwashima

    发明人： Takeo Kagami ,  Kazuki Sato ,  Takayasu Kanaya ,  Shunji Saruki ,  Tetsuya Kuwashima

    IPC分类号： G11B5/39

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3106 ,  G11B5/313 ,  G11B5/3133 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3967 ,  G11B2005/3996

    摘要： A magneto-resistive device is improved in characteristics by removing a surface oxide film to reduce the resistance and reducing an ion beam damage. The magneto-resistive device has a magneto-resistive layer which comprises a tunnel barrier layer, an underlying pinned layer, and an overlying free layer. A non-magnetic layer is formed on the free layer for protection. A composite-layer film comprised of an insulating layer and a damage reducing layer is formed in contact with an effective region which is effectively involved in detection of magnetism in the magneto-resistive layer without overlapping with the effective region. The damage reducing layer is made of a material which includes at least one element, the atomic weight of which is larger than that of silicon. The insulating layer and damage reducing layer do not constitute a magnetic domain control layer for applying a biasing magnetic field to the free layer.

    摘要翻译： 通过去除表面氧化膜以降低电阻并减少离子束损伤，改善了磁阻元件的特性。 磁阻装置具有磁阻层，其包括隧道阻挡层，下面的被钉扎层和上覆自由层。 在自由层上形成非磁性层以进行保护。 形成与绝缘层和损伤减少层组成的复合层膜与有效区域接触，该有效区域有效地涉及磁阻层中的磁性检测，而不与有效区域重叠。 损伤减少层由包括至少一种元素的材料制成，其原子量大于硅的原子量。 绝缘层和损伤降低层不构成用于向自由层施加偏置磁场的磁畴控制层。

    Magnetoresistive effect element having bias layer with internal stress controlled
    7.
    发明授权
    Magnetoresistive effect element having bias layer with internal stress controlled 有权
    具有内部应力控制的偏置层的磁阻效应元件

    公开(公告)号：US07672087B2

    公开(公告)日：2010-03-02

    申请号：US11691653

    申请日：2007-03-27

    申请人： Takayasu Kanaya ,  Katsuki Kurihara ,  Tetsuya Kuwashima

    发明人： Takayasu Kanaya ,  Katsuki Kurihara ,  Tetsuya Kuwashima

    IPC分类号： G11B5/39

    CPC分类号： G11B5/3967 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3932

    摘要： Provided is an MR effect element in which the magnetization of the pinned layer is stably fixed even after going through high temperature process. The MR effect element comprises: a non-magnetic intermediate layer; a pinned layer and a free layer stacked so as to sandwich the non-magnetic intermediate layer; an antiferromagnetic layer stacked to have a surface contact with the pinned layer, for fixing a magnetization of the pinned layer to a direction in-plane of the pinned layer and perpendicular to a track width direction; and hard bias layers provided on both sides in the track width direction of the free layer, for applying a bias field to the free layer, a product λS×σ of a saturation magnetostriction constant λS of the pinned layer and an internal stress σ on a cross-section perpendicular to a layer surface of the hard bias layer being negative.

    摘要翻译： 提供了一种MR效应元件，其中即使在经过高温处理之后，被钉扎层的磁化也被稳定地固定。 MR效应元件包括：非磁性中间层; 被钉扎层和层叠有非磁性中间层的自由层; 层叠以与被钉扎层表面接触的反铁磁层，用于将钉扎层的磁化固定到被钉扎层的平面内并垂直于轨道宽度方向; 以及设置在自由层的轨道宽度方向两侧的用于向自由层施加偏置场的硬偏压层，产品λS×＆sgr; 的钉扎层的饱和磁致伸缩常数λS和内部应力＆sgr; 在垂直于硬偏压层的层表面的横截面为负。

    Magnetoresistive Effect Element Having Bias Layer With Internal Stress Controlled
    8.
    发明申请
    Magnetoresistive Effect Element Having Bias Layer With Internal Stress Controlled 有权
    具有内部应力控制的偏置层的磁阻效应元件

    公开(公告)号：US20080239582A1

    公开(公告)日：2008-10-02

    申请号：US11691653

    申请日：2007-03-27

    申请人： Takayasu Kanaya ,  Katsuki Kurihara ,  Tetsuya Kuwashima

    发明人： Takayasu Kanaya ,  Katsuki Kurihara ,  Tetsuya Kuwashima

    IPC分类号： G11B5/33

    CPC分类号： G11B5/3967 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3932

    摘要： Provided is an MR effect element in which the magnetization of the pinned layer is stably fixed even after going through high temperature process. The MR effect element comprises: a non-magnetic intermediate layer; a pinned layer and a free layer stacked so as to sandwich the non-magnetic intermediate layer; an antiferromagnetic layer stacked to have a surface contact with the pinned layer, for fixing a magnetization of the pinned layer to a direction in-plane of the pinned layer and perpendicular to a track width direction; and hard bias layers provided on both sides in the track width direction of the free layer, for applying a bias field to the free layer, a product λS×σ of a saturation magnetostriction constant λS of the pinned layer and an internal stress σ on a cross-section perpendicular to a layer surface of the hard bias layer being negative.

    摘要翻译： 提供了一种MR效应元件，其中即使在经过高温处理之后，被钉扎层的磁化也被稳定地固定。 MR效应元件包括：非磁性中间层; 被钉扎层和层叠有非磁性中间层的自由层; 层叠以与被钉扎层表面接触的反铁磁层，用于将钉扎层的磁化固定到被钉扎层的平面内并垂直于轨道宽度方向; 以及在自由层的轨道宽度方向上设置在两侧的硬偏压层，用于向自由层施加偏置场，饱和磁致伸缩常数λS的乘积λS s 被钉扎层的垂直于硬偏置层的层表面的横截面上的内部应力σ是负的。

    Thin-film magnetic head, head gimbal assembly and hard disk system
    10.
    发明授权
    Thin-film magnetic head, head gimbal assembly and hard disk system 有权
    薄膜磁头，磁头万向架组件和硬盘系统

    公开(公告)号：US07436633B2

    公开(公告)日：2008-10-14

    申请号：US11205072

    申请日：2005-08-17

    申请人： Hiroshi Kiyono ,  Tetsuya Kuwashima ,  Takeo Kagami ,  Noriaki Kasahara ,  Naoki Ohta ,  Nozomu Hachisuka

    发明人： Hiroshi Kiyono ,  Tetsuya Kuwashima ,  Takeo Kagami ,  Noriaki Kasahara ,  Naoki Ohta ,  Nozomu Hachisuka

    IPC分类号： G11B5/245

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/1278 ,  G11B5/31 ,  G11B5/3912 ,  G11B5/3967 ,  G11B5/4826 ,  G11B2005/3996

    摘要： A parasitic capacity C4 generated between a slider substrate and the first shield layer with the first insulating layer as a capacity layer is made substantially equal to a parasitic capacity C2 occurring between a lower magnetic layer and the second shield layer with the third insulating layer as a capacity layer. Preferably, a connection is made between the lower magnetic layer and the slider substrate by a resistance of preferably 100 (Ω) or lower. Thus, it is possible to provide a thin-film magnetic head that can hold back deterioration in a reproducing device and the occurrence of errors due to crosstalk between a recording device and the reproducing device and extraneous noises.

    摘要翻译： 在第一绝缘层作为电容层的滑块基板与第一屏蔽层之间产生的寄生电容C 4大体上等于具有第三绝缘层的下磁层与第二屏蔽层之间的寄生电容C 2 作为容量层。 优选地，通过优选100（Ω）或更低的电阻在下磁性层和滑块基板之间形成连接。 因此，可以提供能够抑制再现装置中的劣化的薄膜磁头和由于记录装置与再现装置之间的串扰而引起的错误的发生以及无关的噪声。